AOSP21357

30V P-Channel MOSFET

General Description Product Summary

• Latest advanced trench technology VDS -30V

• Low RDS(ON) ID (at VGS=-10V) -16A
• High Current capability RDS(ON) (at VGS=-10V) < 8.5mΩ
• RoHS and Halogen-Free Compliant
RDS(ON) (at VGS=-4.5V) < 13mΩ

Applications 100% UIS Tested

100% Rg Tested
• Notebook AC-in load switch
• Battery protection charge/discharge

SO-8
Top View Bottom View Top View D
D
D
D S 1 8 D
D S 2 7 D
S 3 6 D
G 4 5 D
G G
S S
S
S

Orderable Part Number Package Type Form Minimum Order Quantity

AOSP21357 SO-8 Tape & Reel 3000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TA=25°C -16
ID
Current TA=70°C -12.5 A
Pulsed Drain Current C IDM -64
Avalanche Current C IAS 39 A
C
Avalanche energy L=0.1mH EAS 76 mJ
TA=25°C 3.1
PD W
Power Dissipation B TA=70°C 2.0
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W
RqJA
Maximum Junction-to-Ambient A D Steady-State 59 75 °C/W
Maximum Junction-to-Lead Steady-State RqJL 16 24 °C/W

Rev.3.0: February 2020 www.aosmd.com Page 1 of 5

 AOSP21357

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current μA
• Latest TJ=55°C -5
advanced Gate-Body leakage current VDS=0V, VGS=±25V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -1.3 -1.75 -2.3 V
VGS=-10V, ID=-16A 7 8.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 9.6 11.6
VGS=-4.5V, ID=-12A 10.5 13 mΩ
gFS Forward Transconductance VDS=-5V, ID=-16A 50 S
VSD Diode Forward Voltage IS=-1A, VGS=0V -0.7 -1 V
IS Maximum Body-Diode Continuous Current -4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2830 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 430 pF
Crss Reverse Transfer Capacitance 365 pF
Rg Gate resistance f=1MHz 14 28 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 50 70 nC
Qg(4.5V) Total Gate Charge 25 35 nC
VGS=-10V, VDS=-15V, ID=-16A
Qgs Gate Source Charge 9 nC
Qgd Gate Drain Charge 12 nC
tD(on) Turn-On DelayTime 12 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=0.95W, 12.5 ns
tD(off) Turn-Off DelayTime RGEN=3W 135 ns
tf Turn-Off Fall Time 63 ns
trr Body Diode Reverse Recovery Time IF=-16A, di/dt=500A/ms 32 ns
Qrr Body Diode Reverse Recovery Charge IF=-16A, di/dt=500A/ms 62 nC

A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.3.0: February 2020 www.aosmd.com Page 2 of 5

 AOSP21357

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 50
-10V -4V
VDS=-5V
40 -4.5V -3.5V
40

30 30
-ID (A)

-ID (A)
20 -3V 20 125°C

10 10 25°C
VGS=-2.5V
0 0
0 1 2 3 4 5 1 2 3 4 5

-VDS (Volts) -VGS (Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

20 1.6

Normalized On-Resistance
VGS=-10V
15 1.4 ID=-16A
RDS(ON) (mW)

VGS=-4.5V
10 1.2

VGS=-4.5V
ID=-12A
5 VGS=-10V 1

0 0.8
0 4 8 12 16 20 0 25 50 75 100 125 150 175

-ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

25 1.0E+01
ID=-16A
1.0E+00
20

1.0E-01 125°C
RDS(ON) (mW)

15
-IS (A)

125°C
1.0E-02
10
1.0E-03 25°C

5
25°C 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
(Note E) (Note E)

Rev.3.0: February 2020 www.aosmd.com Page 3 of 5

 AOSP21357

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 4000
VDS=-15V
ID=-16A 3500
8 Ciss
3000

Capacitance (pF)
2500
-VGS (Volts)

6
2000
4
1500

1000
2 Coss
500
Crss
0 0
0 10 20 30 40 50 60 0 5 10 15 20 25 30

Qg (nC) -VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0
10000
TJ(Max)=150°C
100.0 10ms TA=25°C
10ms
1000
RDS(ON)
100ms
10.0 limited
-ID (Amps)

Power (W)

1ms
100
10ms
1.0
100ms
TJ(Max)=150°C
10
0.1 TA=25°C
DC

0.0 1
0.01 0.1 1 10 100 1E-06 0.0001 0.01 1 100 10000
-VDS (Volts) Pulse Width (s)
VGS> or equal to -4.5V Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Ambient (Note F)
Safe Operating Area (Note F)

10
D=Ton/T In descending order
ZqJA Normalized Transient

TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RqJA=75°C/W

0.1

PDM
0.01 Single Pulse
Ton
T
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev.3.0: February 2020 www.aosmd.com Page 4 of 5

 AOSP21357

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr td(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L EAR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Rev.3.0: February 2020 www.aosmd.com Page 5 of 5