04 Transistor MOSFET

MOSFET Transistor
A brief introduction
PROF. LUIS RENE VELA GARCIA
2020
Introduction:
The MOSFET (Metal Oxide Semiconductor Field Effect
Transistor) transistor is a semiconductor device which is
widely used for switching and amplifying electronic signals
in the electronic devices.
The MOSFET is a core of integrated circuit and it can be
designed and fabricated in a single chip because of these
very small sizes. The MOSFET is a four terminal device with
source(S), gate (G), drain (D) and body (B) terminals.
The body of the MOSFET is frequently connected to the
source terminal so making it a three terminal device like
field effect transistor. The MOSFET is very far the most
common transistor and can be used in both analog and
digital circuits.
The MOSFET works by electronically varying the width of a channel along which charge carriers
flow. The charge carriers enter the channel at source and exit via the drain. The width of the
channel is controlled by the voltage on an electrode is called gate which is located between
source and drain. It is insulated from the channel near an extremely thin layer of metal oxide.
Operation Modes
Depletion Mode
Enhancement Mode
Depletion Mode
The transistor requires the Gate-Source
voltage, ( VGS ) to switch the device “OFF”.
The depletion mode MOSFET is equivalent
to a “Normally Closed” switch.
Enhancement Mode
The transistor requires a Gate-Source
voltage, ( VGS ) to switch the device “ON”.
The enhancement mode MOSFET is
equivalent to a “Normally Open” switch.
P- Channel MOSFET
The P- Channel MOSFET has a P- Channel region
between source and drain. It is a four terminal
device such as gate, drain, source, body.
The drain and source are heavily doped p+ region
and the body or substrate is n-type.
The flow of current is positively charged holes.
When we apply the negative gate voltage, the
electrons present under the oxide layer with are
pushed downward into the substrate with a
repulsive force.
N- Channel MOSFET
The N-Channel MOSFET has a N- channel region
between source and drain It is a four terminal device
such as gate, drain , source , body.
This type of MOSFET the drain and source are
heavily doped n+ region and the substrate or body is
P- type. The current flows due to the negatively
charged electrons.
Working principle of MOSFET
The aim of the MOSFET is to be able to control the
voltage and current flow between the source and
drain. It works almost as a switch.
The working of MOSFET depends upon the MOS
capacitor. The MOS capacitor is the main part of
MOSFET.
It can be inverted from p-type to n-type by applying
a positive or negative gate voltages respectively.
Working principle of MOSFET
When we apply the positive gate voltage the holes
present under the oxide layer with a repulsive force
and holes are pushed downward with the substrate.
The electrons reach channel is formed. The positive
voltage also attracts electrons from the n+ source
and drain regions into the channel.
Now, if a voltage is applied between the drain and
source, the current flows freely between the source
and drain and the gate voltage controls the electrons
in the channel. Instead of positive voltage if we
apply negative voltage , a hole channel will be
formed under the oxide layer.
Enhancement-mode N-Channel MOSFET
Enhancement-mode MOSFETs make excellent electronics
switches due to their low “ON” resistance and extremely high
“OFF” resistance as well as their infinitely high input resistance
due to their isolated gate.
Enhancement-mode MOSFETs are used in integrated circuits to

produce CMOS type Logic Gates and power switching circuits in
the form of as PMOS (P-channel) and NMOS (N-channel) gates.
CMOS actually stands for Complementary MOS meaning that

the logic device has both PMOS and NMOS within its design.
N-MOSFET
CMOS actually stands for Complementary MOS
Enhancement-mode MOSFETs make excellent electronics

switches due to their low “ON” resistance and extremely high
“OFF” resistance as well as their infinitely high input resistance
due to their isolated gate.
Enhancement-mode MOSFETs are used in integrated circuits to

produce CMOS type Logic Gates and power switching circuits in
the form of as PMOS (P-channel) and NMOS (N-channel) gates.
CMOS actually stands for Complementary MOS meaning that

the logic device has both PMOS and NMOS within its design.
NOT - GATE
CMOS actually stands for Complementary MOS
AND - GATE
CMOS vs TTL
For Example Using the MOSFET as a Switch
In this circuit arrangement an enhanced mode and N-

channel MOSFET is being used to switch a sample
lamp ON and OFF.
The positive gate voltage is applied to the base of the
transistor and the lamp is ON (VGS =+v) or at zero
voltage level the device turns off (VGS=0). If the
resistive load of the lamp was to be replaced by an
inductive load and connected to the relay or diode
which is protect to the load.
In the above circuit, it is a very simple circuit for

switching a resistive load such as lamp or LED.
VS BJT transistor
Advantage of FET transistors
High input impedance (M) (Linear AC amplifier system)
Temperature stable than BJT transistor
Smaller than BJT transistor
Can be fabricated with fewer processing steps.
BJT is bipolar – conduction both hole and electron
Less noise compare to BJT
Usually use as logic switch
Disadvantages
Easy to damage compare to BJT

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MOSFET Transistor

Enhancement-mode MOSFETs are used in integrated circuits to

CMOS actually stands for Complementary MOS meaning that

Enhancement-mode MOSFETs make excellent electronics

Enhancement-mode MOSFETs are used in integrated circuits to

CMOS actually stands for Complementary MOS meaning that

In this circuit arrangement an enhanced mode and N-

In the above circuit, it is a very simple circuit for

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