PD- 91880

SMPS MOSFET IRFP460A

HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply ( SMPS ) VDSS Rds(on) max ID
l Uninterruptable Power Supply 500V 0.27Ω 20A
l High speed power switching

Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current TO-247AC G D S
l Effective Coss specified ( See AN1001)

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A
IDM Pulsed Drain Current  80
PD @TC = 25°C Power Dissipation 280 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt ƒ 3.8 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Typical SMPS Topologies:

l Full Bridge
l PFC Boost

Notes  through … are on page 8

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IRFP460A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, I D = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.61 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.27 Ω VGS = 10V, ID = 12A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS , ID = 250µA
––– ––– 25 VDS = 500V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 400V, VGS = 0V, T J = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 11 ––– ––– S VDS = 50V, ID = 12A
Qg Total Gate Charge ––– ––– 105 ID = 20A
Qgs Gate-to-Source Charge ––– ––– 26 nC VDS = 400V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 42 VGS = 10V, See Fig. 6 and 13 „
td(on) Turn-On Delay Time ––– 18 ––– VDD = 250V
tr Rise Time ––– 55 ––– ns ID = 20A
td(off) Turn-Off Delay Time ––– 45 ––– RG = 4.3Ω
tf Fall Time ––– 39 ––– R D = 13Ω,See Fig. 10 „
Ciss Input Capacitance ––– 3100 ––– VGS = 0V
Coss Output Capacitance ––– 480 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 18 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 4430 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 130 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 140 ––– VGS = 0V, VDS = 0V to 400V …
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy‚ ––– 960 mJ
IAR Avalanche Current ––– 20 A
EAR Repetitive Avalanche Energy ––– 28 mJ
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.45
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 20
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 80
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V „
trr Reverse Recovery Time ––– 480 710 ns TJ = 25°C, IF = 20A
Qrr Reverse RecoveryCharge ––– 5.0 7.5 µC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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 IRFP460A

100 100 VGS

VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
10

10

1
4.5V
4.5V

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 150 °C
0.1 1
0.1 1 10 100 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 3.0
20A
ID = 19A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

2.5
TJ = 150 ° C

10 2.0
(Normalized)

TJ = 25 ° C
1.5

1 1.0

0.5

V DS = 50V
20µs PULSE WIDTH VGS = 10V
0.1 0.0
4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRFP460A

100000 20
V G S = 0V, f = 1M Hz ID = 19A
20A
C is s = C g s + C g d , Cd s SHO RTED VDS = 400V
C rs s = C g d

VGS , Gate-to-Source Voltage (V)

VDS = 250V
10000 C oss = C ds + C gd 16 VDS = 100V
C, Capacitance (pF)

C iss
1000 12

C o ss

100 8

C rss
10 4

FOR TEST CIRCUIT

SEE FIGURE 13
1 A 0
1 10 100 1000 0 20 40 60 80 100
V D S , D ra in-to-S ource V oltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

TJ = 150 ° C
I D , Drain Current (A)

10 100
10us

TJ = 25 ° C 100us

1 10

1ms

TC = 25 ° C
TJ = 150 ° C 10ms
V GS = 0 V Single Pulse
0.1 1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 100 1000 10000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRFP460A

20 RD
VDS

VGS
D.U.T.
15
RG
+
I D , Drain Current (A)

-VDD

10V
Pulse Width ≤ 1 µs
10
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

5
VDS
90%

0
25 50 75 100 125 150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

1
Thermal Response (Z thJC )

D = 0.50

0.1 0.20

0.10

0.05

0.02 P DM
0.01 SINGLE PULSE
0.01
(THERMAL RESPONSE) t1
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP460A

2400
1 5V ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP 8.9A
2000 13A
L D R IV E R BOTTOM 20A
VDS

1600
RG D .U .T +
V
- DD
IA S A
1200
20V
tp 0 .0 1 Ω

800
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp 400

0
25 50 75 100 125 150
Starting TJ , Junction Temperature( ° C)

IAS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
QG

10 V
620
QGS QGD
V D S a v , A valanche V oltage (V )

VG
600

Charge
580
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.

50KΩ 560
12V .2µF
.3µF

+
V
D.U.T. - DS
540 A
0 4 8 12 16 20
VGS
I av , A v alanche C urrent (A)
3mA

IG ID
Current Sampling Resistors Fig 12d. Typical Drain-to-Source Voltage
Fig 13b. Gate Charge Test Circuit Vs. Avalanche Current
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 IRFP460A

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

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IRFP460A
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
3.6 5 (.1 43 ) -D -
1 5.9 0 (.6 2 6) 3.5 5 (.1 40 ) 5 .3 0 ( .2 0 9 )
1 5.3 0 (.6 0 2) 4 .7 0 ( .1 8 5 )
0 .25 (.0 1 0 ) M D B M
-B- -A- 2 .5 0 (.0 8 9)
1 .5 0 (.0 5 9)
5 .50 (.21 7 ) 4

2 0 .3 0 (.8 0 0)
1 9 .7 0 (.7 7 5) 5 .50 (.2 1 7 ) NOTES:
2X
4 .50 (.1 7 7 ) 1 D IM E N S IO N ING & TO LE R A N C IN G
P E R A N S I Y 14 .5M , 198 2.
1 2 3 2 C O N T R O L LIN G D IM E N S IO N : IN C H .
3 C O N F O R M S TO JE D E C O U TL IN E
-C - T O -24 7-A C .
1 4 .8 0 (.5 8 3 ) 4 .3 0 (.1 70 )
1 4 .2 0 (.5 5 9 ) 3 .7 0 (.1 45 )

2 .4 0 ( .0 9 4 ) LE A D A S S IG N M E N TS
1 .4 0 (.0 56 ) 0 .8 0 (.0 3 1)
2 .0 0 ( .0 7 9 ) 3 X 1 .0 0 (.0 39 ) 3 X 0 .4 0 (.0 1 6) 1 - G A TE
2X 2 - DR A IN
0 .2 5 (.0 10 ) M C A S 2 .6 0 (.1 0 2 ) 3 - SOURC E
5 .4 5 ( .2 1 5 ) 2 .2 0 (.0 8 7 ) 4 - DR A IN
3 .4 0 (.1 33 )
2X 3 .0 0 (.1 18 )

Part Marking Information

TO-247AC
E X A M P L E : T H IS IS A N IR F P E 30 A
W IT H A S S E M B L Y P AR T N UM B E R
LOT COD E 3A1Q I N T E R N A T IO N A L
R E C T IF IE R IR F P E 3 0
LOGO
3A1Q 9302
ASSEMBLY DATE CO DE
LOT COD E (Y Y W W )
YY = YE A R
W W W EEK
Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 4.3mH … Coss eff. is a fixed capacitance that gives the same charging time
RG = 25Ω, IAS = 20A. (See Figure 12) as Coss while VDS is rising from 0 to 80% VDSS

ƒ ISD ≤ 20A, di/dt ≤ 125A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 6/99
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