2N2904(A) and 2N2905(A)

PNP SWITCHING SILICON Qualified Levels:

JAN, JANTX, JANTXV
Available on
commercial TRANSISTOR and JANS
versions Qualified per MIL-PRF-19500/290
DESCRIPTION
This family of 2N2904 and 2N2905A switching transistors are military qualified up to the JANS
level for high-reliability applications. These devices are also available in a TO-5 package.
Microsemi also offers numerous other transistor products to meet higher and lower power
ratings with various switching speed requirements in both through-hole and surface-mount
packages.

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES
• JEDEC registered 2N2904 through 2N2905A series.
TO-39 (TO-205AD)
• JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/290. Package
(See part nomenclature for all available options.)
• RoHS compliant versions available (commercial grade only).

Also available in:

TO-5 package
(long-leaded)
APPLICATIONS / BENEFITS 2N2904AL & 2N2905AL
• General purpose transistors for high speed switching applications.
• Military and other high-reliability applications.

MAXIMUM RATINGS

Value
Parameters / Test Conditions Symbol 2N2904 2N2904A Unit
2N2905 2N2905A
Collector-Emitter Voltage V CEO 40 60 V
Collector-Base Voltage V CBO 60 V
MSC – Lawrence
Emitter-Base Voltage V EBO 5.0 V 6 Lake Street,
Thermal Resistance Junction-to-Ambient R ӨJA 195
o
C/W Lawrence, MA 01841
o Tel: 1-800-446-1158 or
Thermal Resistance Junction-to-Case R ӨJC 50 C/W (978) 620-2600
Collector Current IC 600 mA Fax: (978) 689-0803
(1)
Total Power Dissipation @ T A = +25 °C 0.8
(2) PT W MSC – Ireland
@ T C = +25 °C 3.0 Gort Road Business Park,
TJ & Ennis, Co. Clare, Ireland
Operating & Storage Junction Temperature Range -65 to +200 °C Tel: +353 (0) 65 6840044
T stg
Fax: +353 (0) 65 6822298
Notes: 1. For derating, see figures 1 and 2.
Website:
2. For thermal impedance, see figures 3 and 4. www.microsemi.com

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MECHANICAL and PACKAGING

• CASE: Hermetically sealed, kovar base, nickel cap.
• TERMINALS: Leads are kovar, nickel plated, and finish is solder dip (Sn63/Pb37). Can be RoHS compliant with pure matte-tin
(commercial grade only).
• MARKING: Part number, date code, manufacturer’s ID.
• POLARITY: PNP (see package outline).
• WEIGHT: Approximately 1.064 grams.
• See Package Dimensions on last page.

PART NOMENCLATURE

JAN 2N2904 A (e3)

Reliability Level RoHS Compliance

JAN = JAN Level e3 = RoHS compliant (available
JANTX = JANTX Level on commercial grade only)
JANTXV = JANTXV Level Blank = non-RoHS compliant
JANS = JANS Level
Blank = Commercial Electrical Parameter Modifier

JEDEC type number

(see Electrical Characteristics
table)

SYMBOLS & DEFINITIONS

Symbol Definition
C obo Common-base open-circuit output capacitance.
I CEO Collector cutoff current, base open.
I CEX Collector cutoff current, circuit between base and emitter.
I EBO Emitter cutoff current, collector open.
h FE Common-emitter static forward current transfer ratio.
V CEO Collector-emitter voltage, base open.
V CBO Collector-emitter voltage, emitter open.
V EBO Emitter-base voltage, collector open.

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ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted

Parameters / Test Conditions Symbol Min. Max. Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I C = 10 mA 2N2904, 2N2905 V (BR)CEO 40 V
2N2904A, 2N2905A 60
Collector-Emitter Cutoff Voltage
V CE = 40 V 2N2904, 2N2905
I CES 1.0 µA
V CE = 60 V 2N2904A, 2N2905A
Collector-Base Cutoff Current
V CB = 60 V All Types I CBO1 10 µA

V CB = 50 V 2N2904, 2N2905 20 nA
I CBO2
2N2904A, 2N2905A 10 nA

V CB = 50 V @ T A = +150 ºC 2N2904, 2N2905 I CBO3 20 µA

2N2904A, 2N2905A 10 µA
Emitter-Base Cutoff Current
V EB = 3.5 V I EBO 50 nA
V EB = 5.0 V 10 µA

(1)
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I C = 0.1 mA, V CE = 10 V 2N2904 20
2N2905 35
2N2904A 40
2N2905A 75
I C = 1.0 mA, V CE = 10 V 2N2904 25 175
2N2905 50 450
2N2904A 40 175
2N2905A 100 450

I C = 10 mA, V CE = 10 V 2N2904 h FE 35
2N2905 75
2N2904A 40
2N2905A 100

I C = 150 mA, V CE = 10 V 2N2904, 2N2904A 40 120

2N2905, 2N2905A 100 300

I C = 500 mA, V CE = 10 V 2N2904 20

2N2905 30
2N2904A 40
2N2905A 50

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 2N2904(A) and 2N2905(A)

ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued)

Parameters / Test Conditions Symbol Min. Max. Unit

(1)
ON CHARACTERISTICS (continued)
Collector-Emitter Saturation Voltage
I C = 150 mA, I B = 15 mA V CE(sat) 0.4 V
I C = 500 mA, I B = 50 mA 1.6
Base-Emitter Saturation Voltage
I C = 150 mA, I B = 15 mA V BE(sat) 1.3 V
I C = 500 mA, I B = 50 mA 2.6

(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.

DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Small-Signal Short-Circuit Forward-Current
Transfer Ratio
I C = 1.0 mA, V CE = 10 2N2904 25
V, f = 1.0 kHz 2N2905 h fe 50
2N2904A, 2N2905A 40
Small-Signal Short-Circuit Forward-Current
Transfer Ratio
|h fe | 2.0
I C = 50 mA, V CE = 20 V,
f = 100 MHz
Output Capacitance
V CB = 10 V, I E = 0, C obo 8.0 pF
100 kHz ≤ f ≤ 1.0MHz
Iutput Capacitance
V EB = 2.0 V, I C = 0, C ibo 30 pF
100 kHz ≤ f ≤ 1.0MHz

SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
t
Turn-On Time on 45 ns
t
Turn-Off Time off 300 ns

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 2N2904(A) and 2N2905(A)

DC Operation Maximum Rating (W) GRAPHS

T a (°C) (Ambient)

FIGURE 1
Derating (R θJA ) PCB
DC Operation Maximum Rating (W)

Tc (ºC) (Case)

FIGURE 2
Derating (R θJA ) PCB

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 2N2904(A) and 2N2905(A)

GRAPHS (continued)
Theta ( C/W)
o

Time (s)

FIGURE 3
Thermal impedance graph (R θJA )
Theta ( C /W)
o

Time (s)

FIGURE 4
Thermal impedance graph (R θJA )

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 2N2904(A) and 2N2905(A)

PACKAGE DIMENSIONS

Dimensions
Symbol Inch Millimeters Note
Min Max Min Max
CD 0.305 0.335 7.75 8.51
CH 0.240 0.260 6.10 6.60
HD 0.335 0.370 8.51 9.40
LC 0.200 TP 5.08 TP 6
LD 0.016 0.021 0.41 0.53 7, 8
LL 0.500 0.750 12.70 19.05 7, 8, 12
LU 0.016 0.019 0.41 0.48 7, 8
L1 0.050 1.27 7, 8
L2 0.250 6.35 7, 8
P 0.100 2.54
Q 0.050 1.27 5
TL 0.029 0.045 0.74 1.14 4
TW 0.028 0.034 0.71 0.86 3
r 0.010 0.25 10
α 45° TP 45° TP 6

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
12. For “L” suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (44.45 mm) maximum.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

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