PD - 94301A

SMPS MOSFET
IRFP90N20D
HEXFET® Power MOSFET
Applications VDSS RDS(on) max ID
l High frequency DC-DC converters
200V 0.023Ω 94Ao

Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-247AC

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 94o
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 66 A
IDM Pulsed Drain Current  380
PD @TC = 25°C Power Dissipation 580 W
Linear Derating Factor 3.8 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt ƒ 6.7 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.26
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40

Notes  through o are on page 8

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IRFP90N20D

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.24 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.023 Ω VGS = 10V, ID = 56A „
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = V GS, ID = 250µA
––– ––– 25 VDS = 200V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 39 ––– ––– S VDS = 50V, ID = 56A
Qg Total Gate Charge ––– 180 270 I D = 56A
Qgs Gate-to-Source Charge ––– 45 67 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge ––– 87 130 VGS = 10V, „
td(on) Turn-On Delay Time ––– 23 ––– VDD = 100V
tr Rise Time ––– 160 ––– ns ID = 56A
td(off) Turn-Off Delay Time ––– 43 ––– RG = 1.2Ω
tf Fall Time ––– 79 ––– VGS = 10V „
Ciss Input Capacitance ––– 6040 ––– VGS = 0V
Coss Output Capacitance ––– 1070 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 170 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 8350 ––– VGS = 0V, V DS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 420 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 870 ––– VGS = 0V, VDS = 0V to 160V

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy‚ ––– 1010 mJ
IAR Avalanche Current ––– 56 A
EAR Repetitive Avalanche Energy ––– 58 mJ

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 94 o
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 380

(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 56A, VGS = 0V „
trr Reverse Recovery Time ––– 230 340 ns TJ = 25°C, IF = 56A
Qrr Reverse RecoveryCharge ––– 1.9 2.8 µC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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 IRFP90N20D

1000 1000
VGS VGS
TOP 15V TOP 15V
12V 12V
10V 10V

ID , Drain-to-Source Current (A)

ID , Drain-to-Source Current (A)

100 8.0V 8.0V

7.0V 7.0V
6.0V 6.0V
5.5V 100 5.5V
BOTTOM 5.0V BOTTOM 5.0V
10

5.0V
1 5.0V
10

0.1
20µs PULSE WIDTH 20µs PULSE WIDTH
Tj = 25°C Tj = 175°C
0.01 1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.00

3.5
I D = 94A

3.0
ID , Drain-to-Source Current (Α )

T J = 175°C
2.5
100.00
R DS(on) , Drain-to-Source On Resistance
(Normalized)

2.0

1.5
T J = 25°C
10.00
1.0

VDS = 15V 0.5

20µs PULSE WIDTH

1.00 
V GS = 10V
0.0
5.0 7.0 9.0 11.0 13.0 15.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

VGS, Gate-to-Source Voltage (V) TJ, Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

vs. Temperature
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IRFP90N20D


1000000 12
VGS = 0V, f = 1 MHZ 
I D = 56A
V DS = 160V
Ciss = Cgs + Cgd, Cds SHORTED V DS = 100V
Crss = Cgd V DS = 40V
100000 10
Coss = Cds + Cgd
C, Capacitance(pF)

VGS, Gate-to-Source Voltage (V)

10000 7
Ciss

Coss
1000 5

Crss
100 2

10 0
0 40 80 120 160 200
1 10 100 1000
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000.00 10000

OPERATION IN THIS AREA

LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

T J = 175°C 1000
100.00

100
T J = 25°C
10.00 100µsec

10 1msec

1.00
1 10msec
Tc = 25°C
VGS = 0V Tj = 175°C
Single Pulse
0.10 0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 10 100 1000
VSD , Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRFP90N20D

100 RD
VDS

LIMITED BY PACKAGE
VGS
80
D.U.T.
RG
+
-VDD

60 10V
I D, Drain Current (A)

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

40

Fig 10a. Switching Time Test Circuit

20 VDS
90%

0
25 50 75 100 125 150 175

TC , Case Temperature ( °C)

10%
VGS
Fig 9. Maximum Drain Current vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

1
(Z thJC)

D = 0.50
0.1

0.20
Thermal Response


0.10

0.05
P DM


0.02 SINGLE PULSE
0.01 0.01 (THERMAL RESPONSE) t1

t2

0.001
 Notes:
1. Duty factor D =
2. Peak T J
t1/ t 2
= P DM x Z thJC +TC

0.00001 0.0001 0.001 0.01 0.1 1

t 1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP90N20D


1 5V 2100
ID
TOP 23A
40A
L D R IV E R 1680 BOTTOM 56A
VDS

EAS , Single Pulse Avalanche Energy (mJ)

RG D .U .T +
V 1260
- DD
IA S A
20V
tp 0 .0 1 Ω
840

Fig 12a. Unclamped Inductive Test Circuit

420
V (B R )D SS
tp
0
25 50 75 100 125 150 175

Starting T , Junction
J Temperature ( °C)

Fig 12c. Maximum Avalanche Energy

IAS vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

QG
50KΩ
.2µF
10 V 12V
.3µF
QGS QGD +
V
D.U.T. - DS

VG VGS

3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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 IRFP90N20D

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET® Power MOSFETs

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IRFP90N20D

TO - 247 Package Outline

Dimensions are shown in millimeters (inches)

3.65 (.143 ) -D -
15.90 (.6 26) 3.55 (.140 ) 5.3 0 (.20 9)
15.30 (.6 02) 4.7 0 (.18 5)
0.25 (.01 0) M D B M
-B - -A- 2 .50 (.089)
1 .50 (.059)
5.50 (.21 7) 4

2 0.30 (.80 0)
1 9.70 (.77 5) 5.50 (.2 17) NOTES:
2X
4.50 (.1 77) 1 D IM E N S IO N IN G & T O L E R A N C IN G
P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
1 2 3 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O J E D E C O U T L IN E
-C - T O -2 4 7 -A C .
1 4.80 (.583 )
4 .30 (.170 )
1 4.20 (.559 )
3 .70 (.145 )

2 .40 (.094) L E A D A S S IG N M E N T S
1 .40 (.056 ) 0 .80 (.031)
2 .00 (.079) 3X 1 .00 (.039 ) 3X 0 .40 (.016) 1 - GATE
2X 2 - D R A IN
0 .25 (.010 ) M C A S 2.60 (.10 2) 3 - SOURCE
5.45 (.21 5) 2.20 (.08 7) 4 - D R A IN
3.4 0 (.1 33)
2X 3.0 0 (.1 18)

Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. Coss eff. is a fixed capacitance that gives the same charging time
‚ Starting TJ = 25°C, L = 0.64mH as Coss while VDS is rising from 0 to 80% VDSS
R G = 25Ω, IAS = 56A. o Calculated continuous current based on maximum allowable
ƒ ISD ≤ 56A, di/dt ≤ 470A/µs, VDD ≤ V(BR)DSS, junction temperature. Package limitation current is 90A.
TJ ≤ 175°C

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/01
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
Mouser Electronics

Authorized Distributor

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International Rectifier:
IRFP90N20DPBF