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    NPN Triple Diffused KSD5702 Planar Silicon Transistor: Color TV Horizontal Output Application (Damper Diode Built In)

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    Eduardo Luna Silva
    This document provides specifications for the KSD5702 NPN triple diffused planar silicon transistor intended for use as a horizontal output transistor in color TV applications. Key features include a high collector-base voltage rating of 1500V and fast switching speed of 0.4 microseconds. Electrical characteristics include a DC current gain of 10-30, collector-emitter saturation voltage of 2-5V, and current gain bandwidth product of 3MHz.

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    NPN Triple Diffused KSD5702 Planar Silicon Transistor: Color TV Horizontal Output Application (Damper Diode Built In)

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    Eduardo Luna Silva
    86 views3 pages
    This document provides specifications for the KSD5702 NPN triple diffused planar silicon transistor intended for use as a horizontal output transistor in color TV applications. Key features include a high collector-base voltage rating of 1500V and fast switching speed of 0.4 microseconds. Electrical characteristics include a DC current gain of 10-30, collector-emitter saturation voltage of 2-5V, and current gain bandwidth product of 3MHz.

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    This document provides specifications for the KSD5702 NPN triple diffused planar silicon transistor intended for use as a horizontal output transistor in color TV applications. Key features include a high collector-base voltage rating of 1500V and fast switching speed of 0.4 microseconds. Electrical characteristics include a DC current gain of 10-30, collector-emitter saturation voltage of 2-5V, and current gain bandwidth product of 3MHz.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    86 views3 pages

    NPN Triple Diffused KSD5702 Planar Silicon Transistor: Color TV Horizontal Output Application (Damper Diode Built In)

    Uploaded by

    Eduardo Luna Silva
    This document provides specifications for the KSD5702 NPN triple diffused planar silicon transistor intended for use as a horizontal output transistor in color TV applications. Key features include a high collector-base voltage rating of 1500V and fast switching speed of 0.4 microseconds. Electrical characteristics include a DC current gain of 10-30, collector-emitter saturation voltage of 2-5V, and current gain bandwidth product of 3MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 3

    NPN TRIPLE DIFFUSED

    KSD5702 PLANAR SILICON TRANSISTOR

    COLOR TV HORIZONTAL OUTPUT


    TO-3PF
    APPLICATION (DAMPER DIODE BUILT IN)

    • High Collector-Base Voltage (VCBO=1500V)


    • High Switching Speed (tf. max=0.4uS)

    ABSOLUTE MIXIMUM RATING


    Characteristic Symbol Rating Unit
    Collector Base Voltage VCBO 1500 V
    Collector Emitter Voltage VCEO 800 V
    Emitter Base Voltage VEBO 6 V
    Collector Current IC 6 A
    Collector Current (Peak) IC 16 A
    Collector Dissipation (T C=25&) PC 60 W
    Junction Temperature TJ 150 & 1.Base 2.Collector 3.Emitter
    Storage Temperature T STG -50 ~ 150 &

    ELECTRICAL CHARACTERISTICS (T C=25&)


    Characteristic Symbol Test Condition Min Typ Max Unit
    Collector Cutoff Current ICBO VCB = 800V, IE = 0 10 uA
    Emitter Cutoff Current IEBO VEB = 4V, IC = 0 40 200 mA
    DC Current Gain hFE 1 VCE = 5V, IC = 1A 10 30 -
    hFE 2 VCE = 5V, IC = 3A 5 15
    Collector Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 0.8A 2 5 V
    Base Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 0.8A 1.5 V
    Current Gain Bandwidth Product fT VCE = 10V, IC = 1A 3 MHz
    Damper Diode Turn On Voltage VF IF = 6A 2 V
    Fall Time tF IC = 4A, IB1 = 0.8A 0.4 uS
    IB2 = - 1.6A, VCC = 200V
    RL = 50 Î
    NPN TRIPLE DIFFUSED
    KSD5072 PLANAR SILICON TRANSISTOR
    NPN TRIPLE DIFFUSED
    KSD5072 PLANAR SILICON TRANSISTOR

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