NTMFS4935N

Power MOSFET
30 V, 93 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses http://onsemi.com
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant V(BR)DSS RDS(ON) MAX ID MAX
Applications
3.2 mW @ 10 V
• CPU Power Delivery, DC−DC Converters 30 V 93 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) 4.2 mW @ 4.5 V

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 30 V D (5,6)
Gate−to−Source Voltage VGS ±20 V
Continuous Drain TA = 25°C ID 21.8 A
Current RqJA
(Note 1) TA = 100°C 13.8
G (4)
Power Dissipation TA = 25°C PD 2.63 W
RqJA (Note 1)
Continuous Drain TA = 25°C ID 40 A S (1,2,3)
Current RqJA ≤
10 s (Note 1) TA = 100°C 25 N−CHANNEL MOSFET

Power Dissipation TA = 25°C PD 8.7 W

RqJA ≤ 10 s MARKING
(Note 1) Steady
State DIAGRAM
Continuous Drain TA = 25°C ID 13 A
Current RqJA D
(Note 2) TA = 100°C 8.2 1 S D
S 4935N
Power Dissipation TA = 25°C PD 0.93 W SO−8 FLAT LEAD
S AYWWG
RqJA (Note 2) CASE 488AA
G G D
Continuous Drain TC = 25°C ID 93 A STYLE 1
Current RqJC D
(Note 1) TC = 85°C 59
Power Dissipation TC = 25°C PD 48 W A = Assembly Location
RqJC (Note 1) Y = Year
WW = Work Week
Pulsed Drain TA = 25°C, tp = 10 ms IDM 275 A
G = Pb−Free Package
Current
(Note: Microdot may be in either location)
Current Limited by Package TA = 25°C IDmax 100 A
Operating Junction and Storage TJ, −55 to °C
Temperature TSTG +150 ORDERING INFORMATION
Source Current (Body Diode) IS 44 A
Device Package Shipping†
Drain to Source DV/DT dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche EAS 110 mJ NTMFS4935NT1G SO−8 FL 1500 /
Energy TJ = 25°C, VDD = 24 V, VGS = 10 V, (Pb−Free) Tape & Reel
IL = 47 Apk, L = 0.1 mH, RG = 25 W
NTMFS4935NT3G SO−8 FL 5000 /
Lead Temperature for Soldering Purposes TL 260 °C (Pb−Free) Tape & Reel
(1/8″ from case for 10 s)
†For information on tape and reel specifications,
Stresses exceeding Maximum Ratings may damage the device. Maximum including part orientation and tape sizes, please
Ratings are stress ratings only. Functional operation above the Recommended refer to our Tape and Reel Packaging Specifications
Operating Conditions is not implied. Extended exposure to stresses above the Brochure, BRD8011/D.
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.

© Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:

September, 2010 − Rev. 6 NTMFS4935N/D
 NTMFS4935N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 2.6
Junction−to−Ambient – Steady State (Note 3) RqJA 47.5
°C/W
Junction−to−Ambient – Steady State (Note 4) RqJA 134.8
Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 14.4
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V
Drain−to−Source Breakdown Voltage V(BR)DSS/ 15
mV/°C
Temperature Coefficient TJ
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 1.0
VDS = 24 V mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.2 1.63 2.2 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ 4.0 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 2.7 3.2
ID = 15 A 2.7
mW
VGS = 4.5 V ID = 30 A 3.7 4.2
ID = 15 A 3.7
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 32 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS 3579 4850
Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = 15 V 1264 1710 pF
Reverse Transfer Capacitance CRSS 39 59
Total Gate Charge QG(TOT) 22
Threshold Gate Charge QG(TH) 5.6
VGS = 4.5 V, VDS = 15 V; ID = 30 A nC
Gate−to−Source Charge QGS 10.2
Gate−to−Drain Charge QGD 3.0
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 49.4 nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time td(ON) 16.3
Rise Time tr VGS = 4.5 V, VDS = 15 V, 20
ns
Turn−Off Delay Time td(OFF) ID = 15 A, RG = 3.0 W 27.5
Fall Time tf 6.6
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.

http://onsemi.com
2
 NTMFS4935N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time td(ON) 11.2
Rise Time tr VGS = 10 V, VDS = 15 V, 18.7
ns
Turn−Off Delay Time td(OFF) ID = 15 A, RG = 3.0 W 28.3
Fall Time tf 12.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.85 1.1
V
IS = 30 A TJ = 125°C 0.72
Reverse Recovery Time tRR 44.4
Charge Time ta VGS = 0 V, dIS/dt = 100 A/ms, 21.6 ns
Discharge Time tb IS = 30 A 22.8
Reverse Recovery Charge QRR 45 nC
PACKAGE PARASITIC VALUES
Source Inductance LS 0.65 nH
Drain Inductance LD 0.005 nH
TA = 25°C
Gate Inductance LG 1.84 nH
Gate Resistance RG 1.1 2.0 W
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.

http://onsemi.com
3
 NTMFS4935N

TYPICAL CHARACTERISTICS

180 160
10 V 4.2 V
160 VGS = 4.0 V TJ = 25°C
140 VDS = 10 V
7V
140 3.8 V
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

4.5 120
3.6 V
120
100
100 3.4 V
80
80 3.2 V TJ = 25°C
60
60
3.0 V
40 40
2.8 V TJ = 125°C
20 2.4 V 20
2.6 V
TJ = −55°C
0 0
0 1 2 3 4 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.014 0.0050
0.013 ID = 30 A 0.0048 TJ = 25°C
TJ = 25°C 0.0046
0.012
0.0044
0.011 0.0042 VGS = 4.5 V
0.010 0.0040
0.009 0.0038
0.0036
0.008
0.0034
0.007 0.0032
0.006 0.0030
VGS = 10 V
0.005 0.0028
0.004 0.0026
0.0024
0.003 0.0022
0.002 0.0020
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 20 40 60 80 100 120 140 160
VGS (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.9 10,000
1.8 ID = 30 A VGS = 0 V
RDS(on), DRAIN−TO−SOURCE RES-

1.7 VGS = 10 V TJ = 150°C

1.6
ISTANCE (NORMALIZED)

IDSS, LEAKAGE (nA)

1.5
1.4 1000 TJ = 125°C
1.3
1.2
1.1 TJ = 85°C
1.0 100
0.9
0.8
0.7
0.6
0.5 10
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage

http://onsemi.com
4
 NTMFS4935N

TYPICAL CHARACTERISTICS

4500 11

VGS, GATE−TO−SOURCE VOLTAGE (V)

VGS = 0 V 10 QT
4000 TJ = 25°C
Ciss 9
3500
C, CAPACITANCE (pF)

8
3000 7
2500 6
2000 5
Qgd
Coss 4
1500 Qgs TJ = 25°C
3
1000 VDD = 15 V
2 VGS = 10 V
500 1 ID = 30 A
Crss
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 45 50
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge

1000 30
VDD = 15 V
td(off)
ID = 15 A 25 VGS = 0 V
IS, SOURCE CURRENT (A)

VGS = 10 V
100 tf 20
t, TIME (ns)

TJ = 125°C
tr
15
td(on)

10 10
TJ = 25°C
5

1 0
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance

1000 130
SOURCE AVALANCHE ENERGY (mJ)

120 ID = 29 A
EAS, SINGLE PULSE DRAIN−TO−

110
100
ID, DRAIN CURRENT (A)

10 ms 100
90
100 ms 80
10
1 ms 70
10 ms 60
1 0 ≤ VGS ≤ 20 V
50
Single Pulse
TC = 25°C 40
0.1 30
RDS(on) Limit
Thermal Limit 20
dc 10
Package Limit
0.01 0
0.01 0.1 1 10 100 25 50 75 100 125 150
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.
Safe Operating Area Starting Junction Temperature

http://onsemi.com
5
 NTMFS4935N

TYPICAL CHARACTERISTICS

1000

100 Duty Cycle = 50%

20%
10%
R(t) (°C/W)

10 5%
2%

1 1%

0.1

Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
Figure 13. Thermal Response

70

60

50

40
GFS (S)

30

20

10

0
0 10 20 30 40 50 60 70 80 90 100
ID (A)
Figure 14. GFS vs. ID

http://onsemi.com
6
 NTMFS4935N

PACKAGE DIMENSIONS

DFN5 5x6, 1.27P

(SO−8FL)
CASE 488AA−01
2X ISSUE D NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B BURRS.
2X
D1 MILLIMETERS
0.20 C DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00 −−− 0.05
4X b 0.33 0.41 0.51
E1 q c 0.23 0.28 0.33
E D 5.15 BSC
2 D1 4.50 4.90 5.10
c D2 3.50 −−− 4.22
A1 E 6.15 BSC
E1 5.50 5.80 6.10
1 2 3 4 E2 3.45 −−− 4.30
e 1.27 BSC
TOP VIEW G 0.51 0.61 0.71
3X C K 0.51 −−− −−−
L 0.51 0.61 0.71
e SEATING
L1 0.05 0.17 0.20
0.10 C PLANE
M 3.00 3.40 3.80
A DETAIL A q 0_ −−− 12 _

0.10 C STYLE 1:
PIN 1. SOURCE
SIDE VIEW 2. SOURCE
DETAIL A SOLDERING FOOTPRINT* 3. SOURCE
4. GATE
3X 4X 5. DRAIN
8X b 1.270 0.750
4X
0.10 C A B
1.000
0.05 c L e/2
1 4
0.965
K
1.330 2X
0.905
E2 2X
PIN 5 M 0.495
(EXPOSED PAD) L1 4.530
3.200
0.475

G D2
2X
BOTTOM VIEW
1.530
4.560

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: [email protected] Phone: 81−3−5773−3850 Sales Representative

http://onsemi.com NTMFS4935N/D
7