Power Transistors

2SC4152
Silicon NPN triple diffusion planar type
Unit: mm
For high breakdown voltage high-speed switching 10.0±0.2 4.2±0.2

0.7±0.1
5.5±0.2 2.7±0.2

4.2±0.2
■ Features

7.5±0.2
φ 3.1±0.1

16.7±0.3
• High-speed switching
• High collector to base voltage VCBO
• Wide area of safe operation (ASO)
• Satisfactory linearity of forward current transfer ratio hFE 1.4±0.1
1.3±0.2

Solder Dip
• Full-pack package which can be installed to the heat sink with one

14.0±0.5

(4.0)
0.5+0.2
–0.1
screw 0.8±0.1

2.54±0.3
■ Absolute Maximum Ratings TC = 25°C 5.08±0.5

Parameter Symbol Rating Unit 1 : Base

1 2 3 2 : Collector
Collector to base voltage VCBO 1 400 V 3 : Emitter
Collector to emitter voltage VCER 1 400 V EIAJ : SC-67
TO-220F-A1 Package
VCEO 700 V
Emitter to base voltage VEBO 5 V
Peak collector current ICP 1.0 A
Collector current IC 0.3 A
Collector power TC = 25°C PC 20 W
dissipation Ta = 25°C 2
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics TC = 25°C

Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current ICBO VCB = 1 100 V, IE = 0 10 µA
Emitter cutoff current IEBO VEB = 4 V, IC = 0 10 µA
Collector to emitter voltage VCER IC = 1 mA, RBE = 100 Ω 1 400 V
VCEO IC = 1 mA, IB = 0 700 V
Emitter to base voltage VEBO IE = 1 mA, IC = 0 5 V
Forward current transfer ratio hFE VCE = 5 V, IC = 30 mA 10 40
Collector to emitter saturation voltage VCE(sat) IC = 60 mA, IB = 6 mA 2 V
Base to emitter saturation voltage VBE(sat) IC = 60 mA, IB = 6 mA 2 V
Transition frequency fT VCE = 10 V, IC = 30 mA, f = 1 MHz 12 MHz
Collector output capacitance Cob VCB = 100 V, IE = 0, f = 1 MHz 6 pF
Turn-on time ton IC = 0.15 A, IB1 = 15 mA, IB2 = −30 mA, 2 µs
Storage time tstg VCC = 250 V 3 µs
Fall time tf 1 µs

224
Power Transistors 2SC4152

PC  T a IC  VCE VCE(sat)  IC
40 120 100

Collector to emitter saturation voltage VCE(sat) (V)

(1) TC=Ta TC=25˚C IC/IB=10
(2) With a 100 × 100 × 2mm
Collector power dissipation PC (W)

Al heat sink IB=5mA 30

(3) With a 50 × 50 × 2mm 100
4mA
Al heat sink

Collector current IC (A)

30 10
(4) Without heat sink
(PC=2W) 80 3mA
3

(1) 2mA
20 60 1

TC=100˚C
0.3
40
(2) 1mA
25˚C
10 0.1

(3) 20 –25˚C
0.03
(4)
0 0 0.01
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0.001 0.003 0.01 0.03 0.1 0.3 1
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A)

VBE(sat)  IC hFE  IC fT  I C
100 1000 1000
IC/IB=10 VCE=5V VCE=10V
Base to emitter saturation voltage VBE(sat) (V)

f=1MHz
Forward current transfer ratio hFE

TC=25˚C

Transition frequency fT (MHz)

30 300 300

10 100 100
25˚C
TC=100˚C

3 30 30
–25˚C

1 TC=–25˚C 10 10

100˚C
0.3 25˚C 3 3

0.1 1 1
0.001 0.003 0.01 0.03 0.1 0.3 1 0.001 0.003 0.01 0.03 0.1 0.3 1 0.001 0.003 0.01 0.03 0.1 0.3 1
Collector current IC (A) Collector current IC (A) Collector current IC (A)

Cob  VCB ton, tstg, tf  IC Area of safe operation (ASO)

1000 100 10
IE=0 Pulsed tw=1ms Non repetitive pulse
Collector output capacitance Cob (pF)

f=1MHz Duty cycle=1% TC=25˚C

TC=25˚C 30 IC/IB=5 3
300
Switching time ton,tstg,tf (µs)

(2IB1=–IB2)
VCC=250V
Collector current IC (A)

10 1
TC=25˚C t=1ms
100
3 0.3
tstg ton 10ms
30 1 0.1
DC
0.3 tf 0.03
10

0.1 0.01

3
0.03 0.003

1 0.01 0.001
1 3 10 30 100 0 0.2 0.4 0.6 0.8 1 3 10 30 100 300 1000
Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V)

225
2SC4152 Power Transistors

Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit
1.6
Lcoil=200µH
IC/IB=10
1.4
(IB1=–IB2) L coil
TC=25˚C
Collector current IC (A)

1.2
T.U.T IC
ICP IB1
1.0

0.8 Vin –IB2

VCC
0.6

0.4
IC
tW Vclamp
0.2
<1mA
0
0 200 400 600 800 1000 1200 1400 1600
Collector to emitter voltage VCE (V)

Rth(t)  t
10000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
Thermal resistance Rth(t) (˚C/W)

(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
1000

100
(1)

(2)
10

0.1
10–4 10–3 10–2 10–1 1 10 102 103 104
Time t (s)

226
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2001 MAR