BFP405

Surface mount wideband silicon NPN RF bipolar transistor

Product description
The BFP405 is a low noise device based on a grounded emitter (SIEGET™) that is part of
Infineon’s established fourth generation RF bipolar transistor family. Its transition
frequency fT of 25 GHz and low current characteristics make the device suitable for
oscillators up to 12 GHz. It remains cost competitive without compromising on ease of
use.

Feature list
• Minimum noise figure NFmin = 1.25 dB at 1.8 GHz, 2 V, 2 mA
• High gain Gms = 23 dB at 1.8 GHz, 2 V, 5 mA
• OIP3 = 15 dBm at 1.8 GHz, 2 V, 5 mA

Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Potential applications
• Radio-frequency oscillators
• Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio
• LNAs for sub-1 GHz ISM band applications

Device information
Table 1 Part information
Product name / Ordering code Package Pin configuration Marking Pieces / Reel
BFP405 / BFP405H6327XTSA1 SOT343 1=B 2=E 3=C 4=E ALs 3000

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0
www.infineon.com 2019-01-25
BFP405
Surface mount wideband silicon NPN RF bipolar transistor

Table of contents

Table of contents

Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.1 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.2 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.3 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3.4 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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BFP405
Surface mount wideband silicon NPN RF bipolar transistor

Absolute maximum ratings

1 Absolute maximum ratings

Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified)

Parameter Symbol Values Unit Note or test condition
Min. Max.
Collector emitter voltage VCEO – 4.5 V Open base
4.1 TA = -55 °C, open base
Collector emitter voltage VCES 15 E-B short circuited
Collector base voltage VCBO 15 Open emitter
Emitter base voltage VEBO 1.5 Open collector
Base current IB 3 mA –
Collector current IC 25
Total power dissipation 1) Ptot 75 mW TS ≤ 110 °C
Junction temperature TJ 150 °C –
Storage temperature TStg -55

Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Exceeding only one of these values may cause irreversible damage to the integrated
circuit.

1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.
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BFP405
Surface mount wideband silicon NPN RF bipolar transistor

Thermal characteristics

2 Thermal characteristics

Table 3 Thermal resistance

Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Junction - soldering point RthJS – 530 – K/W –

Figure 1 Total power dissipation Ptot = f(TS)

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BFP405
Surface mount wideband silicon NPN RF bipolar transistor

Thermal characteristics

10 3

RthJS

K/W

0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0

10 210 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0
tp

Figure 2 Permissible pulse load RthJS = f(tp)

10 1
Ptotmax/PtotDC

D=0
0.005
0.01
0.02
- 0.05
0.1
0.2
0.5

10 010 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0
tp

Figure 3 Permissible pulse load Ptot,max / Ptot,DC = f(tp)

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BFP405
Surface mount wideband silicon NPN RF bipolar transistor

Electrical characteristics

3 Electrical characteristics

3.1 DC characteristics

Table 4 DC characteristics at TA = 25 °C
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Collector emitter breakdown voltage V(BR)CEO 4.5 5 – V IC = 1 mA, IB = 0,
open base
Collector emitter leakage current ICES – – 10 2) μA VCE = 15 V, VBE = 0,
E-B short circuited
Collector base leakage current ICBO 100 2) nA VCB = 5 V, IE = 0,
open emitter
Emitter base leakage current IEBO 1 2) μA VEB = 0.5 V, IC = 0,
open collector
DC current gain hFE 60 95 130 VCE = 4 V, IC = 5 mA,
pulse measured

3.2 General AC characteristics

Table 5 General AC characteristics at TA = 25 °C

Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Transition frequency fT 18 25 – GHz VCE = 3 V, IC =10 mA,
f = 2 GHz
Collector base capacitance CCB – 0.05 0.1 pF VCB = 2 V, VBE = 0,
f = 1 MHz,
emitter grounded
Collector emitter capacitance CCE 0.24 – VCE = 2 V, VBE = 0,
f = 1 MHz,
base grounded
Emitter base capacitance CEB 0.29 VEB = 0.5 V, VCB = 0,
f = 1 MHz,
collector grounded

2 Maximum values not limited by the device but by the short cycle time of the 100% test.
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BFP405
Surface mount wideband silicon NPN RF bipolar transistor

Electrical characteristics

3.3 Frequency dependent AC characteristics

Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.

VC
Top View

Bias-T
OUT
E C

VB

B E
Bias-T (Pin 1)
IN

Figure 4 Testing circuit

Table 6 AC characteristics, VCE = 2 V, f = 1.8 GHz

Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Power gain – dB
• Maximum power gain Gms – 23 IC = 5 mA
• Transducer gain |S21|2 14 18.5
Noise figure –
• Minimum noise figure NFmin 1.25 IC = 2 mA
Linearity dBm
• 3rd order intercept point at output OIP3 15 ZS = ZL = 50 Ω, IC = 5 mA
• 1 dB gain compression point at output OP 1dB 5

Note: Gms = IS21 / S12 I for k < 1; Gma = IS21 / S12I (k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in
this chapter the test fixture losses have been subtracted from all measured results. OIP3 value
depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.1 MHz to 12 GHz.

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BFP405
Surface mount wideband silicon NPN RF bipolar transistor

Electrical characteristics

3.4 Characteristic AC diagrams

26

GHz
4V
3V

20 2V
fT

1.5V

16

1V

12

0.5V

40 2 4 6 8 10 12 14 16 18 mA 22
IC

Figure 5 Transition frequency fT = f(IC), f = 2 GHz, VCE = parameter

0.3

pF
CCB

0.2

0.15

0.1

0.05

00 0.5 1.0 1.5 2.0 2.5 3.0 V 4.0

VCB

Figure 6 Collector base capacitance CCB = f(VCB), f = 1 MHz

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BFP405
Surface mount wideband silicon NPN RF bipolar transistor

Electrical characteristics

44
dB
40

36

32
G

28

Gms
24

20

16

12 Gma
|S21|²

00 1 2 3 4 5 6 7 8 GHz 10
f

Figure 7 Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 5 mA

40
dB
0.15GHz
36

32 0.45GHz

0.9GHz
28
G

1.5GHz
24
1.9GHz

20 2.4GHz

16 3.5GHz

12
5.5GHz

8
10GHz
4

00 4 8 12 16 20 mA 26
IC

Figure 8 Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz

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BFP405
Surface mount wideband silicon NPN RF bipolar transistor

Electrical characteristics

40
dB
36
0.15GHz
32

0.45GHz
28
G

0.9GHz
24
1.5GHz

2.4GHz
20
3.5GHz
16

12 5.5GHz

10GHz
4

00 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V 6.0
VCE

Figure 9 Maximum power gain Gmax = f(VCE), IC = 5 mA, f = parameter in GHz

+j50

+j25 +j100

+j10
3GHz
4GHz
1.8GHz
5GHz
0.9GHz

0 6GHz
10 25 50 100

2mA
5mA
-j10

-j25 -j100

-j50

Figure 10 Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 2 / 5 mA

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BFP405
Surface mount wideband silicon NPN RF bipolar transistor

Electrical characteristics

3.0

dB

2.0

1.5

1.0 IC = 5 mA
IC = 2 mA

0.5

00 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 GHz 6.0

Figure 11 Noise figure NFmin = f(f), VCE = 1 V, ZS = ZS,opt, IC = 2 / 5 mA

4.0

dB

3.0
F

2.0

f = 6 GHz
f = 5 GHz
1.0 f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz

00 1 2 3 4 5 6 7 8 9 10 mA 12
IC

Figure 12 Noise figure NFmin = f(IC), VCE = 2 V, ZS = ZS,opt, f = parameter in GHz

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BFP405
Surface mount wideband silicon NPN RF bipolar transistor

Electrical characteristics

4.0

dB

F 3.0

2.0

ZS = 50 Ohm
1.0 ZS = ZSopt

00 1 2 3 4 5 6 7 8 9 10 mA 12
IC

Figure 13 Noise figure NFmin = f(IC), ZS = ZS,opt, NF50 = f(IC), ZS = 50 Ω, VCE = 2 V, f = 1.8 GHz

Note: The curves shown in this chapter have been generated using typical devices but shall not be
considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.

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BFP405
Surface mount wideband silicon NPN RF bipolar transistor

Package information SOT343

4 Package information SOT343

0.9 ±0.1
1.25 ±0.1
A

0.1 MAX.
+0.10
0.15 -0.05
0.1 MIN. 0.1
2.1 ±0.1
0.2 A

0.1
0.15

3x
2
3

0.1
2 ±0.2

1.3

+0.10

0.3 -0.05
+0.10
0.6 -0.05
MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED
ALL DIMENS IONS ARE IN UNITS MM
THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ ]

Figure 14 Package outline

Figure 15 Foot print

TYP E CODE

NOTE OF MANUFACTURER
MONTH

YEAR

Figure 16 Marking layout example

2 0.2
8
2.3

P IN 1 2.15 1.1
INDEX MARKING

ALL DIMENS IONS ARE IN UNITS MM

THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ ]

Figure 17 Tape dimensions

Datasheet 13 Revision 2.0

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BFP405
Surface mount wideband silicon NPN RF bipolar transistor

Revision history

Revision history
Document Date of Description of changes
version release
Revision 2.0 2019-01-25 New datasheet layout.

Datasheet 14 Revision 2.0

2019-01-25
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