MP4303

TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1)

MP4303
Industrial Applications
High Power Switching Applications.
Unit: mm
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.

· Small package by full molding (SIP 12 pin)

· High collector power dissipation (4 devices operation)
: PT = 4.4 W (Ta = 25°C)
· High collector current: IC (DC) = 2 A (max)
· High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 120 V

Collector-emitter voltage VCEO 100 V
Emitter-base voltage VEBO 6 V
DC IC 2 JEDEC ―
Collector current A
Pulse ICP 4 JEITA ―
Continuous base current IB 0.5 A
TOSHIBA 2-32C1B
Collector power dissipation
PC 2.2 W Weight: 3.9 g (typ.)
(1 device operation)
Collector power dissipation
PT 4.4 W
(4 devices operation)
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C

Array Configuration

2 3 4 9 10 11

5 8 12
1

6 7
R1 R2 R1 ≈ 4.5 kΩ R2 ≈ 300 Ω

1 2002-11-20
 MP4303
Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance of junction to

ambient ΣRth (j-a) 28.4 °C/W
(4 devices operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes TL 260 °C
(3.2 mm from case for 10 s)

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = 120 V, IE = 0 A ― ― 10 µA

Collector cut-off current ICEO VCE = 100 V, IB = 0 A ― ― 10 µA
Emitter cut-off current IEBO VEB = 6 V, IC = 0 A 0.5 ― 2.5 mA
Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 120 ― ― V
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 A 100 ― ― V
hFE (1) VCE = 2 V, IC = 1 A 2000 ― 15000
DC current gain ―
hFE (2) VCE = 2 V, IC = 2 A 1000 ― ―
Collector-emitter VCE (sat) IC = 1 A, IB = 1 mA ― ― 1.5
Saturation voltage V
Base-emitter VBE (sat) IC = 1 A, IB = 1 mA ― ― 2.0
Transition frequency fT VCE = 2 V, IC = 0.5 A ― 100 ― MHz
Collector output capacitance Cob VCB = 10 V, IE = 0 A, f = 1 MHz ― 20 ― pF

Turn-on time ton Output ― 0.4 ―

IB1
Input
30 Ω

20 µs IB2
Switching time Storage time tstg ― 4.0 ― µs
IB1

VCC = 30 V
IB2

Fall time tf ― 0.6 ―

IB1 = −IB2 = 1 mA, duty cycle ≤ 1%

Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Maximum forward current IFM ― ― ― 2 A

Surge current IFSM t = 1 s, 1 shot ― ― 4 A
Forward voltage VF IF = 0.5 A, IB = 0 A ― ― 2.0 V
Reverse recovery time trr ― 1.0 ― µs
IF = 2 A, VBE = −3 V, dIF/dt = −50 A/µs
Reverse recovery charge Qrr ― 5 ― µC

2 2002-11-20
 MP4303
Flyback-Diode Rating and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Maximum forward current IFM ― ― ― 2 A

Reverse current IR VR = 120 V ― ― 0.4 µA
Reverse voltage VR IR = 100 µA 120 ― ― V
Forward voltage VF IF = 0.5 A ― ― 1.8 V

3 2002-11-20
 MP4303

IC – VCE IC – VBE
4 4
4 2
Common emitter Common emitter
1 Ta = 25°C VCE = 2 V
(A)

(A)
3 3
IC

IC
0.5
Collector current

Collector current
2 0.4 2

0.3

0.2 Ta = 100°C
1 1 25

IB = 0.15 mA −55
0
0 0
0 2 4 6 8 10 0 1 2 3 4 5

Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)

hFE – IC VCE – IB
10000 4.5
Common emitter Common emitter
4.0
(V)

5000 V Ta = 25°C
CE = 2 V
3000 3.5
hFE

VCE

Tc = 100°C
3.0
DC current gain

Collector-emitter voltage

25
1000 2.5
−55

2.0 3 IC = 4 A
500

300 1.5 1.5 2

1
1.0

100 0.5 0.1 0.5

0.03 0.1 0.3 1 3 10
0
Collector current IC (A) 0.1 0.3 1 3 10 30 100 300 500

Base current IB (mA)

VCE (sat) – IC VBE (sat) – IC

10 10
Collector-emitter saturation voltage

Common emitter Common emitter

Base-emitter saturation voltage

IC/IB = 500 IC/IB = 500

5 5
VCE (sat) (V)

VBE (sat) (V)

3 3

Ta = −55°C

25
Ta = −55°C 100
1 1
25
100

0.5 0.5
0.1 0.3 0.5 1 3 5 0.1 0.3 0.5 1 3 5

Collector current IC (A) Collector current IC (A)

4 2002-11-20
 MP4303

rth – tw
300
Curves should be applied in thermal
limited area. (single nonrepetitive pulse) (4)
Transient thermal resistance

100 Below figure show thermal resistance per

1 unit versus pulse width.
rth (°C/W)

30 (3)
(1)
(2)
10
-No heat sink and attached on a circuit board-
(1) 1 device operation
3 (2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation Circuit board
1
0.001 0.01 0.1 1 10 100 1000

Pulse width tw (s)

Safe Operating Area PT – Ta

10 10
Attached on a circuit board
(1) 1 device operation
5 IC max (pulsed)*
(W)

(2) 2 devices operation

8
3 (3) 3 devices operation
PT

(4) 4 devices operation

10 ms* 100 µs*

Total power dissipation

6
(A)

1
1 ms*
(4)
IC

Circuit board
0.5
4
Collector current

(3)
0.3
(2)
2 (1)

0.1

0
0.05 0 40 80 120 160 200
0.03 *: Single nonrepetitive pulse
Ta = 25°C Ambient temperature Ta (°C)
Curves must be derated linearly VCEO
with increase in temperature. max
0.01
1 3 5 10 30 50 100 300

Collector-emitter voltage VCE (V)

∆Tj – PT
200
(°C)

160
Junction temperature increase ∆Tj

Circuit board

(1) (2) (3) (4)

120

80

Attached on a circuit board

40 (1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
0
0 1 2 3 4 5

Total power dissipation PT (W)

5 2002-11-20
 MP4303

RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

6 2002-11-20
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.