STD6N52K3

Datasheet

N-channel 525 V, 1 Ω typ., 6.5 A MDmesh™ K3

Power MOSFET in DPAK package

Features
TAB Order codes VDS RDS(on) max. ID PTOT

STD6N52K3 525 V 1.2 Ω 5A 70 W

2 3
1 • 100% avalanche tested
DPAK • Extremely high dv/dt capability
• Very low intrinsic capacitance
D(2, TAB) • Improved diode reverse recovery characteristics
• Zener-protected

G(1)
Applications
• Switching applications

S(3) AM01475V1 Description

This MDmesh™ K3 Power MOSFET is the result of improvements applied to
STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical
structure. This device boasts an extremely low on-resistance, superior dynamic
performance and high avalanche capability, rendering it suitable for the most
demanding applications.

Product status link

STD6N52K3

Product summary

Order code STD6N52K3

Marking 6N52K3
Package DPAK
Packing Tape and reel

DS5919 - Rev 3 - September 2018 www.st.com

For further information contact your local STMicroelectronics sales office.
 STD6N52K3
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate- source voltage ±30 V

ID Drain current (continuous) at TC = 25 °C 5 A

ID Drain current (continuous) at TC = 100 °C 3 A

IDM (1) Drain current (pulsed) 20 A

PTOT Total dissipation at TC = 25 °C 70 W

IAR Avalanche current, repetitive or not-repetitive 2.5 A

EAS (2) Single pulse avalanche energy 110 mJ

dv/dt (3) Peak diode recovery voltage slope 12 V/ns

Tstg Storage temperature range

-55 to 150 °C
Tj Operating junction temperature range

1. Pulse width limited by safe operating area.

2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
3. ISD ≤ 5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS, VDS peak ≤ V(BR)DSS.

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 1.79 °C/W

Rthj-pcb (1) Thermal resistance junction-pcb 50 °C/W

1. When mounted on 1inch² FR-4 board, 2 oz Cu.

DS5919 - Rev 3 page 2/18

 STD6N52K3
Electrical characteristics

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 3. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 1 mA, VGS = 0 V 525 V
voltage
VGS = 0 V, VDS = 525 V 1 µA
Zero gate voltage drain
IDSS VGS = 0 V, VDS = 525 V
current 50 µA
TC = 125 °C (1)

IGSS Gate body leakage current VGS = ±20 V, VDS = 0 V ±10 µA

VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V

Static drain-source on
RDS(on) VGS = 10 V, ID = 2.5 A 1 1.2 Ω
resistance

1. Defined by design, not subject to production test.

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance 670

VDS = 50 V, f = 1 MHz,
Coss Output capacitance - 54 - pF
VGS = 0 V
Crss Reverse transfer capacitance 10

VGS = 0 V,
Coss eq. (1) Equivalent output capacitance 40 pF
VDS = 0 to 420 V

RG Intrinsic gate resistance f = 1 MHz open drain - 4 - Ω

Qg Total gate charge VDD = 420 V, ID = 5 A, 26

Qgs Gate-source charge VGS = 0 to 10 V - 4 - nC

(see Figure 15. Test circuit for
Qgd Gate-drain charge gate charge behavior) 15

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.

Table 5. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 260 V, ID = 2.5 A, 10

tr Rise time RG = 4.7 Ω, VGS = 10 V 11

td(off) (see Figure 14. Test circuit for - - ns

Turn-off delay time 31
resistive load switching times
and Figure 19. Switching time
tf Fall time 18
waveform)

DS5919 - Rev 3 page 3/18

 STD6N52K3
Electrical characteristics

Table 6. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current 5

- A
ISDM (1) Source-drain current (pulsed) 20

VSD (2) Forward on voltage ISD = 5 A, VGS = 0 V - 1.5 V

trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs 206 ns

Qrr Reverse recovery charge VDD = 60 V (see Figure 1.4 μC

16. Test circuit for inductive -

IRRM Reverse recovery current load switching and diode 14 A

recovery times)
trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs 233 ns

Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C 1.7 μC

-
(see Figure 16. Test circuit for
IRRM Reverse recovery current inductive load switching and 15 A
diode recovery times)

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Table 7. Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

Gate-source breakdown
V(BR)GSO ID = 0 A, IGS = ±1 mA ±30 - V
voltage

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.

DS5919 - Rev 3 page 4/18

 STD6N52K3
Electrical characteristics curves

2.1 Electrical characteristics curves

Figure 1. Safe operating area Figure 2. Thermal impedance

AM08855v1
ID K GC20460
(A)

10 10µs
is
ea ) 100
a r S (on 100µs
is D
th R
in
n m ax
1 tio by
1ms
ra
pe e d
O im it
L 10ms
10-1
0.1
Tj=150°C
Tc=25°C
S ingle puls e
0.01 10-2
0.1 1 10 100 VDS (V) 10-5 10-4 10-3 10-2 10-1 tp (s)

Figure 3. Output characteristics Figure 4. Transfer characteristics

AM08856v1 AM08857v1
ID ID
(A) (A)
VGS =10V
7
10 VDS =15V
7V 6
8
5

6 4
6V 3
4
2
2
1
5V
0 0
0 5 10 15 20 25 VDS (V) 0 2 4 6 8 VGS (V)

Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on resistance

AM08859v1
VGS AM08858v1 VD S R DS (on)
(Ω)
VDD=420V 1.4
12
DS
ID=5A
350
10 1.3
3
8 1.2
250
VGS =10V
6 1.1
150
4 1.0

2 0.9
50
0 0.8
0 10 30 Qg 0 1 2 3 4 ID(A)

DS5919 - Rev 3 page 5/18

 STD6N52K3
Electrical characteristics curves

Figure 7. Capacitance variations Figure 8. Output capacitance stored energy

AM08860v1 AM08861v1
C
E os s
(pF) (µJ )

4.0
1000
Cis s 3.5
3.0

100 2.5
2.0
Cos s
1.5
10
Crs s 1.0

0.5
1 0
0.1 1 10 100 VDS (V) 0 100 200 300 400 500 600 VDS (V)

Figure 9. Normalized gate threshold voltage vs

Figure 10. Normalized on resistance vs temperature
temperature
AM08863v1
AM08862v1 R DS (on)
VGS (th) (norm)
(norm)

1.10 2.5

2.0
1.00
ID =50µA VGS=10V
1.5
0.90
1.0

0.80 0.5

0
0.70 -75 -25 25 75 125 TJ (°C)
-75 -25 25 75 125 TJ (°C)

Figure 11. Source-drain diode forward characteristics Figure 12. Normalized V(BR)DSS vs temperature
AM08865v1 AM08864v1
VS D V(BR)DSS
(V) TJ =-50°C (norm)
0.9
1.10
0.8
TJ =25°C
0.7 1.05

0.6
1.00
0.5
0.95
0.4 TJ =150°C

0.3 0.90
0 1 2 3 4 5 6 7 8 IS D(A) -75 -25 25 75 125 TJ (°C)

DS5919 - Rev 3 page 6/18

 STD6N52K3
Electrical characteristics curves

Figure 13. Maximum avalanche energy vs temperature

AM08866v1
E AS
(mJ ) ID=2.5A
110 VDD=50 V
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 TJ (°C)

DS5919 - Rev 3 page 7/18

 STD6N52K3
Test circuits

3 Test circuits

Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior

VDD

12 V 47 kΩ
1 kΩ
100 nF
RL
2200 3.3
+ μF μF VDD
VD IG= CONST
VGS 100 Ω D.U.T.

VGS
RG D.U.T. pulse width +
2.7 kΩ
2200 VG
pulse width μF
47 kΩ

1 kΩ

AM01468v1 AM01469v1

Figure 16. Test circuit for inductive load switching and

Figure 17. Unclamped inductive load test circuit
diode recovery times

A A A L
D VD
fast 100 µH
G D.U.T. diode 2200 3.3
S B 3.3 1000 + µF µF VDD
B B
25 Ω D
µF + µF VDD ID
G D.U.T.
+ RG S
Vi D.U.T.
_
pulse width

AM01471v1
AM01470v1

Figure 19. Switching time waveform

Figure 18. Unclamped inductive waveform
ton toff
V(BR)DSS
td(on) tr td(off) tf
VD

90% 90%
IDM

10% VDS 10%

ID 0

VDD VDD VGS 90%

0 10%
AM01472v1
AM01473v1

DS5919 - Rev 3 page 8/18

 STD6N52K3
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.

DS5919 - Rev 3 page 9/18

 STD6N52K3
DPAK (TO-252) type A package information

4.1 DPAK (TO-252) type A package information

Figure 20. DPAK (TO-252) type A package outline

0068772_A_25

DS5919 - Rev 3 page 10/18

 STD6N52K3
DPAK (TO-252) type A package information

Table 8. DPAK (TO-252) type A mechanical data

mm
Dim.
Min. Typ. Max.

A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 4.95 5.10 5.25
E 6.40 6.60
E1 4.60 4.70 4.80
e 2.159 2.286 2.413
e1 4.445 4.572 4.699
H 9.35 10.10
L 1.00 1.50
(L1) 2.60 2.80 3.00
L2 0.65 0.80 0.95
L4 0.60 1.00
R 0.20
V2 0° 8°

DS5919 - Rev 3 page 11/18

 STD6N52K3
DPAK (TO-252) type E package information

4.2 DPAK (TO-252) type E package information

Figure 21. DPAK (TO-252) type E package outline

0068772_type-E_rev.25

DS5919 - Rev 3 page 12/18

 STD6N52K3
DPAK (TO-252) type E package information

Table 9. DPAK (TO-252) type E mechanical data

mm
Dim.
Min. Typ. Max.

A 2.18 2.39
A2 0.13
b 0.65 0.884
b4 4.95 5.46
c 0.46 0.61
c2 0.46 0.60
D 5.97 6.22
D1 5.21
E 6.35 6.73
E1 4.32
e 2.286
e1 4.572
H 9.94 10.34
L 1.50 1.78
L1 2.74
L2 0.89 1.27
L4 1.02

Figure 22. DPAK (TO-252) recommended footprint (dimensions are in mm)

FP_0068772_25

DS5919 - Rev 3 page 13/18

 STD6N52K3
DPAK (TO-252) packing information

4.3 DPAK (TO-252) packing information

Figure 23. DPAK (TO-252) tape outline

10 pitches cumulative
tolerance on tape +/- 0.2 mm

Top cover P0 D P2
T tape
E

F
K0 W
B1 B0

For machine ref. only A0 P1 D1

including draft and
radii concentric around B0
User direction of feed

Bending radius
User direction of feed

AM08852v1

DS5919 - Rev 3 page 14/18

 STD6N52K3
DPAK (TO-252) packing information

Figure 24. DPAK (TO-252) reel outline

40mm min.
access hole
at slot location
B

D C

N
A

Tape slot G measured

in core for at hub
Full radius tape start
2.5mm min.width

AM06038v1

Table 10. DPAK (TO-252) tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R 40
T 0.25 0.35
W 15.7 16.3

DS5919 - Rev 3 page 15/18

 STD6N52K3

Revision history

Table 11. Document revision history

Date Revision Changes

03-Sep-2008 1 Initial release.

– Added new package, mechanical data: D²PAK;
21-Feb-2011 2 – Added new package, mechanical data: TO-220;
– Document status promoted from preliminary data to datasheet.
The part numbers STB6N52K3, STF6N52K3 and STP6N52K3 have been moved to a
separate datasheet.
Removed maturity status indication from cover page. The document status is production data.
05-Sep-2018 3 Updated title and features in cover page.
Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and Section
4 Package information.
Minor text changes.

DS5919 - Rev 3 page 16/18

 STD6N52K3
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2 DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

DS5919 - Rev 3 page 17/18

 STD6N52K3

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© 2018 STMicroelectronics – All rights reserved

DS5919 - Rev 3 page 18/18