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STD9NM60N, STF9NM60N, STP9NM60N

Datasheet

N-channel 600 V, 0.63 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in


DPAK, TO-220FP and TO-220 packages

TAB
Features
3
2
1
DPAK
Order code VDS RDS(on) max. ID Package
TAB
STD9NM60N DPAK
STF9NM60N 600 V 0.745 Ω 6.5 A TO-220FP
3
3 2
2 1
TO-220 1 TO-220FP STP9NM60N TO-220

• 100% avalanche tested


D(2, TAB)
• Low input capacitance and gate charge
• Low gate input resistance

G(1) Applications
• Switching applications

S(3)
AM01475v1_noZen
Description
These devices are N-channel Power MOSFETs developed using the second
generation of MDmesh™ technology. These revolutionary Power MOSFETs
associate a vertical structure to the company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. They are therefore suitable for the most
demanding high-efficiency converters.

Product status link

STD9NM60N
STF9NM60N
STP9NM60N

DS6986 - Rev 2 - September 2018 www.st.com


For further information contact your local STMicroelectronics sales office.
STD9NM60N, STF9NM60N, STP9NM60N
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Value
Symbol Parameter Unit
DPAK, TO-220 TO-220FP

VDS Drain-source voltage 600 V

VGS Gate-source voltage ±25 V

ID Drain current (continuous) at TC = 25 °C 6.5 6.5 (1) A

ID Drain current (continuous) at TC = 100 °C 4 4 (1) A

IDM (2) (1)


Drain current (pulsed) 26 26 A

PTOT Total dissipation at TC = 25 °C 70 25 W

dv/dt (3) Peak diode recovery voltage slope 15 V/ns

Insulation withstand voltage (RMS) from all three


VISO 2.5 kV
leads to external heat sink (t = 1 s; Tc = 25 °C)

Tj Operating junction temperature range


-55 to 150 °C
Tstg Storage temperature range

1. Limited by maximum junction temperature.


2. Pulse width limited by safe operating area.
3. ISD ≤ 6.5 A, di/dt ≤ 400 A/μs,, VDD = 80% V(BR)DSS.

Table 2. Thermal data

Value
Symbol Parameter Unit
DPAK TO-220 TO-220FP

Rthj-case Thermal resistance junction-case 1.79 5

Rthj-amb Thermal resistance junction-ambient 62.5 °C/W

Rthj-pcb (1) Thermal resistance junction-pcb 50

1. When mounted on 1inch² FR-4, 2 Oz copper board.

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 2.5 A

EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 115 mJ

DS6986 - Rev 2 page 2/24


STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 1 mA, VGS = 0 V 600 V
voltage
VGS = 0 V, VDS = 600 V 1 µA
Zero gate voltage drain
IDSS
current VGS = 0 V, VDS = 600 V, TC = 125 °C (1)
100 µA

Gate body leakage


IGSS VDS = 0 V, VGS = ±20 V 100 nA
current
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V

Static drain-source on
RDS(on) VGS = 10 V, ID = 3.25 A 0.63 0.745 Ω
resistance

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance 452

Coss Output capacitance 30


VDS = 50 V, f = 1 MHz, VGS = 0 V - - pF
Reverse transfer
Crss 1.45
capacitance
Equivalent output
Coss eq. (1) VDS = 0 to 480 V, VGS = 0 V - 79 - pF
capacitance
Rg Gate input resistance f = 1 MHz, ID = 0 A - 4.8 - Ω

Qg Total gate charge 17.4


VDD = 480 V, ID = 6.5 A, VGS = 0 to 10 V
Qgs Gate-source charge (see Figure 17. Test circuit for gate charge - 3 - nC
behavior)
Qgd Gate-drain charge 9.7

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 480 V, ID = 6.5 A, 28

tr Rise time RG = 4.7 Ω, VGS = 10 V 23


- - ns
td(off) Turn-off delay time (see Figure 16. Test circuit for resistive load 52.5
switching times and Figure 21. Switching
tf Fall time time waveform) 26.7

DS6986 - Rev 2 page 3/24


STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current 6.5

Source-drain current - A
ISDM (1) 26
(pulsed)

VSD (2) Forward on voltage ISD = 6.5 A, VGS = 0 V - 1.6 V

trr Reverse recovery time ISD = 6.5 A, di/dt = 100 A/µs 264 ns

Qrr Reverse recovery charge VDD = 60 V (see Figure 18. Test circuit for - 1.9 μC
inductive load switching and diode recovery
IRRM Reverse recovery current times) 14.6 A

trr Reverse recovery time ISD = 6.5 A, di/dt = 100 A/µs 324 ns

Qrr Reverse recovery charge VDD = 60 V (see Figure 18. Test circuit for - 2.3 μC
inductive load switching and diode recovery
IRRM Reverse recovery current times) 14.2 A

1. Pulse width limited by safe operating area.


2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

DS6986 - Rev 2 page 4/24


STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics curves

2.1 Electrical characteristics curves

Figure 1. Safe operating area for DPAK Figure 2. Thermal impedance for DPAK
GC20460
K

100

10-1
10-1

10-2 10-2
10-1 102 10-5 10-4 10-3 10-2 10-1 tp (s)

Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
K GC20940

10 -1

10 -2
10-1

10-2 10 -3
10-1 102 10 -4 10 -3 10 -2 10 -1 10 0 t p (s)

Figure 5. Safe operating area for TO-220 Figure 6. Thermal impedance for TO-220
AM08162v1
ID
(A)
is

10µs
R re a
)
on
ax a
S(
m th is

100µs
D
by n
d ni
ite io
m at

1ms
Li p e r
O

10ms
Tj=150°C
10-1 Tc=25°C
S ingle puls e

10-2
10-1 102 DS (V)

DS6986 - Rev 2 page 5/24


STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics curves

Figure 7. Output characterisics Figure 8. Transfer characteristics


AM08165v1 AM08166v1
ID ID
(A) VGS =10V (A)
VDS =20V
12 12

10 10
6V
8 8

6 6

4 4
5V
2 2

0 0
0 5 10 15 20 25 30 VDS (V) 0 2 4 6 8 10 VGS (V)

Figure 9. Gate charge vs gate-source voltage Figure 10. Static drain-source on resistance
AM08167v1 AM08168v1
VGS VDS R DS (on)
(Ω)
VDS VDD=480V
12 0.66 VGS =10V
ID=6.5A 500
0.65
10
400
0.64
8
300 0.63
6
0.62
200
4 0.61
100
2 0.60

0 0 0.59
0 5 10 15 Qg 0 1 2 3 4 5 6 ID(A)

Figure 11. Capacitance variations Figure 12. Output capacitance stored energy
AM08169v1
C Eoss AM08170v1
(pF) (µJ)
3.5

1000 3
Cis s ID=250μA
2.5

100 2

1.5
Cos s
10 1

0.5
Crs s 0
1
0.1 1 10 100 VDS (V) 0 100 200 300 400 500 600 VDS(V)

DS6986 - Rev 2 page 6/24


STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics curves

Figure 13. Normalized gate threshold voltage vs


Figure 14. Normalized on resistance vs temperature
temperature
AM08172v1
AM08171v1 R DS (on)
VGS (th) (norm)
(norm)
2.1
1.10
1.9
ID=250µA ID=3.25A
1.7
1.00
1.5
3
0.90

0.9
0.80

0.5
0.70 -50 0 TJ (°C)
-50 -25 0 25 50 75 100 TJ (°C)

Figure 15. Normalized V(BR)DSS vs temperature


AM08173v1
V(BR)DSS
(norm)

ID=1mA
1.03

1.01

0.99

0.97

0.95

0.93
-50 -25 0 25 50 75 100 TJ (°C)

DS6986 - Rev 2 page 7/24


STD9NM60N, STF9NM60N, STP9NM60N
Test circuits

3 Test circuits

Figure 16. Test circuit for resistive load switching times Figure 17. Test circuit for gate charge behavior

VDD

12 V 47 kΩ
1 kΩ
100 nF
RL
2200 3.3
+ μF μF VDD
VD IG= CONST
VGS 100 Ω D.U.T.

VGS
RG D.U.T. pulse width +
2.7 kΩ
2200 VG
pulse width μF
47 kΩ

1 kΩ

AM01468v1 AM01469v1

Figure 18. Test circuit for inductive load switching and


Figure 19. Unclamped inductive load test circuit
diode recovery times

A A A L
D VD
fast 100 µH
G D.U.T. diode 2200 3.3
S B 3.3 1000 + µF µF VDD
B B
25 Ω D
µF + µF VDD ID
G D.U.T.
+ RG S
Vi D.U.T.
_
pulse width

AM01471v1
AM01470v1

Figure 21. Switching time waveform


Figure 20. Unclamped inductive waveform
ton toff
V(BR)DSS
td(on) tr td(off) tf
VD

90% 90%
IDM

10% VDS 10%


ID 0

VDD VDD VGS 90%

0 10%
AM01472v1
AM01473v1

DS6986 - Rev 2 page 8/24


STD9NM60N, STF9NM60N, STP9NM60N
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.

DS6986 - Rev 2 page 9/24


STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) type A package information

4.1 DPAK (TO-252) type A package information

Figure 22. DPAK (TO-252) type A package outline

0068772_A_25

DS6986 - Rev 2 page 10/24


STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) type A package information

Table 8. DPAK (TO-252) type A mechanical data

mm
Dim.
Min. Typ. Max.

A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 4.95 5.10 5.25
E 6.40 6.60
E1 4.60 4.70 4.80
e 2.159 2.286 2.413
e1 4.445 4.572 4.699
H 9.35 10.10
L 1.00 1.50
(L1) 2.60 2.80 3.00
L2 0.65 0.80 0.95
L4 0.60 1.00
R 0.20
V2 0° 8°

DS6986 - Rev 2 page 11/24


STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) type C2 package information

4.2 DPAK (TO-252) type C2 package information

Figure 23. DPAK (TO-252) type C2 package outline

0068772_C2_25

DS6986 - Rev 2 page 12/24


STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) type C2 package information

Table 9. DPAK (TO-252) type C2 mechanical data

mm
Dim.
Min. Typ. Max.

A 2.20 2.30 2.38


A1 0.90 1.01 1.10
A2 0.00 0.10
b 0.72 0.85
b4 5.13 5.33 5.46
c 0.47 0.60
c2 0.47 0.60
D 6.00 6.10 6.20
D1 5.10 5.60
E 6.50 6.60 6.70
E1 5.20 5.50
e 2.186 2.286 2.386
H 9.80 10.10 10.40
L 1.40 1.50 1.70
L1 2.90 REF
L2 0.90 1.25
L3 0.51 BSC
L4 0.60 0.80 1.00
L6 1.80 BSC
θ1 5° 7° 9°
θ2 5° 7° 9°
V2 0° 8°

DS6986 - Rev 2 page 13/24


STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) type C2 package information

Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm)

FP_0068772_25

DS6986 - Rev 2 page 14/24


STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) packing information

4.3 DPAK (TO-252) packing information

Figure 25. DPAK (TO-252) tape outline

10 pitches cumulative
tolerance on tape +/- 0.2 mm

Top cover P0 D P2
T tape
E

F
K0 W
B1 B0

For machine ref. only A0 P1 D1


including draft and
radii concentric around B0
User direction of feed

Bending radius
User direction of feed

AM08852v1

DS6986 - Rev 2 page 15/24


STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) packing information

Figure 26. DPAK (TO-252) reel outline

40mm min.
access hole
at slot location
B

D C

N
A

Tape slot G measured


in core for at hub
Full radius tape start
2.5mm min.width

AM06038v1

Table 10. DPAK (TO-252) tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R 40
T 0.25 0.35
W 15.7 16.3

DS6986 - Rev 2 page 16/24


STD9NM60N, STF9NM60N, STP9NM60N
TO-220FP package information

4.4 TO-220FP package information

Figure 27. TO-220FP package outline

7012510_Rev_12_B

DS6986 - Rev 2 page 17/24


STD9NM60N, STF9NM60N, STP9NM60N
TO-220FP package information

Table 11. TO-220FP package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2

DS6986 - Rev 2 page 18/24


STD9NM60N, STF9NM60N, STP9NM60N
TO-220 type A package information

4.5 TO-220 type A package information

Figure 28. TO-220 type A package outline

0015988_typeA_Rev_21

DS6986 - Rev 2 page 19/24


STD9NM60N, STF9NM60N, STP9NM60N
TO-220 type A package information

Table 12. TO-220 type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95

DS6986 - Rev 2 page 20/24


STD9NM60N, STF9NM60N, STP9NM60N
Ordering information

5 Ordering information

Table 13. Order codes

Order code Marking Package Packing

STD9NM60N DPAK Tape and reel


STF9NM60N 9NM60N TO-220FP
Tube
STP9NM60N TO-220

DS6986 - Rev 2 page 21/24


STD9NM60N, STF9NM60N, STP9NM60N

Revision history

Table 14. Document revision history

Date Version Changes

20-Oct-2010 1 First release.


Removed maturity status indication from cover page. The document status is
production data.
25-Sep-2018 2
Updated Section 4 Package information.
Minor text changes.

DS6986 - Rev 2 page 22/24


STD9NM60N, STF9NM60N, STP9NM60N
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2 DPAK (TO-252) type C2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.4 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.5 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21


Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

DS6986 - Rev 2 page 23/24


STD9NM60N, STF9NM60N, STP9NM60N

IMPORTANT NOTICE – PLEASE READ CAREFULLY


STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved

DS6986 - Rev 2 page 24/24


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