W25Q128JV
W25Q128JV
W25Q128JV
3V 128M-BIT
SERIAL FLASH MEMORY WITH
DUAL/QUAD SPI
Table of Contents
1. GENERAL DESCRIPTIONS ............................................................................................................. 4
2. FEATURES ....................................................................................................................................... 4
3. PACKAGE TYPES AND PIN CONFIGURATIONS........................................................................... 5
3.1 Pin Configuration SOIC 208-mil ........................................................................................... 5
3.2 Pad Configuration WSON 6x5-mm/ 8x6-mm ....................................................................... 5
3.3 Pin Description SOIC 208-mil, WSON 6x5-mm / 8x6-mm ................................................... 5
3.4 Pin Configuration SOIC 300-mil ........................................................................................... 6
3.5 Pin Description SOIC 300-mil ............................................................................................... 6
3.6 Ball Configuration TFBGA 8x6-mm (5x5 or 6x4 Ball Array) ................................................. 7
3.7 Ball Description TFBGA 8x6-mm ......................................................................................... 7
4. PIN DESCRIPTIONS ........................................................................................................................ 8
4.1 Chip Select (/CS) .................................................................................................................. 8
4.2 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3) ..................................... 8
4.3 Serial Clock (CLK) ................................................................................................................ 8
4.4 Reset (/RESET) .................................................................................................................... 8
5. BLOCK DIAGRAM ............................................................................................................................ 9
6. FUNCTIONAL DESCRIPTIONS ..................................................................................................... 10
6.1 Standard SPI Instructions ................................................................................................... 10
6.2 Dual SPI Instructions .......................................................................................................... 10
6.3 Quad SPI Instructions ......................................................................................................... 10
6.4 Software Reset & Hardware /RESET pin ........................................................................... 10
6.5 Write Protection .................................................................................................................. 11
6.5.1 Write Protect Features ......................................................................................................... 11
7. STATUS AND CONFIGURATION REGISTERS ............................................................................ 12
7.1 Status Registers ................................................................................................................. 12
7.1.1 Erase/Write In Progress (BUSY) – Status Only ................................................................ 12
7.1.2 Write Enable Latch (WEL) – Status Only .......................................................................... 12
7.1.3 Block Protect Bits (BP2, BP1, BP0) – Volatile/Non-Volatile Writable ................................ 12
7.1.4 Top/Bottom Block Protect (TB) – Volatile/Non-Volatile Writable ....................................... 13
7.1.5 Sector/Block Protect Bit (SEC) – Volatile/Non-Volatile Writable ....................................... 13
7.1.6 Complement Protect (CMP) – Volatile/Non-Volatile Writable ............................................ 13
7.1.7 Status Register Protect (SRL) .............................................................................................. 14
7.1.8 Erase/Program Suspend Status (SUS) – Status Only....................................................... 14
7.1.9 Security Register Lock Bits (LB3, LB2, LB1) – Volatile/Non-Volatile OTP Writable .......... 14
7.1.10 Quad Enable (QE) – Volatile/Non-Volatile Writable ........................................................ 15
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W25Q128JV
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W25Q128JV
1. GENERAL DESCRIPTIONS
The W25Q128JV (128M-bit) Serial Flash memory provides a storage solution for systems with limited
space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash
devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP)
and storing voice, text and data. The device operates on a single 2.7V to 3.6V power supply with current
consumption as low as 1µA for power-down. All devices are offered in space-saving packages.
The W25Q128JV array is organized into 65,536 programmable pages of 256-bytes each. Up to 256 bytes
can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128
(32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q128JV
has 4,096 erasable sectors and 256 erasable blocks respectively. The small 4KB sectors allow for greater
flexibility in applications that require data and parameter storage. (See Figure 2.)
The W25Q128JV supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI: Serial
Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 and I/O3. SPI clock frequencies of W25Q128JV
of up to 133MHz are supported allowing equivalent clock rates of 266MHz (133MHz x 2) for Dual I/O and
532MHz (133MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O. These transfer rates can
outperform standard Asynchronous 8 and 16-bit Parallel Flash memories.
Additionally, the device supports JEDEC standard manufacturer and device ID and SFDP, and a 64-bit
Unique Serial Number and three 256-bytes Security Registers.
2. FEATURES
New Family of SpiFlash Memories Flexible Architecture with 4KB sectors
– W25Q128JV: 128M-bit / 16M-byte – Uniform Sector/Block Erase (4K/32K/64K-Byte)
– Standard SPI: CLK, /CS, DI, DO – Program 1 to 256 byte per programmable page
– Dual SPI: CLK, /CS, IO0, IO1 – Erase/Program Suspend & Resume
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3 Advanced Security Features
– Software & Hardware Reset(1) – Software and Hardware Write-Protect
Highest Performance Serial Flash – Power Supply Lock-Down
– 133MHz Single, Dual/Quad SPI clocks – Special OTP protection
– 266/532MHz equivalent Dual/Quad SPI – Top/Bottom, Complement array protection
– 66MB/S continuous data transfer rate – Individual Block/Sector array protection
– Min. 100K Program-Erase cycles per sector – 64-Bit Unique ID for each device
– More than 20-year data retention – Discoverable Parameters (SFDP) Register
Efficient “Continuous Read” – 3X256-Bytes Security Registers with OTP locks
– Continuous Read with 8/16/32/64-Byte Wrap – Volatile & Non-volatile Status Register Bits
– As few as 8 clocks to address memory Space Efficient Packaging
– Allows true XIP (execute in place) operation – 8-pin SOIC 208-mil
Low Power, Wide Temperature Range – 16-pin SOIC 300-mil (additional /RESET pin)
– Single 2.7 to 3.6V supply – 8-pad WSON 6x5-mm / 8x6-mm
– <1µA Power-down (typ.) – 24-ball TFBGA 8x6-mm (6x4/5x5 ball array)
– -40°C to +85°C operating range – Contact Winbond for KGD and other options
Top
View
/CS 1 8 VCC
DO (IO1) 2 7 IO
3
IO2 3 6 CLK
GND 4 5 DI (IO0)
Figure 1a. W25Q128JV Pin Assignments, 8-pin SOIC 208-mil (Package Code S)
Figure 1b. W25Q128JV Pad Assignments, 8-pad WSON 6x5-mm/ 8x6-mm (Package Code P/E)
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W25Q128JV
Figure 1c. W25Q128JV Pin Assignments, 16-pin SOIC 300-mil (Package Code F)
Figure 1d. W25Q128JV Ball Assignments, 24-ball TFBGA 8x6-mm (Package Code B/C)
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W25Q128JV
4. PIN DESCRIPTIONS
4.1 Chip Select (/CS)
The SPI Chip Select (/CS) pin enables and disables device operation. When /CS is high the device is
deselected and the Serial Data Output (DO, or IO0, IO1, IO2, IO3) pins are at high impedance. When
deselected, the devices power consumption will be at standby levels unless an internal erase, program or
write status register cycle is in progress. When /CS is brought low the device will be selected, power
consumption will increase to active levels and instructions can be written to and data read from the device.
After power-up, /CS must transition from high to low before a new instruction will be accepted. The /CS
input must track the VCC supply level at power-up and power-down (see “Write Protection” and Figure
58). If needed a pull-up resister on the /CS pin can be used to accomplish this.
4.2 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3)
The W25Q128JV supports Standard SPI, Dual SPI and Quad SPI operation. All 8-bit instructions are
shifted into the device through DI (IO0) pin, address and data are shifted in and out of the device through
either DI & DO pins for Standard SPI instructions, IO0 & IO1 pins for Dual SPI instructions, or IO0-IO3
pins for Quad SPI instructions.
Note: Hardware /RESET pin is available on SOIC-16 or TFBGA; please contact Winbond for this package.
5. BLOCK DIAGRAM
xx2F00h xx2FFFh
• Sector 2 (4KB) • 20FF00h 20FFFFh
W25Q128JV
xx2000h xx20FFh • Block 32 (64KB) •
xx1F00h xx1FFFh 200000h 2000FFh
• Sector 1 (4KB) •
1FFF00h 1FFFFFh
xx1000h xx10FFh
• Block 31 (64KB) •
xx0F00h xx0FFFh 1F0000h 1F00FFh
• Sector 0 (4KB) •
xx0000h xx00FFh •
•
•
10FF00h 10FFFFh
• Block 16 (64KB) •
100000h 1000FFh
Status 0FFF00h 0FFFFFh
Register • Block 15 (64KB) •
0F0000h 0F00FFh
•
•
High Voltage
•
Generators
00FF00h 00FFFFh
CLK
• Block 0 (64KB) •
000000h 0000FFh
/CS
Page Address
Latch / Counter Beginning Ending
DI (IO0) SPI Page Address Page Address
Command &
DO (IO1) Control Logic
Column Decode
(IO2) And 256- Byte Page Buffer
Data
(IO3)
Byte Address
Latch / Counter
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W25Q128JV
6. FUNCTIONAL DESCRIPTIONS
Note:
1. Hardware /RESET pin is available on SOIC-16 or TFBGA; please contact Winbond for his package.
2. While a faster /RESET pulse (as short as a few hundred nanoseconds) will often reset the device, a 1us minimum is
recommended to ensure reliable operation.
3. There is an internal pull-up resistor for the dedicated /RESET pin on the SOIC-16 and TFBGA-24 package. If the reset function
is not needed, this pin can be left floating in the system.
Upon power-up or at power-down, the W25Q128JV will maintain a reset condition while VCC is below the
threshold value of VWI, (See Power-up Timing and Voltage Levels and Figure 43). While reset, all
operations are disabled and no instructions are recognized. During power-up and after the VCC voltage
exceeds VWI, all program and erase related instructions are further disabled for a time delay of t PUW . This
includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status
Register instructions. Note that the chip select pin (/CS) must track the VCC supply level at power-up until
the VCC-min level and tVSL time delay is reached, and it must also track the VCC supply level at power-
down to prevent adverse command sequence. If needed a pull-up resister on /CS can be used to
accomplish this.
After power-up the device is automatically placed in a write-disabled state with the Status Register Write
Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Page Program, Sector
Erase, Block Erase, Chip Erase or Write Status Register instruction will be accepted. After completing a
program, erase or write instruction the Write Enable Latch (WEL) is automatically cleared to a write-
disabled state of 0.
Software controlled write protection is facilitated using the Write Status Register instruction and setting the
Status Register Protect (SRL) and Block Protect (CMP, SEC, TB, BP[2:0]) bits. These settings allow a
portion or the entire memory array to be configured as read only.
The W25Q128JV also provides another Write Protect method using the Individual Block Locks. Each
64KB block (except the top and bottom blocks, total of 126 blocks) and each 4KB sector within the
top/bottom blocks (total of 32 sectors) are equipped with an Individual Block Lock bit. When the lock bit is
0, the corresponding sector or block can be erased or programmed; when the lock bit is set to 1, Erase or
Program commands issued to the corresponding sector or block will be ignored. When the device is
powered on, all Individual Block Lock bits will be 1, so the entire memory array is protected from
Erase/Program. An “Individual Block Unlock (39h)” instruction must be issued to unlock any specific sector
or block.
The WPS bit in Status Register-3 is used to decide which Write Protect scheme should be used. When
WPS=0 (factory default), the device will only utilize CMP, SEC, TB, BP[2:0] bits to protect specific areas of
the array; when WPS=1, the device will utilize the Individual Block Locks for write protection.
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W25Q128JV
S7 S6 S5 S4 S3 S2 S1 S0
Reserved
SECT OR PROTECT
(non-volatile)
(non volatile)
TOP/BOTTOM PROTECT
(non-volatile)
(non volatile)
BLOCK PROTECT BIT S
(non-volatile)
(non volatile)
WRITE ENABLE LAT CH
ERASE/WRITE IN PROGRESS
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W25Q128JV
Note: Please contact Winbond for details regarding the special instruction sequence.
Suspend Status
(Status- Only)
Complement Protect
( Volatile/Non- Volatile Writable)
Reserved
Quad Enable
( Volatile/Non- Volatile Writable)
Status Register Lock
( Volatile/Non- Volatile Writable)
7.1.9 Security Register Lock Bits (LB3, LB2, LB1) – Volatile/Non-Volatile OTP Writable
The Security Register Lock Bits (LB3, LB2, LB1) are non-volatile One Time Program (OTP) bits in Status
Register (S13, S12, S11) that provide the write protect control and status to the Security Registers. The
default state of LB3-1 is 0, Security Registers are unlocked. LB3-1 can be set to 1 individually using the
Write Status Register instruction. LB3-1 are One Time Programmable (OTP), once it’s set to 1, the
corresponding 256-Byte Security Register will become read-only permanently.
Note: QE bit is set to a 0 state, factory default for part numbers with ordering options “IM; please see
W25Q128JV-DTR data sheet.
Re served
Re served
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W25Q128JV
Notes:
1. X = don’t care
2. L = Lower; U = Upper
3. If any Erase or Program command specifies a memory region that contains protected data portion, this
command will be ignored.
Notes:
1. X = don’t care
2. L = Lower; U = Upper
3. If any Erase or Program command specifies a memory region that contains protected data portion, this
command will be ignored.
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W25Q128JV
Sector 15 (4KB)
Block 255
Sector 14 (4KB)
(64KB)
Sector 1 (4KB)
Sector 0 (4KB)
Notes:
1. Individual Block/Sector protection is only valid when WPS=1.
2. All individual block/sector lock bits are set to 1 by default after power up, all memory array is protected.
8. INSTRUCTIONS
The Standard/Dual/Quad SPI instruction set of the W25Q128JV consists of 47 basic instructions that are
fully controlled through the SPI bus (see Instruction Set Table1-2). Instructions are initiated with the falling
edge of Chip Select (/CS). The first byte of data clocked into the DI input provides the instruction code.
Data on the DI input is sampled on the rising edge of clock with most significant bit (MSB) first.
Instructions vary in length from a single byte to several bytes and may be followed by address bytes, data
bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed with the
rising edge of edge /CS. Clock relative timing diagrams for each instruction are included in Figures 5
through 57. All read instructions can be completed after any clocked bit. However, all instructions that
Write, Program or Erase must complete on a byte boundary (/CS driven high after a full 8-bits have been
clocked) otherwise the instruction will be ignored. This feature further protects the device from inadvertent
writes. Additionally, while the memory is being programmed or erased, or when the Status Register is
being written, all instructions except for Read Status Register will be ignored until the program or erase
cycle has completed.
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W25Q128JV
Number of Clock(1-1-1) 8 8 8 8 8 8 8
Write Enable 06h
Volatile SR Write Enable 50h
Write Disable 04h
Release Power-down / ID ABh Dummy Dummy Dummy (ID7-ID0)(2)
Manufacturer/Device ID 90h Dummy Dummy 00h (MF7-MF0) (ID7-ID0)
JEDEC ID 9Fh (MF7-MF0) (ID15-ID8) (ID7-ID0)
Read Unique ID 4Bh Dummy Dummy Dummy Dummy (UID63-0)
Read Data 03h A23-A16 A15-A8 A7-A0 (D7-D0)
Fast Read 0Bh A23-A16 A15-A8 A7-A0 Dummy (D7-D0)
Page Program 02h A23-A16 A15-A8 A7-A0 D7-D0 D7-D0(3)
Sector Erase (4KB) 20h A23-A16 A15-A8 A7-A0
Block Erase (32KB) 52h A23-A16 A15-A8 A7-A0
Block Erase (64KB) D8h A23-A16 A15-A8 A7-A0
Chip Erase C7h/60h
Read Status Register-1 05h (S7-S0)(2)
(4)
Write Status Register-1 01h (S7-S0)(4)
Read Status Register-2 35h (S15-S8)(2)
Write Status Register-2 31h (S15-S8)
Read Status Register-3 15h (S23-S16)(2)
Write Status Register-3 11h (S23-S16)
Read SFDP Register 5Ah 00 00 A7-A0 Dummy (D7-D0)
Erase Security Register(5) 44h A23-A16 A15-A8 A7-A0
Program Security Register(5) 42h A23-A16 A15-A8 A7-A0 D7-D0 D7-D0(3)
Read Security Register(5) 48h A23-A16 A15-A8 A7-A0 Dummy (D7-D0)
Global Block Lock 7Eh
Global Block Unlock 98h
Read Block Lock 3Dh A23-A16 A15-A8 A7-A0 (L7-L0)
Individual Block Lock 36h A23-A16 A15-A8 A7-A0
Individual Block Unlock 39h A23-A16 A15-A8 A7-A0
Erase / Program Suspend 75h
Erase / Program Resume 7Ah
Power-down B9h
Enable Reset 66h
Reset Device 99h
Number of Clock(1-2-2) 8 4 4 4 4 4 4 4 4
Number of Clock(1-1-4) 8 8 8 8 2 2 2 2 2
Quad Input Page Program 32h A23-A16 A15-A8 A7-A0 (D7-D0) (9)
(D7-D0)(3)
…
Fast Read Quad Output 6Bh A23-A16 A15-A8 A7-A0 Dummy Dummy Dummy Dummy (D7-D0)(10)
(8) (8) (8)
Number of Clock(1-4-4) 8 2 2 2 2 2 2 2 2
Mftr./Device ID Quad I/O 94h A23-A16 A15-A8 00 Dummy(11) Dummy Dummy (MF7-MF0) (ID7-ID0)
Fast Read Quad I/O EBh A23-A16 A15-A8 A7-A0 Dummy(11) Dummy Dummy (D7-D0)
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data
output from the device on either 1, 2 or 4 IO pins.
2. The Status Register contents and Device ID will repeat continuously until /CS terminates the instruction.
3. At least one byte of data input is required for Page Program, Quad Page Program and Program Security
Registers, up to 256 bytes of data input. If more than 256 bytes of data are sent to the device, the
addressing will wrap to the beginning of the page and overwrite previously sent data.
4. Write Status Register-1 (01h) can also be used to program Status Register-1&2, see section 8.2.5.
5. Security Register Address:
Security Register 1: A23-16 = 00h; A15-8 = 10h; A7-0 = byte address
Security Register 2: A23-16 = 00h; A15-8 = 20h; A7-0 = byte address
Security Register 3: A23-16 = 00h; A15-8 = 30h; A7-0 = byte address
6. Dual SPI address input format:
IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
7. Dual SPI data output format:
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
8. Quad SPI address input format: Set Burst with Wrap input format:
IO0 = A20, A16, A12, A8, A4, A0, M4, M0 IO0 = x, x, x, x, x, x, W4, x
IO1 = A21, A17, A13, A9, A5, A1, M5, M1 IO1 = x, x, x, x, x, x, W5, x
IO2 = A22, A18, A14, A10, A6, A2, M6, M2 IO2 = x, x, x, x, x, x, W6, x
IO3 = A23, A19, A15, A11, A7, A3, M7, M3 IO3 = x, x, x, x, x, x, x, x
9. Quad SPI data input/output format:
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3, …..)
10. Fast Read Quad I/O data output format:
IO0 = (x, x, x, x, D4, D0, D4, D0)
IO1 = (x, x, x, x, D5, D1, D5, D1)
IO2 = (x, x, x, x, D6, D2, D6, D2)
IO3 = (x, x, x, x, D7, D3, D7, D3)
11. The first dummy is M7-M0 should be set to FFh
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W25Q128JV
/CS
Mode 3 0 1 2 3 4 5 6 7 Mode 3
CLK Mode 0 Mode 0
Instruction (06h)
DI
(IO0)
DO High Impedance
(IO1)
/CS
Mode 3 0 1 2 3 4 5 6 7 Mode 3
CLK Mode 0 Mode 0
Instruction (50h)
DI
(IO0)
DO High Impedance
(IO1)
Figure 6. Write Enable for Volatile Status Register Instruction for SPI Mode
/CS
Mode 3 0 1 2 3 4 5 6 7 Mode 3
CLK Mode 0 Mode 0
Instruction (04h)
DI
(IO0)
DO High Impedance
(IO1)
8.2.4 Read Status Register-1 (05h), Status Register-2 (35h) & Status Register-3 (15h)
The Read Status Register instructions allow the 8-bit Status Registers to be read. The instruction is
entered by driving /CS low and shifting the instruction code “05h” for Status Register-1, “35h” for Status
Register-2 or “15h” for Status Register-3 into the DI pin on the rising edge of CLK. The status register bits
are then shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB) first as shown
in Figure 8. Refer to section 7.1 for Status Register descriptions.
The Read Status Register instruction may be used at any time, even while a Program, Erase or Write
Status Register cycle is in progress. This allows the BUSY status bit to be checked to determine when the
cycle is complete and if the device can accept another instruction. The Status Register can be read
continuously, as shown in Figure 8. The instruction is completed by driving /CS high.
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK Mode 0
Instruction (05h/35h/15h)
DI
(IO0)
Status Register-1/2/3 out Status Register-1/2/3 out
DO High Impedance
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7
(IO1)
* = MSB * *
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W25Q128JV
8.2.5 Write Status Register-1 (01h), Status Register-2 (31h) & Status Register-3 (11h)
The Write Status Register instruction allows the Status Registers to be written. The writable Status
Register bits include: SEC, TB, BP[2:0] in Status Register-1; CMP, LB[3:1], QE, SRL in Status Register-2;
DRV1, DRV0, WPS in Status Register-3. All other Status Register bit locations are read-only and will not
be affected by the Write Status Register instruction. LB[3:1] are non-volatile OTP bits, once it is set to 1, it
cannot be cleared to 0.
To write non-volatile Status Register bits, a standard Write Enable (06h) instruction must previously have
been executed for the device to accept the Write Status Register instruction (Status Register bit WEL
must equal 1). Once write enabled, the instruction is entered by driving /CS low, sending the instruction
code “01h/31h/11h”, and then writing the status register data byte as illustrated in Figure 9a.
To write volatile Status Register bits, a Write Enable for Volatile Status Register (50h) instruction must
have been executed prior to the Write Status Register instruction (Status Register bit WEL remains 0).
However, SRL and LB[3:1] cannot be changed from “1” to “0” because of the OTP protection for these
bits. Upon power off or the execution of a Software/Hardware Reset, the volatile Status Register bit values
will be lost, and the non-volatile Status Register bit values will be restored.
During non-volatile Status Register write operation (06h combined with 01h/31h/11h), after /CS is driven
high, the self-timed Write Status Register cycle will commence for a time duration of t W (See AC
Characteristics). While the Write Status Register cycle is in progress, the Read Status Register instruction
may still be accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status
Register cycle and a 0 when the cycle is finished and ready to accept other instructions again. After the
Write Status Register cycle has finished, the Write Enable Latch (WEL) bit in the Status Register will be
cleared to 0.
During volatile Status Register write operation (50h combined with 01h/31h/11h), after /CS is driven high,
the Status Register bits will be refreshed to the new values within the time period of t SHSL2 (See AC
Characteristics). BUSY bit will remain 0 during the Status Register bit refresh period.
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Mode 3
CLK Mode 0 Mode 0
Instruction
Register-1/2/3 in
(01h/31h/11h)
DI
7 6 5 4 3 2 1 0
(IO0)
*
DO High Impedance
(IO1)
* = MSB
Figure 9a. Write Status Register-1/2/3 Instruction
The W25Q128JV is also backward compatible to Winbond’s previous generations of serial flash
memories, in which the Status Register-1&2 can be written using a single “Write Status Register-1 (01h)”
command. To complete the Write Status Register-1&2 instruction, the /CS pin must be driven high after
the sixteenth bit of data that is clocked in as shown in Figure 9b. If /CS is driven high after the eighth
clock, the Write Status Register-1 (01h) instruction will only program the Status Register-1, the Status
Register-2 will not be affected (Previous generations will clear CMP and QE bits).
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Mode 3
CLK Mode 0 Mode 0
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W25Q128JV
The Read Data instruction sequence is shown in Figure 14. If a Read Data instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of f R
(see AC Electrical Characteristics).
The Read Data (03h) instruction is only supported in Standard SPI mode.
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39
CLK Mode 0
* = MSB *
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31
CLK Mode 0
* = MSB
/CS
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
CLK
Dummy Clocks
DI
0
(IO0)
Data Out 1 Data Out 2
DO High Impedance
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7
(IO1)
* *
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W25Q128JV
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in Figure 18. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy clocks is
“don’t care”. However, the IO0 pin should be high-impedance prior to the falling edge of the first data out
clock.
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31
CLK Mode 0
/CS
* = MSB
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
CLK
IO0 switches from
Dummy Clocks Input to Output
DI
0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6
(IO0)
DO High Impedance
7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7
(IO1)
* Data Out 1 * Data Out 2 * Data Out 3 * Data Out 4
The Fast Read Quad Output instruction can operate at the highest possible frequency of F R (see AC
Electrical Characteristics). This is accomplished by adding eight “dummy” clocks after the 24-bit address
as shown in Figure 20. The dummy clocks allow the device's internal circuits additional time for setting up
the initial address. The input data during the dummy clocks is “don’t care”. However, the IO pins should be
high-impedance prior to the falling edge of the first data out clock.
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31
CLK Mode 0
IO0 23 22 21 3 2 1 0
High Impedance *
IO1
High Impedance
IO2
High Impedance
IO3
* = MSB
/CS
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
CLK
IO0 switches from
Dummy Clocks Input to Output
IO0 0 4 0 4 0 4 0 4 0 4
High Impedance
IO1 5 1 5 1 5 1 5 1 5
High Impedance
IO2 6 2 6 2 6 2 6 2 6
High Impedance
IO3 7 3 7 3 7 3 7 3 7
- 29 -
W25Q128JV
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK Mode 0
DO
23 21 19 17 15 13 11 9 7 5 3 1 7 5 3 1
(IO1)
* *
* = MSB
/CS
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
CLK
IOs switch from
Input to Output
DI
0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6
(IO0)
DO
1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7
(IO1)
* Byte 1 * Byte 2 * Byte 3 * Byte 4
Figure 22a. Fast Read Dual I/O Instruction (M7-M0 should be set to Fxh)
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK Mode 0
IOs switch from
Instruction (EBh) A23-16 A15-8 A7-0 M7-0 Dummy Dummy
Input to Output
IO0 20 16 12 8 4 0 4 0 4 0 4 0 4
IO1 21 17 13 9 5 1 5 1 5 1 5 1 5
IO2 22 18 14 10 6 2 6 2 6 2 6 2 6
IO3 23 19 15 11 7 3 7 3 7 3 7 3 7
Figure 24a. Fast Read Quad I/O Instruction (M7-M0 should be set to Fxh)
- 31 -
W25Q128JV
Fast Read Quad I/O with “8/16/32/64-Byte Wrap Around” in Standard SPI mode
The Fast Read Quad I/O instruction can also be used to access a specific portion within a page by issuing
a “Set Burst with Wrap” (77h) command prior to EBh. The “Set Burst with Wrap” (77h) command can
either enable or disable the “Wrap Around” feature for the following EBh commands. When “Wrap
Around” is enabled, the data being accessed can be limited to either an 8, 16, 32 or 64-byte section of a
256-byte page. The output data starts at the initial address specified in the instruction, once it reaches the
ending boundary of the 8/16/32/64-byte section, the output will wrap around to the beginning boundary
automatically until /CS is pulled high to terminate the command.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then
fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read
commands.
The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to
enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the wrap
around section within a page. Refer to section 8.2.37 for detail descriptions.
W4 = 0 W4 =1 (DEFAULT)
W6, W5
Wrap Around Wrap Length Wrap Around Wrap Length
0 0 Yes 8-byte No N/A
0 1 Yes 16-byte No N/A
1 0 Yes 32-byte No N/A
1 1 Yes 64-byte No N/A
Once W6-4 is set by a Set Burst with Wrap instruction, all the following “Fast Read Quad I/O” instruction
will use the W6-4 setting to access the 8/16/32/64-byte section within any page. To exit the “Wrap Around”
function and return to normal read operation, another Set Burst with Wrap instruction should be issued to
set W4 = 1. The default value of W4 upon power on or after a software/hardware reset is 1.
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Mode 3
CLK Mode 0 Mode 0
don't don't don't
Instruction (77h) care care care
Wrap Bit
IO0 X X X X X X w4 X
IO1 X X X X X X w5 X
IO2 X X X X X X w6 X
IO3 X X X X X X X X
- 33 -
W25Q128JV
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address bits)
should be set to 0. If the last address byte is not zero, and the number of clocks exceeds the remaining
page length, the addressing will wrap to the beginning of the page. In some cases, less than 256 bytes (a
partial page) can be programmed without having any effect on other bytes within the same page. One
condition to perform a partial page program is that the number of clocks cannot exceed the remaining
page length. If more than 256 bytes are sent to the device the addressing will wrap to the beginning of the
page and overwrite previously sent data.
As with the write and erase instructions, the /CS pin must be driven high after the eighth bit of the last byte
has been latched. If this is not done the Page Program instruction will not be executed. After /CS is driven
high, the self-timed Page Program instruction will commence for a time duration of tpp (See AC
Characteristics). While the Page Program cycle is in progress, the Read Status Register instruction may
still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Page Program
cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions
again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit in the Status Register
is cleared to 0. The Page Program instruction will not be executed if the addressed page is protected by
the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits or the Individual Block/Sector Locks.
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39
CLK Mode 0
2073
2074
2075
2076
2077
2078
2079
39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 Mode 3
CLK Mode 0
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31
CLK Mode 0
IO0 23 22 21 3 2 1 0
*
IO1
IO2
IO3
* = MSB
/CS
536
537
538
539
540
541
542
543
31 32 33 34 35 36 37 Mode 3
CLK Mode 0
Byte Byte Byte Byte
Byte 1 Byte 2 Byte 3
253 254 255 256
IO0 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0
IO1 5 1 5 1 5 1 5 1 5 1 5 1 5 1
IO2 6 2 6 2 6 2 6 2 6 2 6 2 6 2
IO3 7 3 7 3 7 3 7 3 7 3 7 3 7 3
* * * * * * *
Figure 30. Quad Input Page Program Instruction
- 35 -
W25Q128JV
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB,
BP2, BP1, and BP0) bits or the Individual Block/Sector Locks.
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 29 30 31 Mode 3
CLK Mode 0 Mode 0
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction
will commence for a time duration of tBE1 (See AC Characteristics). While the Block Erase cycle is in
progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY
bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the
device is ready to accept other instructions again. After the Block Erase cycle has finished the Write
Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be
executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0)
bits or the Individual Block/Sector Locks.
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 29 30 31 Mode 3
CLK Mode 0 Mode 0
- 37 -
W25Q128JV
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction
will commence for a time duration of tBE (See AC Characteristics). While the Block Erase cycle is in
progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY
bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the
device is ready to accept other instructions again. After the Block Erase cycle has finished the Write
Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be
executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0)
bits or the Individual Block/Sector Locks.
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 29 30 31 Mode 3
CLK Mode 0 Mode 0
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase
instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will
commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in progress,
the Read Status Register instruction may still be accessed to check the status of the BUSY bit. The BUSY
bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is ready to accept
other instructions again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit in the
Status Register is cleared to 0. The Chip Erase instruction will not be executed if any memory region is
protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits or the Individual Block/Sector
Locks.
/CS
Mode 3 0 1 2 3 4 5 6 7 Mode 3
CLK Mode 0 Mode 0
Instruction (C7h/60h)
DI
(IO0)
DO High Impedance
(IO1)
- 39 -
W25Q128JV
The Write Status Register instruction (01h) and Erase instructions (20h, 52h, D8h, C7h, 60h, 44h) are not
allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block erase operation. If
written during the Chip Erase operation, the Erase Suspend instruction is ignored. The Write Status
Register instruction (01h) and Program instructions (02h, 32h, 42h) are not allowed during Program
Suspend. Program Suspend is valid only during the Page Program or Quad Page Program operation.
The Erase/Program Suspend instruction “75h” will be accepted by the device only if the SUS bit in the
Status Register equals to 0 and the BUSY bit equals to 1 while a Sector or Block Erase or a Page
Program operation is on-going. If the SUS bit equals to 1 or the BUSY bit equals to 0, the Suspend
instruction will be ignored by the device. A maximum of time of “tSUS” (See AC Characteristics) is required
to suspend the erase or program operation. The BUSY bit in the Status Register will be cleared from 1 to
0 within “tSUS” and the SUS bit in the Status Register will be set from 0 to 1 immediately after
Erase/Program Suspend. For a previously resumed Erase/Program operation, it is also required that the
Suspend instruction “75h” is not issued earlier than a minimum of time of “t SUS” following the preceding
Resume instruction “7Ah”.
Unexpected power off during the Erase/Program suspend state will reset the device and release the
suspend state. SUS bit in the Status Register will also reset to 0. The data within the page, sector or block
that was being suspended may become corrupted. It is recommended for the user to implement system
design techniques against the accidental power interruption and preserve data integrity during
erase/program suspend state.
/CS
tSUS
Mode 3 0 1 2 3 4 5 6 7 Mode 3
CLK Mode 0 Mode 0
Instruction (75h)
DI
(IO0)
DO High Impedance
(IO1)
Accept instructions
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be
issued within a minimum of time of “tSUS” following a previous Resume instruction.
/CS
Mode 3 0 1 2 3 4 5 6 7 Mode 3
CLK Mode 0 Mode 0
Instruction (7Ah)
DI
(IO0)
Resume previously
suspended Program or
Erase
- 41 -
W25Q128JV
/CS
tDP
Mode 3 0 1 2 3 4 5 6 7 Mode 3
CLK Mode 0 Mode 0
Instruction (B9h)
DI
(IO0)
/CS
tRES1
Mode 3 0 1 2 3 4 5 6 7 Mode 3
CLK Mode 0 Mode 0
Instruction (ABh)
DI
(IO0)
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 29 30 31 32 33 34 35 36 37 38 Mode 3
CLK Mode 0 Mode 0
- 43 -
W25Q128JV
The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device ID
instruction. The instruction is initiated by driving the /CS pin low and shifting the instruction code “90h”
followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Winbond (EFh)
and the Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first as shown
in Figure 39. The Device ID values for the W25Q128JV are listed in Manufacturer and Device
Identification table. The instruction is completed by driving /CS high.
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31
CLK Mode 0
* = MSB
/CS
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 Mode 3
CLK Mode 0
DI
0
(IO0)
DO
7 6 5 4 3 2 1 0
(IO1)
Manufacturer ID (EFh) * Device ID
The Read Manufacturer / Device ID Dual I/O instruction is similar to the Fast Read Dual I/O instruction.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “92h” followed by a
24-bit address (A23-A0) of 000000h, but with the capability to input the Address bits two bits per clock.
After which, the Manufacturer ID for Winbond (EFh) and the Device ID are shifted out 2 bits per clock on
the falling edge of CLK with most significant bits (MSB) first as shown in Figure 40. The Device ID values
for the W25Q128JV are listed in Manufacturer and Device Identification table. The Manufacturer and
Device IDs can be read continuously, alternating from one to the other. The instruction is completed by
driving /CS high.
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK Mode 0
DO High Impedance
7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1
(IO1)
* = MSB * * * *
/CS
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 Mode 3
CLK Mode 0
IOs switch from
Input to Output
DI
0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0
(IO0)
DO
1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1
(IO1)
* MFR ID * Device ID * MFR ID
(repeat)
* Device ID
(repeat)
Note:
The “Continuous Read Mode” bits M(7-0) must be set to Fxh to be compatible with Fast Read Dual I/O instruction.
- 45 -
W25Q128JV
The Read Manufacturer / Device ID Quad I/O instruction is similar to the Fast Read Quad I/O instruction.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “94h” followed by a
four clock dummy cycles and then a 24-bit address (A23-A0) of 000000h, but with the capability to input
the Address bits four bits per clock. After which, the Manufacturer ID for Winbond (EFh) and the Device ID
are shifted out four bits per clock on the falling edge of CLK with most significant bit (MSB) first as shown
in Figure 41. The Device ID values for the W25Q128JV are listed in Manufacturer and Device
Identification table. The Manufacturer and Device IDs can be read continuously, alternating from one to
the other. The instruction is completed by driving /CS high.
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK Mode 0
A7-0 IOs switch from
Instruction (94h) A23-16 A15-8
(00h)
M7-0 Dummy Dummy
Input to Output
IO0 4 0 4 0 4 0 4 0 4 0 4 0
High Impedance
IO1 5 1 5 1 5 1 5 1 5 1 5 1
High Impedance
IO2 6 2 6 2 6 2 6 2 6 2 6 2
High Impedance
IO3 7 3 7 3 7 3 7 3 7 3 7 3
MFR ID Device ID
/CS
23 24 25 26 27 28 29 30 Mode 3
CLK Mode 0
IO0 0 4 0 4 0 4 0 4 0
IO1 1 5 1 5 1 5 1 5 1
IO2 2 6 2 6 2 6 2 6 2
IO3 3 7 3 7 3 7 3 7 3
MFR ID Device ID MFR ID Device ID
(repeat) (repeat) (repeat) (repeat)
Note:
The “Continuous Read Mode” bits M(7-0) must be set to Fxh to be compatible with Fast Read Quad I/O instruction.
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK Mode 0
DO High Impedance
(IO1)
/CS
100
101
102
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Mode 3
CLK Mode 0
DO High Impedance
63 62 61 2 1 0
(IO1)
* = MSB * 64-bit Unique Serial Number
- 47 -
W25Q128JV
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
CLK Mode 0
Instruction (9Fh)
DI
(IO0)
Manufacturer ID (EFh)
DO High Impedance
(IO1)
* = MSB
/CS
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Mode 3
CLK Mode 0
DI
(IO0)
Memory Type ID15-8 Capacity ID7-0
DO
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
(IO1)
* *
The Read SFDP instruction is initiated by driving the /CS pin low and shifting the instruction code “5Ah”
followed by a 24-bit address (A23-A0)(1) into the DI pin. Eight “dummy” clocks are also required before the
SFDP register contents are shifted out on the falling edge of the 40th CLK with most significant bit (MSB)
first as shown in Figure 44. For SFDP register values and descriptions, please refer to the Winbond
Application Note for SFDP Definition Table.
Note 1: A23-A8 = 0; A7-A0 are used to define the starting byte address for the 256-Byte SFDP Register.
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31
CLK Mode 0
/CS
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
CLK
Dummy Byte
DI
0 7 6 5 4 3 2 1 0
(IO0)
Data Out 1 Data Out 2
DO High Impedance
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7
(IO1)
= MSB
* * *
- 49 -
W25Q128JV
The Erase Security Register instruction sequence is shown in Figure 45. The /CS pin must be driven high
after the eighth bit of the last byte has been latched. If this is not done the instruction will not be executed.
After /CS is driven high, the self-timed Erase Security Register operation will commence for a time
duration of tSE (See AC Characteristics). While the Erase Security Register cycle is in progress, the Read
Status Register instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is
a 1 during the erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept
other instructions again. After the Erase Security Register cycle has finished the Write Enable Latch
(WEL) bit in the Status Register is cleared to 0. The Security Register Lock Bits (LB3-1) in the Status
Register-2 can be used to OTP protect the security registers. Once a lock bit is set to 1, the corresponding
security register will be permanently locked, Erase Security Register instruction to that register will be
ignored (Refer to section 7.1.9 for detail descriptions).
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 29 30 31 Mode 3
CLK Mode 0 Mode 0
The Program Security Register instruction sequence is shown in Figure 46. The Security Register Lock
Bits (LB3-1) in the Status Register-2 can be used to OTP protect the security registers. Once a lock bit is
set to 1, the corresponding security register will be permanently locked, Program Security Register
instruction to that register will be ignored (See 7.1.9 for detail descriptions).
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39
CLK Mode 0
2073
2074
2075
2076
2077
2078
2079
39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 Mode 3
CLK Mode 0
- 51 -
W25Q128JV
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31
CLK Mode 0
* = MSB
/CS
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
CLK
Dummy Byte
DI
0 7 6 5 4 3 2 1 0
(IO0)
Data Out 1 Data Out 2
DO High Impedance
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7
(IO1)
* *
To lock a specific block or sector as illustrated in Figure 4d, an Individual Block/Sector Lock command
must be issued by driving /CS low, shifting the instruction code “36h” into the Data Input (DI) pin on the
rising edge of CLK, followed by a 24-bit address and then driving /CS high. A Write Enable instruction
must be executed before the device will accept the Individual Block/Sector Lock Instruction (Status
Register bit WEL= 1).
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 29 30 31 Mode 3
CLK Mode 0 Mode 0
- 53 -
W25Q128JV
To unlock a specific block or sector as illustrated in Figure 4d, an Individual Block/Sector Unlock
command must be issued by driving /CS low, shifting the instruction code “39h” into the Data Input (DI) pin
on the rising edge of CLK, followed by a 24-bit address and then driving /CS high. A Write Enable
instruction must be executed before the device will accept the Individual Block/Sector Unlock Instruction
(Status Register bit WEL= 1).
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 29 30 31 Mode 3
CLK Mode 0 Mode 0
To read out the lock bit value of a specific block or sector as illustrated in Figure 4d, a Read Block/Sector
Lock command must be issued by driving /CS low, shifting the instruction code “3Dh” into the Data Input
(DI) pin on the rising edge of CLK, followed by a 24-bit address. The Block/Sector Lock bit value will be
shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB) first as shown in Figure
55. If the least significant bit (LSB) is 1, the corresponding block/sector is locked; if LSB=0, the
corresponding block/sector is unlocked, Erase/Program operation can be performed.
/CS
Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 Mode 3
CLK Mode 0 Mode 0
* = MSB *
- 55 -
W25Q128JV
/CS
Mode 3 0 1 2 3 4 5 6 7 Mode 3
CLK Mode 0 Mode 0
Instruction (7Eh)
DI
(IO0)
DO High Impedance
(IO1)
/CS
Mode 3 0 1 2 3 4 5 6 7 Mode 3
CLK Mode 0 Mode 0
Instruction (98h)
DI
(IO0)
DO High Impedance
(IO1)
“Enable Reset (66h)” and “Reset (99h)” instructions can be issued in SPI. To avoid accidental reset, both
instructions must be issued in sequence. Any other commands other than “Reset (99h)” after the “Enable
Reset (66h)” command will disable the “Reset Enable” state. A new sequence of “Enable Reset (66h)” and
“Reset (99h)” is needed to reset the device. Once the Reset command is accepted by the device, the
device will take approximately tRST=30us to reset. During this period, no command will be accepted.
Data corruption may happen if there is an on-going or suspended internal Erase or Program operation
when Reset command sequence is accepted by the device. It is recommended to check the BUSY bit and
the SUS bit in Status Register before issuing the Reset command sequence.
/CS
DO High Impedance
(IO1)
- 57 -
W25Q128JV
9. ELECTRICAL CHARACTERISTICS
Notes:
1. This device has been designed and tested for the specified operation ranges. Proper operation outside
of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.
Exposure beyond absolute maximum ratings may cause permanent damage.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the
European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
3. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
Note:
1. These parameters are characterized only.
VCC
VCC (max)
Program, Erase and Write Instructions are ignored
/CS must track VCC
VCC (min)
tVSL Read Instructions Device is fully
Reset Allowed Accessible
State
VWI
tPUW
Time
VCC
/CS
Time
- 59 -
W25Q128JV
/CS = VCC,
Power-down Current ICC2 1 20 µA
VIN = GND or VCC
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V.
2. Checker Board Pattern.
Note:
1. Output Hi-Z is defined as the point where data out is no longer driven.
0.9 VCC
0.5 VCC
0.1 VCC
- 61 -
W25Q128JV
Clock frequency except for Read Data (03h) FR fC1 D.C. 133 MHz
instructions (3.0V-3.6V)
Clock frequency except for Read Data (03h) FR fC2 D.C. 104 MHz
instructions( 2.7V-3.0V)
Clock frequency for Read Data instruction (03h) fR D.C. 50 MHz
SPEC
DESCRIPTION SYMBOL ALT UNIT
MIN TYP MAX
- 63 -
W25Q128JV
/CS
tCLH
CLK
tCLQV tCLQV tCLL tSHQZ
tCLQX tCLQX
IO
MSB OUT LSB OUT
output
/CS
tSHSL
tCHSL tSLCH tCHSH tSHCH
CLK
tDVCH tCHDX tCLCH tCHCL
IO
MSB IN LSB IN
input
Millimeters Inches
Symbol
Min Nom Max Min Nom Max
A 1.75 1.95 2.16 0.069 0.077 0.085
A1 0.05 0.15 0.25 0.002 0.006 0.010
A2 1.70 1.80 1.91 0.067 0.071 0.075
b 0.35 0.42 0.48 0.014 0.017 0.019
C 0.19 0.20 0.25 0.007 0.008 0.010
D 5.18 5.28 5.38 0.204 0.208 0.212
D1 5.13 5.23 5.33 0.202 0.206 0.210
E 5.18 5.28 5.38 0.204 0.208 0.212
E1 5.13 5.23 5.33 0.202 0.206 0.210
e 1.27 BSC 0.050 BSC
H 7.70 7.90 8.10 0.303 0.311 0.319
L 0.50 0.65 0.80 0.020 0.026 0.031
y --- --- 0.10 --- --- 0.004
θ 0° --- 8° 0° --- 8°
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W25Q128JV
Millimeters Inches
Symbol
Min Nom Max Min Nom Max
A 2.36 2.49 2.64 0.093 0.098 0.104
A1 0.10 --- 0.30 0.004 --- 0.012
A2 --- 2.31 --- --- 0.091 ---
b 0.33 0.41 0.51 0.013 0.016 0.020
C 0.18 0.23 0.28 0.007 0.009 0.011
D 10.08 10.31 10.49 0.397 0.406 0.413
E 10.01 10.31 10.64 0.394 0.406 0.419
E1 7.39 7.49 7.59 0.291 0.295 0.299
e 1.27 BSC 0.050 BSC
L 0.38 0.81 1.27 0.015 0.032 0.050
y --- --- 0.10 --- --- 0.004
θ 0° --- 8° 0° --- 8°
Millimeters Inches
Symbol
Min Nom Max Min Nom Max
A 0.70 0.75 0.80 0.028 0.030 0.031
A1 0.00 0.02 0.05 0.000 0.001 0.002
b 0.35 0.40 0.48 0.014 0.016 0.019
C --- 0.20 REF --- --- 0.008 REF ---
D 5.90 6.00 6.10 0.232 0.236 0.240
D2 3.35 3.40 3.45 0.132 0.134 0.136
E 4.90 5.00 5.10 0.193 0.197 0.201
E2 4.25 4.30 4.35 0.167 0.169 0.171
e 1.27 BSC 0.050 BSC
L 0.55 0.60 0.65 0.022 0.024 0.026
Note:
The metal pad area on the bottom center of the package is not connected to any internal electrical signals. It can be
left floating or connected to the device ground (GND pin). Avoid placement of exposed PCB vias under the pad.
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W25Q128JV
MILLIMETERS INCHES
SYMBOL
Min Nom Max Min Nom Max
A 0.70 0.75 0.80 0.028 0.030 0.031
A1 0.00 0.02 0.05 0.000 0.001 0.002
b 0.35 0.40 0.48 0.014 0.016 0.019
C --- 0.20 Ref. --- --- 0.008 Ref. ---
D 7.90 8.00 8.10 0.311 0.315 0.319
D2 3.35 3.40 3.45 0.132 0.134 0.136
E 5.90 6.00 6.10 0.232 0.236 0.240
E2 4.25 4.30 4.35 0.167 0.169 0.171
e 1.27 BSC 0.050 BSC
L 0.45 0.50 0.55 0.018 0.020 0.022
y 0.00 --- 0.05 0.000 --- 0.002
Note:
The metal pad area on the bottom center of the package is not connected to any internal electrical signals. It can be
left floating or connected to the device ground (GND pin). Avoid placement of exposed PCB vias under the pad.
Note:
Ball land: 0.45mm. Ball Opening: 0.35mm
PCB ball land suggested <= 0.35mm
Millimeters Inches
Symbol
Min Nom Max Min Nom Max
A --- --- 1.20 --- --- 0.047
A1 0.25 0.30 0.35 0.010 0.012 0.014
A2 --- 0.85 --- --- 0.033 ---
b 0.35 0.40 0.45 0.014 0.016 0.018
D 7.90 8.00 8.10 0.311 0.315 0.319
D1 4.00 BSC 0.157 BSC
E 5.90 6.00 6.10 0.232 0.236 0.240
E1 4.00 BSC 0.157 BSC
SE 1.00 TYP 0.039 TYP
SD 1.00 TYP 0.039 TYP
e 1.00 BSC 0.039 BSC
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W25Q128JV
Note:
Ball land: 0.45mm. Ball Opening: 0.35mm
PCB ball land suggested <= 0.35mm
Millimeters Inches
Symbol
Min Nom Max Min Nom Max
A --- --- 1.20 --- --- 0.047
A1 0.25 0.30 0.35 0.010 0.012 0.014
b 0.35 0.40 0.45 0.014 0.016 0.018
D 7.95 8.00 8.05 0.313 0.315 0.317
D1 5.00 BSC 0.197 BSC
E 5.95 6.00 6.05 0.234 0.236 0.238
E1 3.00 BSC 0.118 BSC
e 1.00 BSC 0.039 BSC
25Q = SpiFlash Serial Flash Memory with 4KB sectors, Dual/Quad I/O
128J = 128M-bit
V = 2.7V to 3.6V
(3,4)
Notes:
1. The “W” prefix is not included on the part marking.
2. Only the 2nd letter is used for the part marking; WSON package type ZP & ZE are not used for the part
marking.
3. Standard bulk shipments are in Tube (shape E). Please specify alternate packing method, such as Tape and
Reel (shape T) or Tray (shape S), when placing orders.
4. For shipments with OTP feature enabled, please contact Winbond for details.
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W25Q128JV
The following table provides the valid part numbers for the W25Q128JV SpiFlash Memory. Please contact
Winbond for specific availability by density and package type. Winbond SpiFlash memories use a 12-digit
Product Number for ordering. However, due to limited space, the Top Side Marking on all packages uses
an abbreviated 10-digit number.
B(1)
TFBGA-24 8x6-mm 128M-bit W25Q128JVBIQ 25Q128JVBQ
(5x5 Ball Array)
C(1)
TFBGA-24 8x6-mm 128M-bit W25Q128JVCIQ 25Q128JVCQ
(6x4 Ball Array)
Note:
1. These package types are special order, please contact Winbond for more information.
Trademarks
Winbond and SpiFlash are trademarks of Winbond Electronics Corporation.
All other marks are the property of their respective owner.
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components in systems
or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control instruments, or for
other applications intended to support or sustain life. Furthermore, Winbond products are not intended for
applications wherein failure of Winbond products could result or lead to a situation wherein personal injury,
death or severe property or environmental damage could occur. Winbond customers using or selling these
products for use in such applications do so at their own risk and agree to fully indemnify Winbond for any
damages resulting from such improper use or sales.
Information in this document is provided solely in connection with Winbond products. Winbond
reserves the right to make changes, corrections, modifications or improvements to this document
and the products and services described herein at any time, without notice.
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