Solid States Final Test

University of Technology Jamaica
Faculty: Faculty of Education and Liberal Studies
Program: Industrial Technology (Electrical)
Academic Year 2021-2022
Semester: 1
Module: Solid State Electronics 2
Date of Submission: December 15, 2021
Students: Rickel Rowe
ID# 1807234
Lecturer: Mr. Everton Lewis
Final Test
QUESTION 1
1. With the aid of a neat sketch, and starting with pure Silicon semiconductor material,
describe the basic construction of an NPN bipolar junction transistor. Identify the
transistor terminals, as well as the types of majority and minority carriers in each layer.
2. With the aid of a simple sketch, show how the transistor junctions of a common- base (C-
B) configuration must be biased if the component is to be used as an amplifier.
a. Contrast the Common-Base (C-B) and Common-Emitter (C-E) transistor amplifier
configurations with regards to:
Power gain, AP.

Voltage gain, AV.
Output impedance, ZO.
Phase inversion, ϴ.
Common Base Configuration Common Emitter Configuration

Power Gain Yes Power Gain Yes
Voltage Gain Yes Voltage Gain Yes
Output Impedance High Output Impedance Low
Phase Inversion No Phase Inversion Yes
QUESTION 2
1. Sketch and label a block-diagram of the four major sections of a variable dc power
supply.
2. State the function of each block identified in part i) above.
Transformer: The purpose of the transformer is to convert the 230 V (or 115 V) mains voltage
that are normally provided by our main energy supplier (JPS) to one which is suitable for further
processing to a generally much lower voltage d.c. supply
Rectifier Circuit: A rectifier is an electrical device that converts alternating current (AC), which
periodically reverses direction, to direct current (DC), which flows in only one direction
Filter Circuit: Capacitive filter smooths additional pulses in the output stage so that an almost
constant DC voltage is supplied to the load
Voltage Regulator Circuit: The purpose of a voltage regulator is to keep the voltage in a circuit
relatively close to a desired value
3. Identify the major electrical/electronic component(s) in each block in part i) above.
Transformer- Step down Transformer

Rectifier Circuit- Diodes
Filter Circuit – Capacitors
Voltage Regulator Circuit – Transistor
4. On your block diagram in part i) above, trace the voltage waveform signal as it travels
through each block of the power supply, from its 110 Vac input to its dc output (assume
that Vout = 24 Vdc).
`QUESTION 3
a. With the aid of simple sketches, contrast the operation of Class A, AB, B, and C power
amplifiers with regards to their:
Efficiency.
Conduction angle.
Distortion levels.
b. Using a hypothetical dc load-line for a small-signal voltage amplifier, show why
the Q-point of the amplifier should be biased for operation in the active region and not
the cut-off or saturation regions, if an undistorted output voltage waveform is desired.
QUESTION 4
a i) Identify the two major categories of field-effect transistors (FETs).
Junction Field Effect Transistor

Insulated Gate Field Effect Transistor
ii) List six (6) important differences between FETs when compared to BJTs.
1. BJT stands for bipolar junction transistor, so it is a bipolar component

FET stands for the field-effect transistor, so it is a uni-junction transistor
2. BJT has three terminals like base, emitter, and collector

FET has three terminals like Drain, Source, and Gate
3. The operation of BJT mainly depends on both the charge carriers like majority as well as minority
The operation of FET mainly depends on the majority charge carriers either holes or electrons
4 .The input impedance of this BJT ranges from 1K to 3K, so it is very less
The input impedance of FET is very large
5v.BJT is the current controlled device

FET is the voltage-controlled device
6. As compared with the emitter terminal, both the terminals of BJT like base and
collector are more positive while the FET Its Drain terminal is positive and the gate terminal is negative
as compared with the source.
iii. Using the approximate method for evaluating Shockley’s Equation, sketch the transfer characteristics
curve for a JFET component defined by, IDss = 20 mA and Vp = -12 V.

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University of Technology Jamaica

Faculty: Faculty of Education and Liberal Studies

Program: Industrial Technology (Electrical)

Academic Year 2021-2022

Module: Solid State Electronics 2

Date of Submission: December 15, 2021

Students: Rickel Rowe

Lecturer: Mr. Everton Lewis

Power gain, AP.

Common Base Configuration Common Emitter Configuration

3. Identify the major electrical/electronic component(s) in each block in part i) above.

Transformer- Step down Transformer

a i) Identify the two major categories of field-effect transistors (FETs).

Junction Field Effect Transistor

1. BJT stands for bipolar junction transistor, so it is a bipolar component

2. BJT has three terminals like base, emitter, and collector

5v.BJT is the current controlled device

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