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    BUZ80A/BUZ80AFI N-Channel Enhancement Mode Power MOS Transistor

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    guanitou
    This document provides specifications for the BUZ80A and BUZ80AFI N-channel enhancement mode power MOS transistors. Key specifications include maximum ratings of 800V drain-source voltage and 3.8A continuous drain current. Typical on-resistance is 2.5 ohms. The transistors are intended for use in applications such as switch mode power supplies, lighting equipment, and UPS systems. Electrical characteristics including threshold voltage, on-resistance, switching times and safe operating areas are provided.

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    BUZ80A/BUZ80AFI N-Channel Enhancement Mode Power MOS Transistor

    Uploaded by

    guanitou
    87 views4 pages
    This document provides specifications for the BUZ80A and BUZ80AFI N-channel enhancement mode power MOS transistors. Key specifications include maximum ratings of 800V drain-source voltage and 3.8A continuous drain current. Typical on-resistance is 2.5 ohms. The transistors are intended for use in applications such as switch mode power supplies, lighting equipment, and UPS systems. Electrical characteristics including threshold voltage, on-resistance, switching times and safe operating areas are provided.

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    This document provides specifications for the BUZ80A and BUZ80AFI N-channel enhancement mode power MOS transistors. Key specifications include maximum ratings of 800V drain-source voltage and 3.8A continuous drain current. Typical on-resistance is 2.5 ohms. The transistors are intended for use in applications such as switch mode power supplies, lighting equipment, and UPS systems. Electrical characteristics including threshold voltage, on-resistance, switching times and safe operating areas are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    87 views4 pages

    BUZ80A/BUZ80AFI N-Channel Enhancement Mode Power MOS Transistor

    Uploaded by

    guanitou
    This document provides specifications for the BUZ80A and BUZ80AFI N-channel enhancement mode power MOS transistors. Key specifications include maximum ratings of 800V drain-source voltage and 3.8A continuous drain current. Typical on-resistance is 2.5 ohms. The transistors are intended for use in applications such as switch mode power supplies, lighting equipment, and UPS systems. Electrical characteristics including threshold voltage, on-resistance, switching times and safe operating areas are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    BUZ80A/BUZ80AFI

    N-Channel Enhancement Mode


    Power MOS Transistor

    TYPE VDSS RDS(on) ID


    BUZ80A 800V <3 Ω 3.8A
    BUZ80AFI 800V <3 Ω 2.4A
    z Typical RDS(on)=2.5 Ω
    z AVALANCHE RUGGED TECHNOLOGY
    z 100% AVALANCHE TESTED
    z REPETITIVE AVALANCHE DATA AT 100℃
    z LOW INPUT CAPACITANCE
    z LOW GATE CHARGE TO-220 ISOWATT220
    z APPLICATION ORIENTED CHARACTERIZATION
    INTERNAL SCHEMATIC DIAGRAM

    APPLICATIONS
    z HIGH CURRENT, HIGH SPEED SWITCHING
    z SWITCH MODE POWER SUPPLIES (SMPS)
    z CONSUMER AND INDUSTRIAL LIGHTING
    z DC-AC INVERTERS FOR WELDING EQUIPMENT AND
    UNINTERRUPTIBLE POWER SUPPLY (UPS)

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Unit
    BUZ80A BUZ80AFI
    VDS Drain-source Voltage (VGS=0) 800 V
    VDGR Drain-gate Voltage (RGS=20kΩ) 800 V
    VGS Gate-source Voltage ±20 V
    ID Drain Current (continuous) at Tc=25℃ 3.8 2.4 A
    ID Drain Current (continuous) at Tc=100℃ 2.3 1.4 A
    IDM(•) Drain Current (pulsed) 15 15 A
    Ptot Total Dissipation at Tc=25℃ 100 40 W
    Derating Factor 0.8 0.32 W/℃
    VISO Insulation Withstand Voltage (DC) - 2000 V
    Tstg Storage Temperature -65 to 150 ℃
    Tj Max. Operating Junction Temperature 150 ℃
    (•) Pulse width limited by safe operating area

    www.artschip.com 1
    BUZ80A/BUZ80AFI
    N-Channel Enhancement Mode
    Power MOS Transistor

    THERMAL DATA
    To-220 ISOWATT220
    Rthj-case Thermal Resistance Junctions-case MAX 1.25 3.12 ℃/W
    Rthj-amb Thermal Resistance Junctions-ambient Max 62.5 ℃/W
    Rthc-sink Thermal Resistance Case-sink Typ 0.5 ℃/W
    TI Maximum Lead Temperature For Soldering Purpose 300 ℃

    AVALANCHE CHARACTERISTICS
    Symbol Parameter Max Value Unit
    IAR Avalanche Current, Repetitive or Not-Repetitive 3.8 A
    (pulse width limited by Tjmax, δ <1%)
    EAS Single Pulse Avalanche Energy 200 mJ
    (starting Tj=25℃,ID=IAR, VDD=50V)
    EAR Repetitive Avalanche Energy 8 mJ
    (pulse width limited by Tjmax, δ <1%)
    IAR Avalanche Current, Repetitive or Not-Repetitive 2.2 A
    (Tc=100℃, pulse width limited by Tjmax, δ <1%)
    ELECTRICAL CHARACTERISTICS (Tcase=25℃ unless otherwise specified)
    OFF
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    V(BR)DSS Drain-source ID=250µA VGS=0 800 V
    Breakdown Voltage
    IDSS Zero Gate Voltage VDS=Max Rating 250 µA
    Drain Current (VGS=0) VDS=Max Rating x 0.8 Tc=125℃ 1000 µA
    IGSS Gate-body leakage VGS=±20V ±100 nA
    Current (VDS=0)
    ON(*)
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    VGS(th) Gate Threshold Voltage VDS=VGS ID=1mA 2 3 4 V
    RDS(on) Static Drain-source On VGS=10V ID=1.7A 2.5 3 Ω
    Resistance VGS=10V ID=1.7A Tc=100℃ 6 Ω
    ID(on) On State Drain Current VGS>ID(on) x RDS(on)max 3.8 A
    VGS=10V
    DYNAMIC
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    gfs(*) Forward VDS> ID(on) x RDS(on)max ID=1.7A 1 s
    Transconductance
    Ciss Input Capacitance VDS=25V f=1MHz VGS=0 1100 pF
    Coss Output Capacitance 150 pF
    Crss Reverse Transfer 55 pF
    Capacitance

    www.artschip.com 2
    BUZ80A/BUZ80AFI
    N-Channel Enhancement Mode
    Power MOS Transistor

    ELECTRICAL CHARACTERISTICS (Continued)


    SWITCHING ON
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    td(on) Turn-on Time VDD=30V ID=2.3A 65 90 ns
    tr Rise Time RG=50Ω VGS=10V 150 200 ns
    (see test circuit, figure 3)
    (di/dt)on Turn-on Current Slope VDD=600V ID=3.8A 80 110 A/µs
    RG=50 Ω VGS=10V
    (see test circuit, figure 5)
    Qg Total Gate Charge VDD=400V ID=5A VGS=10V 55 70 nC
    Qgs Gate-Source Charge 8 nC
    Qgd Gate-Drain Charge 26 nC
    SWITCHING OFF
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    tr(Voff) Off-voltage Rise Time VDS=600V ID=3.8A 110 145 ns
    tf Fall Time RG=50 Ω VGS=10V 140 190 ns
    tc Cross-over Time (see test circuit, figure 5) 150 200 ns
    SOURCE DRAIN DIODE
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    ISD Source-drain Current 3.8 A
    ISDM(•) Source-drain Current 15 A
    (pulsed)
    VSD(*) Forward On Voltage ISD=7.6A VGS=0 2 V
    trr Reverse Recovery Time ISD=3.8A di/dt=100A/µs 500 ns
    Qrr Reverse Recovery Charge VR=100V Tj=150℃ 4.3 µC
    IRRM Reverse Recovery Current (see test circuit, figure 5) 17 A
    (*) Pulsed: Pulse duration=300µs, duty cycle 1.5%
    (•) Pulse width limited by safe operating area
    Safe Operating Areas For TO-220 Package Safe Operating Areas For ISOWATT220 Package

    www.artschip.com 3
    BUZ80A/BUZ80AFI
    N-Channel Enhancement Mode
    Power MOS Transistor

    Thermal Impedance For To-220 Package Thermal Impedance For ISOWATT220 Package

    Derating Curve For To-220 Package Derating Curve For ISOWATT220 Package

    Output Characteristics Transfer Characteristics

    www.artschip.com 4

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