2SD1264
2SD1264
2SD1264
2SD1264, 2SD1264A
Silicon NPN triple diffusion planar type
Unit: mm
For low-freauency power amplification 10.0±0.2 4.2±0.2
0.7±0.1
5.5±0.2 2.7±0.2
For TV vertical deflection output
4.2±0.2
Complementary to 2SB0940 and 2SB0940A
7.5±0.2
φ 3.1±0.1
16.7±0.3
■ Features
• High collector to emitter voltage VCEO
1.3±0.2
• Large collector power dissipation PC 1.4±0.1
Solder Dip
14.0±0.5
(4.0)
• Full-pack package which can be installed to the heat sink with one 0.5+0.2
–0.1
0.8±0.1
screw
2.54±0.3
1: Base
Parameter Symbol Rating Unit 2: Collector
1 2 3
Collector to base voltage VCBO 200 V 3: Emitter
EIAJ: SC-67
Collector to 2SD1264 VCEO 150 V TO-220F-A1 Package
emitter voltage 2SD1264A 180
Emitter to base voltage VEBO 6 V
Peak collector current ICP 3 A
Collector current IC 2 A
Collector power TC = 25°C PC 30 W
dissipation Ta = 25°C 2
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
281
2SD1264, 2SD1264A Power Transistors
PC T a IC VCE IC VBE
50 1.2 1.2
(1) TC=Ta TC=25˚C
(2) With a 100 × 100 × 2mm
Collector power dissipation PC (W)
20 3mA
0.4 0.4
2mA
(2)
10
0.2 1mA 0.2
(3)
(4)
0 0 0
0 20 40 60 80 100 120 140 160 0 4 8 12 16 20 24 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)
VCE(sat) IC hFE IC fT I C
10 10000 1000
Collector to emitter saturation voltage VCE(sat) (V)
1 TC=100˚C
300 TC=100˚C 30
25˚C
0.3 100 10
25˚C
–25˚C
–25˚C 30 3
0.1
10 1
0.03
3 0.3
0.01 1 0.1
0.01 0.03 0.1 0.3 1 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A) Collector current IC (A) Collector current IC (A)
3
IC t=0.5ms 102 (1)
Collector current IC (A)
1
5ms
1ms (2)
0.3 10
DC
0.1
1
0.03
0.01
10–1
2SD1264A
2SD1264
0.003
0.001 10–2
1 3 10 30 100 300 1000 10–4 10–3 10–2 10–1 1 10 102 103 104
Collector to emitter voltage VCE (V) Time t (s)
282
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and semiconductors described in this material
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2001 MAR