2SC4152
2SC4152
2SC4152
2SC4152
Silicon NPN triple diffusion planar type
Unit: mm
For high breakdown voltage high-speed switching 10.0±0.2 4.2±0.2
0.7±0.1
5.5±0.2 2.7±0.2
4.2±0.2
■ Features
7.5±0.2
φ 3.1±0.1
16.7±0.3
• High-speed switching
• High collector to base voltage VCBO
• Wide area of safe operation (ASO)
• Satisfactory linearity of forward current transfer ratio hFE 1.4±0.1
1.3±0.2
Solder Dip
• Full-pack package which can be installed to the heat sink with one
14.0±0.5
(4.0)
0.5+0.2
–0.1
screw 0.8±0.1
2.54±0.3
■ Absolute Maximum Ratings TC = 25°C 5.08±0.5
224
Power Transistors 2SC4152
PC T a IC VCE VCE(sat) IC
40 120 100
(1) 2mA
20 60 1
TC=100˚C
0.3
40
(2) 1mA
25˚C
10 0.1
(3) 20 –25˚C
0.03
(4)
0 0 0.01
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0.001 0.003 0.01 0.03 0.1 0.3 1
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A)
VBE(sat) IC hFE IC fT I C
100 1000 1000
IC/IB=10 VCE=5V VCE=10V
Base to emitter saturation voltage VBE(sat) (V)
f=1MHz
Forward current transfer ratio hFE
TC=25˚C
10 100 100
25˚C
TC=100˚C
3 30 30
–25˚C
1 TC=–25˚C 10 10
100˚C
0.3 25˚C 3 3
0.1 1 1
0.001 0.003 0.01 0.03 0.1 0.3 1 0.001 0.003 0.01 0.03 0.1 0.3 1 0.001 0.003 0.01 0.03 0.1 0.3 1
Collector current IC (A) Collector current IC (A) Collector current IC (A)
(2IB1=–IB2)
VCC=250V
Collector current IC (A)
10 1
TC=25˚C t=1ms
100
3 0.3
tstg ton 10ms
30 1 0.1
DC
0.3 tf 0.03
10
0.1 0.01
3
0.03 0.003
1 0.01 0.001
1 3 10 30 100 0 0.2 0.4 0.6 0.8 1 3 10 30 100 300 1000
Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V)
225
2SC4152 Power Transistors
Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit
1.6
Lcoil=200µH
IC/IB=10
1.4
(IB1=–IB2) L coil
TC=25˚C
Collector current IC (A)
1.2
T.U.T IC
ICP IB1
1.0
0.4
IC
tW Vclamp
0.2
<1mA
0
0 200 400 600 800 1000 1200 1400 1600
Collector to emitter voltage VCE (V)
Rth(t) t
10000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
Thermal resistance Rth(t) (˚C/W)
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
1000
100
(1)
(2)
10
0.1
10–4 10–3 10–2 10–1 1 10 102 103 104
Time t (s)
226
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2001 MAR