IRFP064N

l Advanced Process Technology

TO-247AC
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

Description
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of D
TO-220 devices. The TO-247 is similar but superior to the VDSS = 55V
earlier TO-218 package because of its isolated mounting
hole.
RDS(on) = 0.008Ω
G
ID = 110A†
S

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110†
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 80† A
IDM Pulsed Drain Current … 390
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚… 480 mJ
IAR Avalanche Current 59 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt ƒ… 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40

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 IRFP064N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆T J Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA…
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.008 Ω VGS = 10V, ID = 59A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS , ID = 250µA
gfs Forward Transconductance 42 ––– ––– S V DS = 25V, I D = 59A…
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V
I GSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 170 ID = 59A
Q gs Gate-to-Source Charge ––– ––– 32 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 74 VGS = 10V, See Fig. 6 and 13 „…
t d(on) Turn-On Delay Time ––– 14 ––– VDD = 28V
tr Rise Time ––– 100 ––– I D = 59A
ns
t d(off) Turn-Off Delay Time ––– 43 ––– RG = 2.5Ω
tf Fall Time ––– 70 ––– RD = 0.39Ω, See Fig. 10„…
Between lead, D
LD Internal Drain Inductance ––– 5.0 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 13 –––
and center of die contact S

Ciss Input Capacitance ––– 4000 ––– VGS = 0V

Coss Output Capacitance ––– 1300 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 480 ––– ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 110†
(Body Diode) showing the
ISM Pulsed Source Current integral reverse G

––– ––– 390

(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 59A, VGS = 0V „
t rr Reverse Recovery Time ––– 110 170 ns TJ = 25°C, IF = 59A
Q rr Reverse Recovery Charge ––– 450 680 nC di/dt = 100A/µs „…

Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 190µH … Uses IRF3205 data and test conditions
RG = 25Ω, IAS = 59A. (See Figure 12)
ƒ I SD ≤ 59A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS , † Caculated continuous current based on maximum allowable
TJ ≤ 175°C junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4

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 IRFP064N
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
I , D ra in -to -S o u rce C u rre n t (A )

I , D ra in -to -S o u rc e C u rre n t (A )
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTT OM 4.5V BOTT OM 4.5V

100 100

4.5V
D

D
4.5 V
2 0µ s PU LSE W ID TH 20 µs P UL SE W IDTH
TC = 2 5°C TC = 17 5°C
10 A 10 A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ource V oltage (V ) V D S , Drain-to-Source V oltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.0
I D = 98 A
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
I D , D r ain- to-S ourc e C urre nt (A )

TJ = 2 5 °C
1.5
TJ = 1 7 5 ° C
100
(N o rm a li ze d )

1.0

10

0.5

V DS = 2 5 V
2 0 µ s P U L SE W ID TH V G S = 10 V
1 0.0
A A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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 IRFP064N
8000 20
V GS = 0V, f = 1 MH z I D = 5 9A
C iss = C gs + C gd , C ds SH O R TED V DS = 44 V

V G S , G a te -to -S o u rc e V o lta g e (V )
7000 C rss = C gd
V DS = 28 V
C oss = C ds + C gd 16
V DS = 11 V
6000
C i ss
C , C a p a c ita n c e (p F )

5000 12

4000 C os s

8
3000

2000
C rs s 4

1000
FO R TES T C IR CU IT
SEE FIG U R E 13
0 A 0 A
1 10 100 0 30 60 90 120 150 180

V D S , Drain-to-Source V oltage (V) Q G , Total Gate Charge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
O PER ATION IN TH IS AR EA LIM ITE D
BY R D S(o n)
IS D , R e ve rs e D ra in C u rre n t (A )

10µs
I D , D ra in C u rre n t (A )

100
1 00µs
TJ = 175 °C
100

1m s

10
T J = 2 5°C
10m s

T C = 25 °C
T J = 17 5°C
VG S = 0 V S ing le Pulse
10 A 1 A
0.6 1.0 1.4 1.8 2.2 2.6 3.0 1 10 100
V S D , Source-to-D rain V oltage (V ) V D S , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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 IRFP064N
RD
VDS
120
LIMITED BY PACKAGE VGS
D.U.T.
100 RG
+
- VDD
ID , Drain Current (A)

80 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60

Fig 10a. Switching Time Test Circuit

40
VDS
90%
20

0
25 50 75 100 125 150 175
10%
TC , Case Temperature ( ° C)
VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

1
Thermal Response (Z thJC )

D = 0.50

0.20

0.1 0.10

PDM
0.05
t1
0.02 t2
SINGLE PULSE
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRFP064N
L
VDS 1200
ID

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
D.U.T. TO P 24 A
4 2A
RG 1000
+ B OTTO M 59 A
VDD
-
800
10 V IAS
tp
0.01Ω
600

Fig 12a. Unclamped Inductive Test Circuit

400
V(BR)DSS
tp 200

VDD
VD D = 2 5V
0 A
25 50 75 100 125 150 175
VDS Starting T J , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

IAS Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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 IRFP064N
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

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 IRFP064N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
3 .6 5 (.1 4 3 ) -D -
1 5 .90 (.6 2 6) 3 .5 5 (.1 4 0 ) 5 .3 0 (.2 0 9 )
1 5 .30 (.6 0 2) 4 .7 0 (.1 8 5 )
0 .25 (.0 1 0) M D B M
-B - -A - 2 .5 0 (.0 8 9)
1 .5 0 (.0 5 9)
5 .5 0 (.2 1 7 ) 4

2 0 .3 0 (.80 0 )
5. 50 (.2 17 ) NOT ES :
1 9 .7 0 (.77 5 ) 2X
4. 50 (.1 77 ) 1 DIME NSIO NING & TO LERAN CING
PE R AN SI Y 14.5M, 1982.
1 2 3 2 CO NTRO LLING DIMENS IO N : IN CH .
3 CO NF ORM S T O JEDE C O UTLINE
-C - T O-247-A C.
1 4.8 0 (.5 8 3 )
4 .3 0 (.1 7 0 )
1 4.2 0 (.5 5 9 )
3 .7 0 (.1 4 5 )

2 .4 0 (.09 4 ) LEAD AS SIGN MENT S

1 .4 0 (.0 56 ) 0 .8 0 (. 03 1 )
2 .0 0 (.07 9 ) 3 X 1 .0 0 (.0 39 ) 3 X 0 .4 0 (. 01 6 ) 1 - G ATE
2X 2 - DRAIN
0 .25 (.0 10 ) M C A S 2.6 0 (.10 2 ) 3 - SO URCE
5 .45 (.2 1 5) 2.2 0 (.08 7 ) 4 - DRAIN
3 .4 0 (.1 3 3 )
2X 3 .0 0 (.1 1 8 )

Part Marking Information

TO-247AC
E X AM PL E : T H IS I S A N IR F1 010
E XAM P LE : HT HAISS SISE MB
W IT A N LY
IR FP E3 0 A A
L OT WCO IT H
D EAS9SE MB L Y
B1M I NT E RN A TIO N AL
IN TER N AT IO N AL
P AR T N
P AR T U NU
M B ER
M BE R
L O T C O D E 3 A1 Q
R E C TIF IE R IRIRF
F PE10
3 010
R EC T IF IER
LLOG
O G OO 9246
3 A19B
Q 9 310 2M D A TE C OD E
A SSBELMB
A S SEM Y LY D A TE C O D E
(Y YW W )
L O TLOTC O DCEOD E (Y YW W )
Y Y = YE A R
YY = YE A R
W W = W EE K
W W W EE K

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