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    Analog Electronics 2023

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    MBIEDA NGOMEGNI FRANK GAETAN
    The document is a description of a second semester examination for an Analogue Electronics II course. The exam is 2 hours long and consists of two exercises worth a total of 70 marks. Exercise 1 (20 marks) involves static and dynamic analysis of a bipolar junction transistor amplifier circuit. Exercise 2 (10 marks) involves determining the Thevenin equivalent circuit, transfer bias line equation, DC load line equation, and drain current IDQ of a field effect transistor amplifier circuit. Students are instructed to show orderly work and use good English.

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    Analog Electronics 2023

    Uploaded by

    MBIEDA NGOMEGNI FRANK GAETAN
    41 views2 pages
    The document is a description of a second semester examination for an Analogue Electronics II course. The exam is 2 hours long and consists of two exercises worth a total of 70 marks. Exercise 1 (20 marks) involves static and dynamic analysis of a bipolar junction transistor amplifier circuit. Exercise 2 (10 marks) involves determining the Thevenin equivalent circuit, transfer bias line equation, DC load line equation, and drain current IDQ of a field effect transistor amplifier circuit. Students are instructed to show orderly work and use good English.

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    Analog Electronics 2023

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    The document is a description of a second semester examination for an Analogue Electronics II course. The exam is 2 hours long and consists of two exercises worth a total of 70 marks. Exercise 1 (20 marks) involves static and dynamic analysis of a bipolar junction transistor amplifier circuit. Exercise 2 (10 marks) involves determining the Thevenin equivalent circuit, transfer bias line equation, DC load line equation, and drain current IDQ of a field effect transistor amplifier circuit. Students are instructed to show orderly work and use good English.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    41 views2 pages

    Analog Electronics 2023

    Uploaded by

    MBIEDA NGOMEGNI FRANK GAETAN
    The document is a description of a second semester examination for an Analogue Electronics II course. The exam is 2 hours long and consists of two exercises worth a total of 70 marks. Exercise 1 (20 marks) involves static and dynamic analysis of a bipolar junction transistor amplifier circuit. Exercise 2 (10 marks) involves determining the Thevenin equivalent circuit, transfer bias line equation, DC load line equation, and drain current IDQ of a field effect transistor amplifier circuit. Students are instructed to show orderly work and use good English.

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    You are on page 1of 2

    SECOND SEMESTER CA EXAMINATION

    Department: School of Engineering Course Title: Analogue Electronics II Course code:

    Course Status: Networks and Security Duration: 2hrs Level: 100 Total Marks: 70

    Lecturer: Dr. MBIEDA N. Frank Gaetan

    INSTRUCTIONS:

    Students are to answer all questions. Good English and orderly presentation of work is highly

    Exercise 1: Bipolar Junction Transistor Amplifier (20 Marks)

    Consider the NPN Silicium transistor amplifier below;

    I. Static Analysis Regime


    1) Determine the equivalent Circuit of the above figure corresponding to Static regime. (1
    marks)
    2) Determine the elements RB et VBB of the generator of the Thevenin equivalent for the
    transistor at the point of polarization; (2 marks)
    3) Taking  = 120 and VBE =0.7V, calculate the values of polarization, IB0, IC0 and VCE0. (5
    marks)
    4) Draw the DC bias line and DC load line, and determine the point of operation of the
    transistor. (3 marks)

    II. Dynamic Analysis Regime


    1. Draw the equivalent circuit of the figure above in Dynamic regime (that is, small signal
    regime). (1 mark)
    Page 1 of 2
    2. Calculate the value of the capacitor CE using the rule ( ). (1 mark)

    3. Calculate the parameter r such that: , with IC0 in mA. (1 mark)


    4. Giving that and that  = 0, compute the dynamic Equations of the transistor.
    (1 mark)
    5. Deduce the equivalent model of the dynamic equivalent circuit or small signal circuit. (1
    mark)
    6. What should be the value of Ru for the charge to receive maximum power? (1 mark)

    7. iu been the current in Ru, calculate the amplification and (3 marks)

    Exercise 2: Field Effect Transistor (10 Marks)

    1) In the amplifier of the figure below, VDD = 20 V; R1 = 1 MΩ; R2 = 15.7 MΩ; RD = 3kΩ,
    and RS = 2kΩ. For the JFET characteristics, give the Thevenin equivalent circuit of the
    corresponding circuit below. (3 marks)
    a) Find the equation of the transfer bias line (2 marks)
    b) Find the equation of the dc load line (3 marks)
    c) Find IDQ, (2 marks)

    Page 2 of 2

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