SEMICONDUCTOR KTC4373

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

HIGH VOLTAGE APPLICATION.

FEATURES A
C
ᴌHigh Voltage : VCEO=120V.
H
ᴌHigh Transition Frequency : fT=120MHz(Typ.). G

ᴌ1W(Monunted on Ceramic Substrate).

B
ᴌSmall Flat Package.

E
DIM MILLIMETERS
ᴌComplementary to KTA1661. A 4.70 MAX
D D B _ 0.20
2.50 +
K C 1.70 MAX
D 0.45+0.15/-0.10
F F
E 4.25 MAX
F _ 0.10
1.50 +
G 0.40 TYP
MAXIMUM RATING (Ta=25ᴱ) H 1.75 MAX
1 2 3
J 0.75 MIN
CHARACTERISTIC SYMBOL RATING UNIT K 0.5+0.10/-0.05

Collector-Base Voltage VCBO 120 V

1. BASE
Collector-Emitter Voltage VCEO 120 V 2. COLLECTOR (HEAT SINK)
3. EMITTER
Emitter-Base Voltage VEBO 5 V
Collector Current IC 800 mA
Base Current IB 160 mA
SOT-89
PC 500 mW
Collector Power Dissipation
PC* 1 W
Junction Temperature Tj 150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
PC* : KTC4373 mounted on ceramic substrate (250mm x0.8t) 2
Marking
h FE Rank Lot No.

Type Name
C

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=120V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 120 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 5.0 - - V
DC Current Gain hFE (Note) VCE=5V, IC=100mA 80 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 1.0 V
Base-Emitter Voltage VBE VCE=5V, IC=500mA - - 1.0 V
Transition Frequency fT VCE=5V, IC=100mA - 120 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 30 pF
Note : hFE Classification O:80ᴕ160, Y:120ᴕ240

1998. 6. 15 Revision No : 2 1/2

 KTC4373

I C - V CE h FE - I C
800 500
50 20 COMMON EMITTER
COLLECTOR CURRENT I C (mA)

COMMON EMITTER
10 300 V CE =5V

DC CURRENT GAIN hFE

Ta=25 C
Tc=100 C
600
5 Tc=25 C
100
400 3 Tc=-25 C
50
2
30
200
I B =1mA

0
0 10
0 4 8 12 16 20 24 3 10 30 100 30 1k

COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)

V CE(sat) - I C
I C - V BE
COLLECTOR-EMITTER SATURATION

1
COMMON EMITTER
0.8
I C /I B =10 COMMON EMITTER
COLLECTOR CURRENT I C (A)

0.5
VOLTAGE VCE(sat) (V)

V CE =5V
0.3
0.6

C
0 C

Ta=-25 C
0.4

Ta=25
Ta=10
0.1
Ta=100 C
Ta=25 C
0.05 0.2
Ta=-25 C
0.03
3 10 30 100 300 1k 0
0 0.2 0.4 0.6 0.8 1.0 1.2
COLLECTOR-CURRENT I C (mA)
BASE EMITTER VOLTAGE V BE (V)

SAFE OPERATING AREA P C - Ta

COLLECTOR POWER DISSIPATION PC (W)

3k 1.2
I C MAX(PULSE) * 1 MOUNTED ON CERAMIC
1m

I C MAX(CONTI- 10 1 SUBSTRATE
COLLECTOR CURRENT I C (mA)

1k m 1.0 (250mm 2 x0.8t)

S *

NUOUS) S
500 * 2 Ta=25 C
300 10 0.8
DC 0m
OP S
ER * 0.6
100 AT 2
IO
50 N
30 0.4

10 0.2
* SINGLE NONREPETITIVE
5 PULSE
3 CURVES MUST BE DERATED
0
LINEARLY WITH INCREASE 0 20 40 60 80 100 120 140 160
IN TEMPERATURE
1 AMBIENT TEMPERATURE Ta ( C)
0.3 1 3 10 30 100 300

COLLECTOR-EMITTER VOLTAGE V CE (V)

1998. 6. 15 Revision No : 2 2/2

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