NATIONAL UNIVERSITY OF SINGAPORE

EXAMINATION FOR

(Semester I: 2017/2018)

EE5508 – Semiconductor Fundamentals

November 2017 - Time Allowed: 2 Hours

INSTRUCTIONS TO CANDIDATES:

1. This paper contains FOUR (4) questions and comprises TEN (10) printed pages.

2. Answer all FOUR (4) questions. Start each question on a new page. All questions
carry equal marks.

3. This is a CLOSED BOOK examination.

4. Fundamental constants are given in Appendix A.

5. A list of equations is given in Appendix B for your reference.

6. Calculators can be used in the examination.

7. Programmable calculators are not allowed.

8. The total marks for this exam is 100 marks.

 EE5508 – Semiconductor Fundamentals/ Page 2

Q.1 (a) Consider a one-dimensional crystal consisting of identical atoms separated by an equal
distance a, with each atom contributing slightly less than two movable electrons to the
crystal.

(i) Draw the Brillouin zone for this crystal.

(4 marks)

(ii) Is the crystal in Q1(a) an insulator or a metal at low temperature? Explain.

(8 marks)

(b) Suppose the electron energy in a one-dimensional crystal is given by

ℏ2 5 1
𝐸𝐸(𝑘𝑘) = 𝑚𝑚𝑎𝑎2 �6 − 𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐 + 6 𝑐𝑐𝑐𝑐𝑐𝑐2𝑘𝑘𝑘𝑘�

where a is the lattice constant. Calculate:

(i) The width (∆E) of the energy band, i.e., the difference between the top and bottom
of the energy band.
(5 marks)
(ii) The velocity of the electrons as a function of wave vector k.
(4 marks)

(iii) The effective masses of the electrons at the bottom and top of the energy band,
respectively.
(4 marks)

Q.2 (a) Suppose we have a silicon film doped with both arsenic and boron at a concentration
of 1015 cm-3 and 1017 cm-3, respectively. The ionization energies of both types of
dopants are approximately 45 meV.

(i) Calculate the electron and hole concentrations at room temperature (300K). You
may assume that all the dopants are ionized and that ni = 6.73 × 109 cm-3 for silicon
at room temperature.
(5 marks)

(ii) Calculate the Fermi level and indicate it in the energy band diagram (you
may use a bandgap of 1.12 eV for Si).
(5 marks)

(iii) What is the resistivity of the sample if the electron mobility and hole
mobility are 1000 cm2/Vs and 400 cm2/Vs, respectively.
(5 marks)

Q.2 is continued on Page 3

 EE5508 – Semiconductor Fundamentals/ Page 3

(iv) Find the temperature dependence of electron (n) and hole (p) concentrations
in the temperature range of 500 – 1000 K (i.e., express n and p as a function
of temperature). You may assume that the bandgap and effective density of
states in both the conduction and valence bands are independent of
temperature, and are given by 𝐸𝐸𝑔𝑔 = 1.12 𝑒𝑒𝑒𝑒, 𝑁𝑁𝐶𝐶 = 2.8 × 1019 𝑐𝑐𝑐𝑐−3 and
𝑁𝑁𝑉𝑉 = 1.04 × 1019 𝑐𝑐𝑐𝑐−3, respectively.
(5 marks)

𝑥𝑥
(b) In a silicon sample in equilibrium, the net doping is 𝑁𝑁𝑑𝑑 (𝑥𝑥) = 1017 exp �100� cm-3 (x
is in unit of nm). Assuming charge neutrality, what is the electric field at x =0?

(5 marks)

Q.3 (a) InAsxSb1-x ternary alloy is grown to be latticed matched to GaSb. Using Vegard’s law,
determine the composition x. The lattice constants of InAs, GaSb and InSb are 6.06 Å,
6.10 Å and 6.48 Å, respectively.
(2 marks)

(b) Given the band gap energy of InAsxSb1-x has a quadratic dependence as
a function of x:
E g (x ) = −0.73 x 2 + 0.807 x + 0.283 (1)
where 0 ≤ x ≤ 1 .

(i) Obtain the band gap energies of InAs and InSb, and the bowing parameter b from
eq.(1). (3 marks)

(ii) Provide a reason for the bowing effect of the band gap energy.
(2 marks)

(iii) Calculate the wavelength (in nm) of the band-to-band emission given by eq. (1)
which x is determined in part Q1(a).
(3 marks)

(c) The band gap energies of InAsGaSb and GaSb are 0.492 eV and 0.727 eV,
respectively. Given that the valence band (VB) offset between InAsGaSb and GaSb is
0.12 eV and the top of the VB of GaSb is higher than that of InAsGaSb,

(i) Sketch a schematic diagram to show the band alignment of InAsGaSb and GaSb.
Label clearly the CB and VB offsets and the band gap energies of InAsGaSb and
GaSb.
(ii) Find the conduction band (CB) offset of InAsGaSb/GaSb heterostructure.
(iii) State the type of band alignment for InAsGaSb/GaSb heterostructure.
(7 marks)

(d) The quantum well infrared photodetector (QWIP) was designed to detect mid
wavelength and long-wavelength infrared radiation. Sketch the band diagrams to show
the optical transition in (i) bound to bound QWIP, (ii) bound to continuum and (iii)
bound to quasi-bound QWIPs.
(8 marks)
 EE5508 – Semiconductor Fundamentals/ Page 4

Q.4 (a) With the aid of a schematic diagram, state four different types of optical transition
processes in a bulk semiconductor.
(8 marks)
(b) State the difference between Wannier-Mott exciton and Frenkel exction in terms of
the size of their radii as compared to the size of the unit cell.
(2 marks)
(c) Zinc Selenide (ZnSe) is a direct bandgap semiconductor.
(i) Calculate the binding energy and Bohr radius of the n =1 and n = 2 free excitons
in ZnSe.
(4 marks)
(ii) Provide a reason whether you expect these excitons to behave like Wannier-Mott
exciton or Frenkel exciton ?
(2 marks)
(iii) Provide a reason whether you expect these excitons to be stable at room
temperature?
(2 marks)
(iv) Calculate the optical transition energies for the n = 1 and n = 2 free exciton.

(2 marks)
Table Q4. The material parameters
Material parameters ZnSe
Lattice constant a = 0.567 nm
Energy gap Eg (eV) 2.82 eV
electron effective mass me* = 0.16mo
Hole effective masses m* = 0.75m
h o
relative dielectric constant ∈r = 9.1

(d) Fig. Q4 shows the transmission spectra of a Ga0.47In0.53As lattice matched to InP for
various doping concentrations. For a p-type Zn doping level of p = 4 x 1018 cm-3, no
appreciable shift of the absorption edge is observed as compared to the undoped
Ga0.47In0.53As. However, a significant shift is observed for n-type Ga0.47In0.53As as
the doping level increases. Briefly explain why there is a significant shift in the
absorption edge in n-type as compared to p-type Ga0.47In0.53As with increasing doping
level.
(5 marks)

Fig. Q4

End of Paper
 EE5508 – Semiconductor Fundamentals/ Page 5

Appendix A: Fundamental Constants

Electronic charge: e = 1.6022 × 10-19 C

Electron rest mass: m0 = 9.109× 10-31 kg

Boltzmann constant: kB = 1.381 × 10-23 J K-1 = 8.618 ×10-5 eV K-1

-34 h
Planck constant: h = 6.626 × 10 J s,  = = 1.055 × 10 − 34 Js
2π
Rydberg’s constant for hydrogen: RH = 13.606 eV
Bohr radius for hydrogen: aH = 5.292 × 10-11 m
Electrical permittivity of free space: εo = 8.85× 10-12 F/m
Magnetic permeability of free space: µo = 4π × 10-7 H/m
Speed of light in free space: 2.9979 × 108 m/s
Avogadro's Constant: 6.022 × 1023 mol-1

Others:
Thermal energy at room temperature (300 K): kBT = 25.85 meV
Photon wavelength λ (µm) in vacuum =1.24/ photon-energy (eV)
1 eV = 1.60 x 10-19 J
 EE5508 – Semiconductor Fundamentals/ Page 6

Appendix B

Basis vectors of reciprocal lattice:

For a real lattice with basis vectors 𝑎𝑎⃗1 , ���𝑎𝑎⃗2 , ���𝑎𝑎⃗3 , the corresponding basis vectors of reciprocal
space are defined as

𝑎𝑎�⃗2 ×𝑎𝑎�⃗3 𝑎𝑎�⃗3 ×𝑎𝑎�⃗1 𝑎𝑎�⃗1 ×𝑎𝑎�⃗2

𝑏𝑏�⃗1 = 2𝜋𝜋 �⃗ , 𝑏𝑏�⃗2 = 2𝜋𝜋 �⃗ , 𝑏𝑏�⃗3 = 2𝜋𝜋 �⃗
𝑎𝑎1 ∙(𝑎𝑎�⃗2 ×𝑎𝑎�⃗3 ) 𝑎𝑎1 ∙(𝑎𝑎�⃗2 ×𝑎𝑎�⃗3 ) 𝑎𝑎1 ∙(𝑎𝑎�⃗2 ×𝑎𝑎�⃗3 )

Effective mass of electrons with an energy dispersion E(k):

1 ∂ 2E
(m −1)ij =
 2 ∂k i ∂k j

Group velocity of band electrons:

1 𝑑𝑑𝑑𝑑
𝑣𝑣𝐺𝐺 =
ℏ 𝑑𝑑𝑑𝑑

Density of States for electrons in the conduction band:

me* 2me* ( E − E c )
g c (E) =
π 23

Density of States for holes in the valence band:

mh* 2mh* ( E v − E )
g v (E) =
π 23

Effective density of states in valence band:

32 32
 2πmh* k B Τ   mh* Τ 
N v = 2 2
 = 2.5 × 10 
25
 m-3
 h   0m 300 

Effective density of states in conduction band:

32 32
 2πme* k B Τ   me* Τ 
N c = 2 2
 = 2.5 × 10 
25
 m-3
 h  m
 0 300 

The Fermi-Dirac distribution function:

1
f (E) =
1 + exp ( E − EF ) k BT 
 EE5508 – Semiconductor Fundamentals/ Page 7

Intrinsic carrier concentration as a function of temperature

 E − E Fi 
=ni N C exp  − C 
 k BT 

EFi: position of intrinsic Fermi level

Density of occupied donors:

Nd
nd =
1
1 + exp ( Ed − EF ) k B Τ 
gd

Density of ionized donor states:

Nd
N d− =
1 + g d exp ( EF − Ed ) k B Τ 

Density of occupied acceptors:

Na
na =
1
1 + exp ( EF − Ea ) k B Τ 
ga

Density of ionized acceptor states:

Na
N a− =
1 + g a exp ( Ea − E F ) k B Τ 

Charge-neutrality condition:

n + N a− =p + N d+

Law of mass action:

np = ni2

Carrier concentration as a function of temperature and Fermi level for doped

semiconductors

 E − EF 
=n N C exp  − C 
 k BT 
 E − EF 
p = NV exp  V 
 k BT 
 EE5508 – Semiconductor Fundamentals/ Page 8

Conductivity of semiconductor

𝜎𝜎 = 𝑒𝑒(𝜇𝜇𝑝𝑝 𝑝𝑝 + 𝜇𝜇𝑛𝑛 𝑛𝑛)

Current density in semiconductors

  
J= Jn + J p
 
J=n ne µnE + eDn ∇n
 
J=p pe µ pE − eDp∇p

Einstein’s relation:

𝐷𝐷𝑛𝑛 = 𝑘𝑘𝐵𝐵 𝑇𝑇𝜇𝜇𝑛𝑛 /𝑒𝑒 for n-type semiconductor

𝐷𝐷𝑝𝑝 = 𝑘𝑘𝐵𝐵 𝑇𝑇𝜇𝜇𝑝𝑝 /𝑒𝑒 for p-type semiconductor

Optical Constants and coefficients:

n~ = n + iκ ; α =
2ωκ
c

n~ = ∈
~ ; ∈
r
~ =∈ +i ∈
r 1 2

n=
1  2
(2
∈1 + ∈1 + ∈2 ) 1 / 2 1/2
 ;κ=
1  2 2
 − ∈1 + ∈1 + ∈2 ( )1 / 2 1/2

2  2 

(n − 1)2 + κ 2 and T =
(1 − R )2 e−αx
R=
(n + 1)2 + κ 2 1 − R 2e − 2αx

Absorption coefficient for direct transition:

α (ω ) = A* (ω − E g )1 / 2 cm-1 (direct transition)

Urbach’s Rule

α = α o exp 
(
 ω − E g  )

 ∆E 

Joint density of states for conduction and valence bands

3/ 2
2  m* 
g (E ) = 2  2r  (ω − Eg )1/ 2
π  

Absorption coefficient for indirect transition:

α a (ω ) =
{ (
A ω − E g − E p 2 )}
E p / k BT
e −1
 EE5508 – Semiconductor Fundamentals/ Page 9

for ω > E g − E p ;

α e (ω ) =
{ (
A ω − E g + E p 2 )} for ω > E g + E p ;
− E p / k BT
1− e

Mott Criterion

0.53 ∈r
a*B N c1 / 3 ≈ 0.24 where a*B = (Å)
(
m* / mo )
The impurity band width

e2
∆ED ≈ N D1/ 3
4π ∈

Burstein Moss Shift

∆ = E F − EC =
 2 k F2
2me *
where k F = 3π 2 n
1/ 3
or( )
∆ = EV − E F =
 2 k F2
2m h *
where k F = 3π 2 p
1/ 3
( )
Radiative recombination rate at non-equilibrium:

For low level injection:

1
Minority carrier lifetime without trap: τ n = (for n-type semiconductor)
ro no
1
Hole minority carrier lifetime without trap: τ p = (for p-type semiconductor)
ro po
For high level injection:
1 1
τn = , τp =
ro ∆n ro ∆p

1
Radiative efficiency: η =
τr
1+
τ nr
Temperature dependence of semiconductor bandgap

 coth ϑ 
E g (T ) = E g (0 ) − S ϑ  − 1
 2 k BT 

Strain effect and critical layer thickness

 EE5508 – Semiconductor Fundamentals/ Page 10

as − a f as
Strain: ε = and critical layer thickness: tc =
af 2ε

Two-dimensional density of States

m*
N (E )dE = 2 dE
π

Infinite square well potential

 2π 2 j 2
The quantized energy level: E z = , j = 1, 2, 3…
2m* L2

Exciton binding energy for bulk semiconductor (3-dimensional)

 m*  R
ε B3 D =  r  H2
 mo  ∈r
∈
where RH = 13.6 eV and relative permittivity ∈r = where ∈ is the permittivity of the
∈o
material and ∈o is the vacuum permittivity.

Exciton radius (3-dimensional)

1
rn = a B
n2
mo ∈r a H
where a B = and a H = 0.53 Å
mr*

The free exciton energy (3-dimesional)

 1 
En = Eg − ε B3 D  2  ; n =1, 2, 3…
n 

Exciton binding energy for quantum well (2-dimensional)

ε B3 D
ε 2D
= , n j = 1,2,3....
B
(n j − 1 / 2)
2

The absorption coefficient of bulk Semiconductor under applied electric field

 4 2 m* 
α (ω ) ∝ exp −
 3 q ξ
e
E g − ω ( )
3/ 2 

 