Power Transistors

2SD1264, 2SD1264A
Silicon NPN triple diffusion planar type
Unit: mm
For low-freauency power amplification 10.0±0.2 4.2±0.2

0.7±0.1
5.5±0.2 2.7±0.2
For TV vertical deflection output

4.2±0.2
Complementary to 2SB0940 and 2SB0940A

7.5±0.2
φ 3.1±0.1

16.7±0.3
■ Features
• High collector to emitter voltage VCEO
1.3±0.2
• Large collector power dissipation PC 1.4±0.1

Solder Dip
14.0±0.5

(4.0)
• Full-pack package which can be installed to the heat sink with one 0.5+0.2
–0.1
0.8±0.1
screw
2.54±0.3

■ Absolute Maximum Ratings TC = 25°C 5.08±0.5

1: Base
Parameter Symbol Rating Unit 2: Collector
1 2 3
Collector to base voltage VCBO 200 V 3: Emitter
EIAJ: SC-67
Collector to 2SD1264 VCEO 150 V TO-220F-A1 Package
emitter voltage 2SD1264A 180
Emitter to base voltage VEBO 6 V
Peak collector current ICP 3 A
Collector current IC 2 A
Collector power TC = 25°C PC 30 W
dissipation Ta = 25°C 2
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics TC = 25°C

Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current ICBO VCB = 200 V, IE = 0 50 µA
Emitter cutoff current IEBO VEB = 4 V, IC = 0 50 µA
Collector to base voltage VCBO IC = 50 µA, IE = 0 200 V
Collector to emitter 2SD1264 VCEO IC = 5 mA, IB = 0 150 V
voltage 2SD1264A 180
Emitter to base voltage VEBO IE = 500 µA, IC = 0 6 V
Forward current transfer ratio hFE1 * VCE = 10 V, IC = 150 mA 60 240
hFE2 VCE = 10 V, IC = 400 mA 50
Base to emitter voltage VBE VCE = 10 V, IC = 400 mA 1 V
Collector to emitter saturation voltage VCE(sat) IC = 500 mA, IB = 50 mA 1 V
Transition frequency fT VCE = 5 V, IC = 0.5 A, f = 1 MHz 20 MHz
Note) *: Rank classification
Rank Q P
hFE1 60 to 140 100 to 240

281
2SD1264, 2SD1264A Power Transistors

PC  T a IC  VCE IC  VBE
50 1.2 1.2
(1) TC=Ta TC=25˚C
(2) With a 100 × 100 × 2mm
Collector power dissipation PC (W)

Al heat sink IB=7mA 25˚C

1.0 1.0
40 (3) With a 50 × 50 × 2mm TC=100˚C –25˚C
6mA

Collector current IC (A)

Collector current IC (A)

Al heat sink
(4) Without heat sink
(PC=2W) 0.8 5mA 0.8
(1)
30
4mA
0.6 0.6

20 3mA

0.4 0.4
2mA
(2)
10
0.2 1mA 0.2
(3)
(4)
0 0 0
0 20 40 60 80 100 120 140 160 0 4 8 12 16 20 24 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat)  IC hFE  IC fT  I C
10 10000 1000
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 VCE=10V VCE=5V

f=1MHz
Forward current transfer ratio hFE

3000 300 TC=25˚C

Transition frequency fT (MHz)

3
1000 100

1 TC=100˚C
300 TC=100˚C 30
25˚C
0.3 100 10
25˚C
–25˚C

–25˚C 30 3
0.1

10 1

0.03
3 0.3

0.01 1 0.1
0.01 0.03 0.1 0.3 1 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

Area of safe operation (ASO) Rth(t)  t

10 103
Non repetitive pulse (1) Without heat sink
ICP TC=25˚C (2) With a 100 × 100 × 2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)

3
IC t=0.5ms 102 (1)
Collector current IC (A)

1
5ms
1ms (2)
0.3 10
DC
0.1

1
0.03

0.01
10–1
2SD1264A
2SD1264

0.003

0.001 10–2
1 3 10 30 100 300 1000 10–4 10–3 10–2 10–1 1 10 102 103 104
Collector to emitter voltage VCE (V) Time t (s)

282
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2001 MAR