FS01MR08A8MA2LBC

HybridPACK™ Drive G2 module

Final datasheet
HybridPACK™ Drive G2 module with SiC MOSFET

Features
• Electrical features
- VDSS = 750 V
- IDN = 620 A
- New semiconductor material - silicon carbide
- Low RDS,on
- Low switching losses
- Low Qg and Crss
- Low inductive design
- Tvj,op = 175°C
- Short-time extended operation temperature Tvj,op = 200 °C
• Mechanical features
- 4.2 kV DC 1 second insulation
- High creepage and clearance distances
- Compact design
- High power density
- Direct-cooled PinFin base plate
- High-performance Si3N4 ceramic
- Guiding elements for PCB and cooler assembly
- Integrated temperature sensing diode
- PressFIT contact technology
- RoHS compliant, lead-free
- UL 94 V0 module frame
Potential applications
• Automotive applications
• (Hybrid) electrical vehicles (H)EV
• Motor drives
• Commercial, construction and agricultural vehicles (CAV)
Product validation
• Qualified according to AQG 324, release no.: 03.1/2021

Description

T1 T3 T5 TS1

TS2
T2 T4 T6

TS3

Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00
www.infineon.com 2024-03-14
FS01MR08A8MA2LBC
HybridPACK™ Drive G2 module
Table of contents

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Body diode (MOSFET) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
5 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
8 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Datasheet 2 Revision 1.00

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FS01MR08A8MA2LBC
HybridPACK™ Drive G2 module
1 Package

1 Package
Table 1 Insulation coordination
Parameter Symbol Note or test condition Values Unit
Isolation test voltage VISOL RMS, f = 0 Hz, t = 1 sec 4.20 kV
Material of module Cu+Ni1)
baseplate
Internal isolation basic insulation (class 1, IEC 61140) Si3N4
Creepage distance dcreep terminal to heatsink 9.5 mm
Creepage distance dcreep terminal to terminal 9.5 mm
Clearance dclear terminal to heatsink 4.5 mm
Clearance dclear terminal to terminal 4.5 mm
Comparative tracking CTI > 175
index
1) Ni plated Cu baseplate

Table 2 Maximum rated values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Maximum RMS module It,rms 900 A
terminal current
Heat-staking dome THS tstaking < 10s 280 °C
temperature1)
1) Heat-staking according to application note AN-G2-ASSEMBLY.

Table 3 Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Δp
ΔV/Δt = 10 dm³/min, Tf = 60 °C
Pressure drop in cooling 50% water / 50% ethylenglycol, 761) mbar
circuit
Maximum pressure in p Tbaseplate < 40 °C 3.0 bar
cooling circuit
Tbaseplate ≥ 40 °C (relative pressure) 2.5
Stray inductance module Ls,DS 8.0 nH
Module lead resistance, RDD'+SS' Tf = 25 °C, per switch 0.64 mΩ
terminals - chip
Storage temperature Tstg -40 125 °C
Mounting torque for M Screw M4 baseplate to heatsink 1.8 2.0 2.2 Nm
module mounting2)
Screw EJOT Delta PCB to frame 0.45 0.50 0.55
Weight G 760 g
1) Cooler design and flow direction according to application note AN-G2-ASSEMBLY

Datasheet 3 Revision 1.00

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HybridPACK™ Drive G2 module
2 MOSFET

2) Screw types and torque according to application note AN-G2-ASSEMBLY

2 MOSFET
Table 4 Maximum rated values
Parameter Symbol Note or test condition Values Unit
Drain-source voltage VDSS continuous 750 V
operation
10h over life time 900
DC drain current ID,nom VGS = 18 V, Tf = 65 °C Tvj,max = 175 °C 620 A
Pulsed drain current ID,pulse verified by design, tp limited by Tvj,max 1240 A
Gate-source voltage, max. VGS -5/19 V
static voltage
Gate-source voltage, max. VGS Duty Cycle < 1 % (first transient maximum -10/23 V
transient voltage peak)

Table 5 Recommended values

Parameter Symbol Note or test condition Values Unit
On-state gate voltage VGS(on) 15...18 V
Off-state gate voltage VGS(off) -5...0 V

Table 6 Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Drain-source on-resistance RDS,on ID = 620 A, VGS = 18 V Tvj = 25 °C 1.03 1.69 mΩ
Tvj = 125 °C 1.45
Tvj = 175 °C 1.80
Tvj = 200 °C 2.00
Drain-source on-resistance RDS,on ID = 620 A, VGS = 15 V Tvj = 25 °C 1.28 2.00 mΩ
Tvj = 125 °C 1.65
Tvj = 175 °C 1.99
Tvj = 200 °C 2.21
Gate threshold voltage VGS,th ID = 200 mA, VGS = VDS, Tvj = 25 °C 3.201) 3.90 4.55 V
(tested after 1ms pulse
at VGS = +20 V)
Total gate charge QG VDS = 470 V, VGS = -5/18 V 1.48 µC
Internal gate resistor RG,int Tvj = 25 °C 0.53 Ω
Input capacitance Ciss f = 1 MHz, VDS = 470 V Tvj = 25 °C 43 nF
Output capacitance Coss f = 1 MHz, VDS = 470 V Tvj = 25 °C 2.85 nF
(table continues...)

Datasheet 4 Revision 1.00

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FS01MR08A8MA2LBC
HybridPACK™ Drive G2 module
2 MOSFET

Table 6 (continued) Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Reverse transfer Crss f = 1 MHz, VDS = 470 V Tvj = 25 °C 0.25 nF
capacitance
COSS stored energy Eoss VDS = 470 V Tvj = 25 °C 1250 µJ
Drain-source leakage IDSX VGS = -5 V, VDSS = 750 V Tvj = 25 °C 100 µA
current
Gate-source leakage IGSS VGS = 20 V, VDS = 0 V Tvj = 25 °C 100 nA
current
Turn-on delay time, td,on ID = 620 A, RG,on = 10.5 Ω, Tvj = 25 °C 128 ns
inductive load VGS = -5/18 V, VDS = 470 V
Tvj = 125 °C 107
Tvj = 175 °C 99
Tvj = 200 °C 96
Rise time (inductive load) tr ID = 620 A, RG,on = 10.5 Ω, Tvj = 25 °C 108 ns
VGS = -5/18 V, VDS = 470 V
Tvj = 125 °C 103
Tvj = 175 °C 101
Tvj = 200 °C 99
Turn-off delay time, td,off ID = 620 A, RG,off = 4.2 Ω, Tvj = 25 °C 318 ns
inductive load VGS = -5/18 V, VDS = 470 V
Tvj = 125 °C 339
Tvj = 175 °C 352
Tvj = 200 °C 359
Fall time (inductive load) tf ID = 620 A, RG,off = 4.2 Ω, Tvj = 25 °C 53 ns
VGS = -5/18 V, VDS = 470 V
Tvj = 125 °C 57
Tvj = 175 °C 58
Tvj = 200 °C 59
Turn-on energy loss per Eon ID = 620 A, RG,on = 10.5 Ω, Tvj = 25 °C, 27.60 mJ
pulse VGS = -5/18 V, VDS = 470 V, di/dt = 4.7 kA/µs
Lσ = 6.5 nH
Tvj = 125 °C, 26.40
di/dt = 4.9 kA/µs
Tvj = 175 °C, 26.30
di/dt = 5 kA/µs
Tvj = 200 °C, 26.30
di/dt = 5 kA/µs
(table continues...)

Datasheet 5 Revision 1.00

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HybridPACK™ Drive G2 module
3 Body diode (MOSFET)

Table 6 (continued) Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Turn-off energy loss per Eoff ID = 620 A, RG,off = 4.2 Ω, Tvj = 25 °C, 22.90 mJ
pulse VGS = -5/18 V, VDS = 470 V, du/dt = 6 kV/µs
Lσ = 6.5 nH
Tvj = 125 °C, 23.80
du/dt = 5.9 kV/µs
Tvj = 175 °C, 24.30
du/dt = 5.8 kV/µs
Tvj = 200 °C, 24.50
du/dt = 5.8 kV/µs
Short circuit data ISC VDD = 470 V, VGS = -5/18 V, tSC = 1.2 µs, 10000 A
RG,on = 10.5 Ω, Tvj = 200 °C

VDSS-LsDS⋅di/dt
RG,off = 4.2 Ω, VDSmax =

Short circuit data ISC VDD = 470 V, VGS = -5/15 V, tSC = 2 µs, 6500 A
RG,on = 10.5 Ω, Tvj = 200 °C

VDSS-LsDS⋅di/dt
RG,off = 4.2 Ω, VDSmax =

ΔV/Δt = 10 dm³/min, Tf = 60 °C
Thermal resistance, Rth,j-f per MOSFET, 50% water / 50% ethylenglycol, 0.107 0.1183) K/W
junction to cooling fluid2)
Temperature under Tvj,op continuous -40 175 °C
switching conditions operation
extended 2004)
operation
1) At 0h operating time. During inverter operation the value can be lower depending on Tvj, VGS(off), (switching frequency) fsw over lifetime.
For a final assessment of VGS,th Min. value depending on customer application please contact the Infineon sales office for the necessary
technical support by Infineon.
2) Cooler design and flow direction according to application note AN-G2-ASSEMBLY
3) EoL criteria see AQG324, verified by characterization with 4.5 sigma
4) For 100h cumulated over life time

3 Body diode (MOSFET)

Table 7 Maximum rated values
Parameter Symbol Note or test condition Values Unit
Drain-source voltage VDSS continuous 750 V
operation
10h over life time 900
DC body diode forward IF,S Tvj,max = 175 °C, Tf = 65 °C 170 A
current VGS = -5 V
Pulsed body diode current IF,S,pulse verified by design, tp limited by Tvj,max 1240 A

Datasheet 6 Revision 1.00

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FS01MR08A8MA2LBC
HybridPACK™ Drive G2 module
4 Temperature sensor

Table 8 Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Forward voltage VF,SD IF,S = 620 A, VGS = -5 V Tvj = 25 °C 4.64 6.73 V
Tvj = 125 °C 4.25
Tvj = 175 °C 4.09
Tvj = 200 °C 4.04
Peak reverse recovery Irrm IF,S = 620 A, VGS = -5 V, Tvj = 25 °C 117 A
current VR,DS = 470 V
Tvj = 125 °C 133
Tvj = 175 °C 152
Tvj = 200 °C 162
Recovered charge Qrr IF,S = 620 A, VGS = -5 V, Tvj = 25 °C 2.20 µC
VR,DS = 470 V
Tvj = 125 °C 3.60
Tvj = 175 °C 5.00
Tvj = 200 °C 5.70
Reverse recovery energy Erec IF,S = 620 A, VGS = -5 V, Tvj = 25 °C, 0.3 mJ
VR,DS = 470 V -di/dt = 5.4 kA/µs
Tvj = 125 °C, 0.5
-di/dt = 5.6 kA/µs
Tvj = 175 °C, 0.8
-di/dt = 5.7 kA/µs
Tvj = 200 °C, 0.9
-di/dt = 5.8 kA/µs

4 Temperature sensor
Table 9 Characteristic values
Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Transient sense current ITS 10 mA
Forward voltage VTS ITS = 0.2 mA, 2.574 2.624 2.674 V
Tvj = 25 °C
ITS = 0.2 mA, 2.169 2.234 2.299
Tvj = 85 °C

Datasheet 7 Revision 1.00

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HybridPACK™ Drive G2 module
5 Characteristics diagrams

5 Characteristics diagrams
Pressure drop in cooling circuit (typical), Package Maximum allowed drain-source voltage, MOSFET
Δp = f(ΔV/Δt) VDSS = f(Tvj)
fluid = 50% water / 50% ethylenglycol , Tf = 60 °C verified by characterization / design, not by test
150 1000

120 900

90 800

60 700

30 600

0 500
4 5 6 7 8 9 10 11 12 -50 -25 0 25 50 75 100 125 150 175 200

Output characteristic (typical), MOSFET Output characteristic (typical), MOSFET

ID = f(VDS) ID = f(VDS)
VGS = 18 V Tvj = 25 °C
1240 1240

930 1085

620 930

310 775

0 620

-310 465

-620 310

-930 155

-1240 0
-3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 0.0 0.4 0.8 1.2 1.6 2.0

Datasheet 8 Revision 1.00

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FS01MR08A8MA2LBC
HybridPACK™ Drive G2 module
5 Characteristics diagrams

Drain-source on-resistance (typical), MOSFET Drain-source on-resistance (typical), MOSFET

RDS,on = f(Tvj) RDS,on = f(ID)
ID = 620 A, VGS = 18 V VGS = 18 V
2.40 2.40

2.10 2.10

1.80 1.80

1.50 1.50

1.20 1.20

0.90 0.90
25 50 75 100 125 150 175 200 -1240 -620 0 620 1240

Transfer characteristic (typical), MOSFET Gate charge characteristic (typical), MOSFET

ID = f(VGS) VGS = f(QG)
VDS = 20 V VDD = 470 V, Tvj = 25 °C
1240 18

1085 15

930 12

775 9

620 6

465 3

310 0

155 -3

0 -6
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Datasheet 9 Revision 1.00

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FS01MR08A8MA2LBC
HybridPACK™ Drive G2 module
5 Characteristics diagrams

Capacity characteristic (typical), MOSFET Switching losses (typical), MOSFET

C = f(VDS) E = f(ID)
f = 1 MHz, VGS = -5/18 V, Tvj = 25 °C VDS = 470 V, RG,off = 4.2 Ω, RG,on = 10.5 Ω, VGS = -5/18 V
70

100 60

50

10 40

30

1 20

10

0.1 0
0 150 300 450 600 750 0 310 620 930 1240

Switching losses (typical), MOSFET Current slope (typical), MOSFET

E = f(RG) di/dt = f(ID)
ID = 620 A, VDS = 470 V, VGS = -5/18 V VDS = 470 V, RG,off = 4.2 Ω, RG,on = 10.5 Ω, VGS = -5/18 V
150 20

18
125
16

14
100
12

75 10

8
50
6

4
25
2

0 0
0 5 10 15 20 25 30 0 310 620 930 1240

Datasheet 10 Revision 1.00

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FS01MR08A8MA2LBC
HybridPACK™ Drive G2 module
5 Characteristics diagrams

Current slope (typical), MOSFET Voltage slope (typical), MOSFET

di/dt = f(RG) dv/dt = f(ID)
VDS = 470 V, ID = 620 A, VGS = -5/18 V VDS = 470 V, RG,off = 4.2 Ω, RG,on = 10.5 Ω, VGS = -5/18 V
20 12

18
10
16

14
8
12

10 6

8
4
6

4
2
2

0 0
0 5 10 15 20 25 30 0 310 620 930 1240

Voltage slope (typical), MOSFET Reverse bias safe operating area (RBSOA), MOSFET
dv/dt = f(RG) ID = f(VDS)
ID = 620 A, VDS = 470 V, VGS = -5/18 V RG,off = 4.2 Ω, VGS = +18/-5 V, Tvj = 175 °C
(1) for 10h over lifetime
12 1600

10

1200

6 800

400

0 0
0 5 10 15 20 25 30 0 200 400 600 800 1000

Datasheet 11 Revision 1.00

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FS01MR08A8MA2LBC
HybridPACK™ Drive G2 module
5 Characteristics diagrams

Transient thermal impedance (typical), MOSFET Thermal impedance (typical), MOSFET

Zth = f(t) Rth,j-f = f(dv/dt)
ΔV/Δt = 10 dm³/min, fluid = 50% water/50% fluid = 50% water/50% ethylenglycol , Tf = 60 °C
ethylenglycol , Tf = 60 °C
1 0.118

0.116

0.114

0.1 0.112

0.110

0.108

0.01 0.106

0.104

0.102

0.001 0.100
0.001 0.01 0.1 1 10 4 6 8 10 12 14

Forward characteristic body diode (typical), MOSFET Forward characteristic body diode (typical), MOSFET
IF,S = f(VSD) IF,S = f(VSD)
Tvj = 25 °C VGS = -5 V
1240 1240

1085 1085

930 930

775 775

620 620

465 465

310 310

155 155

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6

Datasheet 12 Revision 1.00

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HybridPACK™ Drive G2 module
5 Characteristics diagrams

Switching losses body diode (typical), MOSFET Switching losses body diode (typical), MOSFET
Erec = f(ISD) Erec = f(RG)
Vr = 470 V, RG,on = 10.5 Ω Vr = 470 V, IF,S = 620 A
1.6 1.6

1.3 1.3

1.0 1.0

0.6 0.6

0.3 0.3

0.0 0.0
0 310 620 930 1240 10 14 18 22 26 30

Temperature characteristic (typical), Temperature

sensor
VTS = f(Tvj)
ITS = 0.2 mA
4.00

3.50

3.00

2.50

2.00

1.50
-50 -25 0 25 50 75 100 125

Datasheet 13 Revision 1.00

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FS01MR08A8MA2LBC
HybridPACK™ Drive G2 module
6 Circuit diagram

6 Circuit diagram

P1 P2 P3 TS1+
D1 D3 D5

G1 G3 G5 TS1-
S1.1 S3.1 S5.1 TS2+
S1.2 S3.2 S5.2
U V W
D2 D4 D6
TS2-
G2 G4 G6 TS3+
S2.1 S4.1 S6.1
S2.2 S4.2 S6.2
N1 N2 N3 TS3-

Figure 1

Datasheet 14 Revision 1.00

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FS01MR08A8MA2LBC
HybridPACK™ Drive G2 module
7 Package outlines

7 Package outlines

Drawing: W00202300_07 Acc. to ISO 8015

n4,1 `0,1
B

57,95

36,97
39,97

90,55
31,47
54,7

46,2

4,37

84,3
59,7

7,37

78,8

87,3

92,3
51,7

0
+0
6 - 0,3 HS1 A2 HS3 A3 HS4 A4
A1
D2 D3
d 0,8 A B C D4
9,75 D1 H
5
0 0
2x 2,6
j 1,0 A B C 8
H
(8,5)

15,5

59°
95,
663
9
4x
4x 4 `0,3
j 1,0 A B C
2x
j 1,0 A B C

j n0,3 A B C
4x 8,5 `0,3

66,5

8x
74,1
79,4
82
82,8 Y Y

8x n4,5 `0,15
87 L
90,75
D8 D5
d 0,8 A B C D6
D7 S
6,35 HS8 HS7 HS5
A8 A7 A6 A5
0
46,2

26

1,13

21

49,271

68

78,8

H-H ( 2 : 1 )

6x (heatstaking dome)
L(4:1)
j 0,8 A B C
6x 4,9 `0,2 15,8

A A1 to A8
2x (HS4;HS8)
j 0,4 A B C
j n1,2 A B C
dimensioned for
EJOT Delta PT WN5451 30x10
(valid for PCB 1,6 ±0,16)
6x n3 `0,1

C
(4 ,

S(2:1)
5)

0, 1
(n2,5)

(22,44) `
4 `0,1 4,1
6x (15,7) Y-Y ( 2 : 1 )
j n1,2 A B C principle view
6x 0,1 `0,175
(2,385) rotation bar to
(5,32)

Refered to nearest heatstaking dome

center of powertab

(D1;D3-D5;D7;D8 only).
(9,84)

Dome D2 and D6 without functionality.

(7,6)

Dome positions (6x) for PCB assembly

(4,52)

additionally checked by pin gauge

(6,4)
(15,17) (7,27)

Figure 2

Datasheet 15 Revision 1.00

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FS01MR08A8MA2LBC
HybridPACK™ Drive G2 module
7 Package outlines

Drawing: W00202299_08 Acc. to ISO 8015

6x
6x 14 `0,2 j 0,7 CZ A
(n4,1)
10,1
7,6

j 1,2 A B C B
0

3x 3x
j 1,0 A B C j 1,0 A B C

36,97
40,4

4,37

84,3
25,6

53,6

72,6
21,4
51,7
6x

6,6
0
j 1,0 A B C
N1-N3;P1-P3
6x 1,5 `0,1

22,25

A A1 to A8 A1
A2 A3 A4
N1 P1 N2 P2 N3 P3

0
2,6

95,
6 63

°
59
9

79,4
82

A8 U V W
A5
A7 A6
C
(4,1)

114,25

120,25
3x 1,5 `0,1
3x
3x j 1,0 A B C
j 1,0 A B C
0

20,6

49,271

67,6
26,4

U;V;W
0
7,6

3x
3x 14 `0,2 n6,2 `0,1 j n0,6 CZ A
j n1,2 A B C

Figure 3

Datasheet 16 Revision 1.00

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FS01MR08A8MA2LBC
HybridPACK™ Drive G2 module
7 Package outlines

Drawing: W00201873_05 Acc. to ISO 8015

n(4,1)
B

34,75

26,65

20,35

59,25

67,35
12,25
30,7

32,5

63,3

79,5
14,5

16,3
0
No pin higher than
heatstaking dome

0
A A1 to A8

D4
D2

D6
18,85

G4
S4.1
S4.2

S6.2
G6
S2.2
G2
S2.1

S6.1
95,
663

°
59
9
53,85 TS1+ TS2+ TS3+

S3.2
S1.2

S5.2
S3.1

S5.1
S1.1

G3

G5
G1

63,02 TS1- TS2- TS3-

63,82
D3

65,75

D5
D1

69,85

82

C
(4,1)
0
34,75
30,7
26,65

11,35

1,65

12,25
16,3
20,35

35,65

45,35
49,271

59,25
63,3
67,35

82,65

L ( 4:1 )
All pin positions checked
with pin gauge according
to Application Note

Figure 4

Datasheet 17 Revision 1.00

2024-03-14
FS01MR08A8MA2LBC
HybridPACK™ Drive G2 module
8 Module label code

8 Module label code

Module label code

Code format Data Matrix Barcode Code128
Encoding ASCII text Code Set A
Symbol size 16x16 23 digits
Standard IEC24720 and IEC16022 IEC8859-1

Code content Content Digit Example

Module serial number 1–5 71549
Module material number 6 - 11 142846
Production order number 12 - 19 55054991
Date code (production year) 20 – 21 15
Date code (production week) 22 – 23 30
Example

71549142846550549911530 71549142846550549911530

Packing label code

Code format Barcode Code128
Encoding Code Set A
Symbol size 34 digits
Standard IEC8859-1

Code content Content Identifier Digit Example

Module serial number X 2–9 95056609
Module material number 1T 12 – 19 2X0003E0
Production order number S 21 – 25 754389
Date code (production year) 9D 28 – 31 1139
Date code (production week) Q 33 – 34 15
Example

X950566091T2X0003E0S754389D1139Q15

Figure 5

Datasheet 18 Revision 1.00

2024-03-14
FS01MR08A8MA2LBC
HybridPACK™ Drive G2 module
Revision history

Revision history
Document revision Date of release Description of changes
0.10 2022-04-06 Initial version
0.11 2023-01-19 Target datasheet
0.20 2023-06-20 Preliminary datasheet
1.00 2024-03-14 Final datasheet

Datasheet 19 Revision 1.00

2024-03-14
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