KTN2222 Kec

Download as pdf or txt
Download as pdf or txt
You are on page 1of 5

SEMICONDUCTOR KTN2222/A

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.


SWITCHING APPLICATION.
B C

FEATURES
・Low Leakage Current

A
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.
・Low Saturation Voltage N DIM MILLIMETERS
E A 4.70 MAX
K
: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. G B 4.80 MAX
D C 3.70 MAX
・Complementary to the KTN2907/2907A. D 0.45

J
E 1.00
・KTN2222/2222A Electrically Similar to 2N2222/2222A. F 1.27
G 0.85
H 0.45
H J _ 0.50
14.00 +
F F K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1 2 3

C
L

M
1. EMITTER
MAXIMUM RATING (Ta=25℃) 2. BASE
3. COLLECTOR
RATING
CHARACTERISTIC SYMBOL UNIT
KTN2222 KTN2222A
Collector-Base Voltage VCBO 60 75 V TO-92

Collector-Emitter Voltage VCEO 30 40 V


Emitter-Base Voltage VEBO 5 6 V
Collector Current IC 600 mA
Collector Power Dissipation
PC 625 mW
(Ta=25℃)
Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55~150 ℃

2003. 6. 16 Revision No : 2 1/5


KTN2222/A

ELECTRICAL CHARACTERISTICS (Ta=25℃)


CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current KTN2222A ICEX VCE=60V, VEB(OFF)=3V - - 10 nA
KTN2222 VCB=50V, IE=0 - - 0.01
Collector Cut-off Current ICBO μA
KTN2222A VCB=60V, IE=0 - - 0.01
Emitter Cut-off Current KTN2222A IEBO VEB=3V, IC=0 - - 10 nA
KTN2222 60 - -
Collector-Base
V(BR)CBO IC=10μA, IE=0 V
Breakdown Voltage KTN2222A 75 - -

Collector-Emitter * KTN2222 30 - -
V(BR)CEO IE=10mA, IB=0 V
Breakdown Voltage KTN2222A 40 - -

Emitter-Base KTN2222 5 - -
V(BR)EBO IE=10μA, IC=0 V
Breakdown Voltage KTN2222A 6 - -
hFE(1) IC=0.1mA, VCE=10V 35 - -

KTN2222 hFE(2) IC=1mA, VCE=10V 50 - -


KTN2222A hFE(3) IC=10mA, VCE=10V 75 - -
DC Current Gain *
hFE(4) IC=150mA, VCE=10V 100 - 300
KTN2222 30 - -
hFE(5) IC=500mA, VCE=10V
KTN2222A 40 - -
KTN2222 - - 0.4
VCE(sat)1 IC=150mA, IB=15mA
Collector-Emitter * KTN2222A - - 0.3
V
Saturation Voltage KTN2222 - - 1.6
VCE(sat)2 IC=500mA, IB=50mA
KTN2222A - - 1
KTN2222 - - 1.3
VBE(sat)1 IC=150mA, IB=15mA
Base-Emitter * KTN2222A 0.6 - 1.2
V
Saturation Voltage KTN2222 - - 2.6
VBE(sat)2 IC=500mA, IB=50mA
KTN2222A - - 2.0
KTN2222 250 - -
Transition Frequency fT IC=20mA, VCE=20V, f=100MHz MHz
KTN2222A 300 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz - - 8 pF
KTN2222 - - 30
Input Capacitance Cib VEB=0.5V, IC=0, f=1.0MHz pF
KTN2222A - - 25
* Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%.

2003. 6. 16 Revision No : 2 2/5


KTN2222/A

ELECTRICAL CHARACTERISTICS (Ta=25℃)


CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
IC=1mA, VCE=10V, f=1kHz 2 - 8
Input Impedance KTN2222A hie kΩ
IC=10mA, VCE=10V, f=1kHz 0.25 - 1.25
IC=1mA, VCE=10V, f=1kHz - - 8
Voltage Feedback Ratio KTN2222A hre x10-4
IC=10mA, VCE=10V, f=1kHz - - 4
IC=1mA, VCE=10V, f=1kHz 50 - 300
Small-Singal Current Gain KTN2222A hfe
IC=10mA, VCE=10V, f=1kHz 75 - 375
IC=1mA, VCE=10V, f=1kHz 5 - 35
hoe Ω
Collector Output Admittance KTN2222A μ
IC=10mA, VCE=10V, f=1kHz 25 - 200
Collector-Base Time Constant KTN2222A Cc・rbb' IE=20mA, VCB=20V, f=31.8MHz - - 150 pS
IC=100μA, VCE=10V,
Noise Figure KTN2222A NF - - 4 dB
Rg=1kΩ, f=1kHz
Delay Time td VCC=30V, VBE(OFF)=0.5V - - 10
Rise Time tr IC=150mA, IB1=15mA - - 25
Switching Time nS
Storage Time tstg VCC=30V, IC=150mA - - 225
Fall Time tf IB1=-IB2=15mA - - 60

2003. 6. 16 Revision No : 2 3/5


KTN2222/A

IC - VCE hFE - IC

1000 1K
COLLECTOR CURRENT IC (mA)

COMMON EMITTER VCE =10V


Ta=25 C

DC CURRENT GAIN hFE


500
800
20mA 16mA 300
18mA 14mA Ta=75 C
12mA Ta=25 C
600 10mA Ta=-25 C
8mA
6mA 100 VCE =1V
4mA VCE =2V
400
I B =2mA 50
30
200

10
0 0.4 0.8 1.2 1.6 1.8 0.5 1 3 10 30 100 300 1K

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VCE(sat) - IC VBE(sat) - IC
COLLECTOR-EMITTER SATURATION

0.6 1.6
COMMON EMITTER
BASE-EMITTER SATURATION

COMMON EMITTER
I C /I B =10 I C /I B =10
1.4
VOLTAGE VBE(sat) (V)

Ta=25 C
VOLTAGE VCE(sat) (V)

1.2
VBE(sat)
0.4
1.0
Ta=-25 C
0.8
Ta=25 C
0.6
0.2
Ta=75 C
0.4
VCE(sat) 0.2
0 0
0.5 1 3 10 30 100 300 1k 0.5 1 3 10 30 100 300 1k

COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

IC - VBE fT - IC
TRANSITION FREQUENCY fT (MHz)

500 COMMON EMITTER 1000


300 Ta=25 C
VCE =10V VCE =10V
COLLECTOR CURRENT IC (mA)

100 300

30
Ta=75 C 100
10

3
C
25

30
Ta=

Ta=-25 C
1

0.3 10
1 3 10 30 100 300 1k 3k
0.1
0.05
0.3 0.4 0.5 0.9 1.0 COLLECTOR CURRENT IC (mA)
0.2 0.6 0.7 0.8

BASE-EMITTER VOLTAGE VBE (V)

2003. 6. 16 Revision No : 2 4/5


KTN2222/A

Cob - VCB Pc - Ta
COLLECTOR OUTPUT CAPACITANCE Cob (pF)

Cib - VEB
COLLECTOR INPUT CAPACITANCE Cib (pF)

COLLECTOR POWER DISSIPATION


100 700
COMMON EMITTER
f=1MHz, Ta=25 C 600
30
500

PC (mW)
Cib
400
10
300

Cob 200
3.0
100

1.0 0
0.1 1.0 10 100 300 0 25 50 75 100 125 150 175

COLLECTOR-BASE VOLTAGE VCB (V) AMBIENT TEMPERATURE Ta ( C)


EMITTER-BASE VOLTAGE VEB (V)

2003. 6. 16 Revision No : 2 5/5

You might also like