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    sts1nk60z 1851847

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    sts1nk60z 1851847

    Uploaded by

    Marcelo Fernandez
    4 views9 pages

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    sts1nk60z-1851847

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    4 views9 pages

    sts1nk60z 1851847

    Uploaded by

    Marcelo Fernandez

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    © All Rights Reserved
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    of 9

    STS1NK60Z

    N-CHANNEL 600V - 13Ω - 0.25A - SO-8


    Zener-Protected SuperMESH™ Power MOSFET

    TYPE VDSS RDS(on) ID Pw


    STS1NK60Z 600 V < 15 Ω 0.25 A 2W
     TYPICAL RDS(on) = 13Ω
     EXTREMELY HIGH dv/dt CAPABILITY
     ESD IMPROVED CAPABILITY
     100% AVALANCHE TESTED
     NEW HIGH VOLTAGE BENCHMARK SO-8
     GATE CHARGE MINIMIZED

    DESCRIPTION
    The SuperMESH™ series is obtained through an
    extreme optimization of ST’s well established strip- INTERNAL SCHEMATIC DIAGRAM
    based PowerMESH™ layout. In addition to pushing
    on-resistance significantly down, special care is tak-
    en to ensure a very good dv/dt capability for the
    most demanding applications. Such series comple-
    ments ST full range of high voltage MOSFETs in-
    cluding revolutionary MDmesh™ products.

    APPLICATIONS
     AC ADAPTORS AND BATTERY CHARGERS
     SWITH MODE POWER SUPPLIES (SMPS)

    ORDERING INFORMATION
    SALES TYPE MARKING PACKAGE PACKAGING
    STS1NK60Z S1NK60Z SO-8 TAPE & REEL

    June 2003 1/8


    STS1NK60Z

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Unit
    VDS Drain-source Voltage (VGS = 0) 600 V
    VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V
    VGS Gate- source Voltage ± 30 V
    ID Drain Current (continuous) at TC = 25°C 0.25 A
    ID Drain Current (continuous) at TC = 100°C 0.16 A
    IDM () Drain Current (pulsed) 1 A
    PTOT Total Dissipation at TC = 25°C 2 W
    Derating Factor 0.016 W/°C
    VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 800 V
    dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
    Tj Operating Junction Temperature -55 to 150 °C
    Tstg Storage Temperature -55 to 150 °C
    ( ) Pulse width limited by safe operating area
    (1) ISD ≤0.3A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

    THERMAL DATA
    Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

    GATE-SOURCE ZENER DIODE


    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    BVGSO Gate-Source Breakdown Igs=± 1mA (Open Drain) 30 V
    Voltage

    PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES


    The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
    ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
    applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
    cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
    usage of external components.

    2/8
    STS1NK60Z

    ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)


    ON/OFF
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    V(BR)DSS Drain-source ID = 1 mA, VGS = 0 600 V
    Breakdown Voltage
    IDSS Zero Gate Voltage VDS = Max Rating 1 µA
    Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C 50 µA
    IGSS Gate-body Leakage VGS = ± 20V ±10 µA
    Current (VDS = 0)
    VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V
    RDS(on) Static Drain-source On VGS = 10V, ID = 0.4 A 13 15 Ω
    Resistance

    DYNAMIC
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    gfs (1) Forward Transconductance VDS = V, ID = 0.4 A 0.5 S
    Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 94 pF
    Coss Output Capacitance 17.6 pF
    Crss Reverse Transfer 2.8 pF
    Capacitance
    Coss eq. (3) Equivalent Output VGS = 0V, VDS = 0V to 480V 11 pF
    Capacitance
    SWITCHING ON
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    td(on) Turn-on Delay Time VDD = 300V, ID = 0.4 A 5.5 ns
    tr Rise Time RG = 4.7Ω VGS = 10 V 5 ns
    (Resistive Load see, Figure 3)
    Qg Total Gate Charge VDD = 480V, ID = 0.8 A, 4.9 6.9 nC
    Qgs Gate-Source Charge VGS = 10V 1 nC
    Qgd Gate-Drain Charge 2.7 nC

    SWITCHING OFF
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    td(off) Turn-off Delay Time VDD = 300V, ID = 0.4A 13 ns
    tf Fall Time RG = 4.7Ω VGS = 10 V 28 ns
    (Resistive Load see, Figure 3)
    tr(Voff) Off-voltage Rise Time VDD =480V, ID = 0.8A, 28 ns
    tf Fall Time RG = 4.7Ω, VGS = 10V 12.5 ns
    tc Cross-over Time (Inductive Load see, Figure 5) 48 ns

    SOURCE DRAIN DIODE


    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    ISD Source-drain Current 0.25 A
    ISDM (2) Source-drain Current (pulsed) 1 A
    VSD (1) Forward On Voltage ISD = 0.25A, VGS = 0 1.6 V
    trr Reverse Recovery Time ISD = 0.8 A, di/dt = 100A/µs 140 ns
    Qrr Reverse Recovery Charge VDD = 20V, Tj = 150°C 224 nC
    IRRM Reverse Recovery Current (see test circuit, Figure 5) 3.2 A
    Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
    2. Pulse width limited by safe operating area.
    3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
    VDSS.

    3/8
    STS1NK60Z

    Safe Operating Area Thermal Impedance

    Output Characteristics Transfer Characteristics

    Transconductance Static Drain-source On Resistance

    4/8
    STS1NK60Z

    Gate Charge vs Gate-source Voltage Capacitance Variations

    Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature

    Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature

    5/8
    STS1NK60Z

    Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

    Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
    Resistive Load

    Fig. 5: Test Circuit For Inductive Load Switching


    And Diode Recovery Times

    6/8
    STS1NK60Z

    SO-8 MECHANICAL DATA

    mm inch
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.
    A 1.75 0.068
    a1 0.1 0.25 0.003 0.009
    a2 1.65 0.064
    a3 0.65 0.85 0.025 0.033
    b 0.35 0.48 0.013 0.018
    b1 0.19 0.25 0.007 0.010
    C 0.25 0.5 0.010 0.019
    c1 45 (typ.)
    D 4.8 5.0 0.188 0.196
    E 5.8 6.2 0.228 0.244
    e 1.27 0.050
    e3 3.81 0.150
    F 3.8 4.0 0.14 0.157
    L 0.4 1.27 0.015 0.050
    M 0.6 0.023
    S 8 (max.)

    0016023

    7/8
    STS1NK60Z

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
    consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
    its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
    mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
    previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
    systems without express written approval of STMicroelectronics.
    © The ST logo is a registered trademark of STMicroelectronics

    © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved


    STMicroelectronics GROUP OF COMPANIES
    Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
    Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
    © http://www.st.com

    8/8
    Mouser Electronics

    Authorized Distributor

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    STS1NK60Z

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