TLV 1117 LV
TLV 1117 LV
TLV 1117 LV
1 Features 3 Description
• Typical accuracy: 1.5% The TLV1117LV low-dropout (LDO) linear regulator is
• Low IQ: 100 μA (maximum) a low input voltage version of the popular TLV1117
– 500 times lower than standard 1117 devices voltage regulator.
• VIN: 2 V to 5.5 V The TLV1117LV is an extremely low-power device
– Absolute maximum VIN: 6 V that consumes 500 times lower quiescent current
• Stable With 0-mA output current than traditional 1117 voltage regulators, making the
• Low dropout: 455 mV at 1 A for VOUT = 3.3 V device designed for applications that mandate very
• High PSRR: 65 dB at 1 kHz low standby current. The TLV1117LV LDO is also
• Minimum specified current limit: 1.1 A stable with 0 mA of load current; there is no
• Stable with cost-effective ceramic capacitors: minimum load requirement, making the device a
– With 0-Ω ESR good choice for applications where the regulator must
• Temperature range: –40°C to +125°C power very small loads during standby in addition
• Thermal shutdown and overcurrent protection to large currents on the order of 1 A during normal
• For drop-in replacement with upgraded operation. The TLV1117LV offers excellent line and
functionality, see the TLV761 load transient performance, resulting in very small
• Available in a SOT-223 package magnitude undershoots and overshoots of output
– See the Mechanical, Packaging, and Orderable voltage when the load current requirement changes
Information section at the end of this document from less than 1 mA to more than 500 mA.
for a complete list of available voltage options.
A precision band-gap and error amplifier provides
2 Applications 1.5% accuracy. A very high power-supply rejection
ratio (PSRR) enables use of the device for post-
• Set-top boxes
regulation after a switching regulator. Other valuable
• TVs and monitors
features include low output noise and low-dropout
• PC peripherals, notebooks, motherboards
voltage.
• Modems and other communication products
• Switching power supply post-regulation The device is internally compensated to be stable with
0-Ω equivalent series resistance (ESR) capacitors.
These key advantages enable the use of cost-
effective, small-size ceramic capacitors. Cost-effective
capacitors that have higher bias voltages and
temperature derating can also be used if desired.
The TLV1117LV is available in a SOT-223 package.
Package Information
PART NUMBER PACKAGE(1) BODY SIZE (NOM)
TLV1117LV DCY (SOT-223, 4) 6.50 mm × 3.50 mm
INPUT OUTPUT
CIN COUT
1 µF Device 1 µF
GND
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TLV1117LV
SBVS160C – MAY 2011 – REVISED JANUARY 2023 www.ti.com
Table of Contents
1 Features............................................................................1 8 Application and Implementation.................................. 13
2 Applications..................................................................... 1 8.1 Application Information............................................. 13
3 Description.......................................................................1 8.2 Typical Application.................................................... 13
4 Revision History.............................................................. 2 8.3 Best Design Practices...............................................14
5 Pin Configuration and Functions...................................3 8.4 Power Supply Recommendations.............................14
6 Specifications.................................................................. 4 8.5 Layout....................................................................... 14
6.1 Absolute Maximum Ratings........................................ 4 9 Device and Documentation Support............................16
6.2 ESD Ratings............................................................... 4 9.1 Device Support......................................................... 16
6.3 Recommended Operating Conditions.........................4 9.2 Documentation Support............................................ 16
6.4 Thermal Information....................................................4 9.3 Receiving Notification of Documentation Updates....16
6.5 Electrical Characteristics.............................................5 9.4 Support Resources................................................... 16
6.6 Typical Characteristics................................................ 6 9.5 Trademarks............................................................... 16
7 Detailed Description...................................................... 11 9.6 Electrostatic Discharge Caution................................16
7.1 Overview................................................................... 11 9.7 Glossary....................................................................16
7.2 Functional Block Diagram......................................... 11 10 Mechanical, Packaging, and Orderable
7.3 Feature Description...................................................11 Information.................................................................... 17
7.4 Device Functional Modes..........................................12
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
3 INPUT
OUTPUT
2 OUTPUT
1 GND
6 Specifications
6.1 Absolute Maximum Ratings
at TJ = 25°C (unless otherwise noted); all voltages are with respect to GND(1)
MIN MAX UNIT
VIN –0.3 6 V
Voltage
VOUT –0.3 6 V
Current IOUT Internally limited
Output short-circuit duration Indefinite
Continuous total power
PDISS See Thermal Information
dissipation
Operating junction, TJ –55 150 °C
Temperature
Storage, Tstg –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
note.
(1) VDO is measured for devices with VOUT(nom) = 2.5 V so that VIN = 2.45 V.
(2) Start-up time = time from when VIN asserts to when output is sustained at a value greater than or equal to 0.98 × VOUT(nom).
1.9 1.9
VOUT = 1.8 V VOUT = 1.8 V
IOUT = 10 mA IOUT = 1 A
1.85 1.85
Output Voltage (V)
800
1.8 600
400
1.75 +125°C
+85°C
200
+25°C
-40°C
1.7 0
0 100 200 300 400 500 600 700 800 900 1000 2 2.5 3 3.5 4 4.5
Output Current (mA) Input Voltage (V)
Figure 6-3. Load Regulation Figure 6-4. Dropout Voltage vs Input Voltage
600 1.9
VOUT = 1.8 V
500
1.85
Dropout Voltage (mV)
400
300 1.8
200
+125°C 1.75
+85°C
100
+25°C 10 mA
-40°C 500 mA
0 1.7
0 100 200 300 400 500 600 700 800 900 1000 -40 -25 -10 5 20 35 50 65 80 95 110 125
Output Current (mA) Temperature (°C)
Figure 6-5. Dropout Voltage vs Output Current Figure 6-6. Output Voltage vs Temperature
600 1.8
1.78
500
1.76
Quiescent Current (mA)
Figure 6-7. Quiescent Current vs Load Figure 6-8. Current Limit vs Input Voltage
90 90
IOUT = 500 mA IOUT = 500 mA
Power-Supply Rejection Ratio (dB)
50 50
40 40
30 30
20 20
10 10
VIN - VOUT = 3 V VIN - VOUT = 1.5 V
0 0
10 100 1k 10 k 100 k 1M 10 M 10 100 1k 10 k 100 k 1M 10 M
Frequency (Hz) Frequency (Hz)
Figure 6-9. Power-Supply Rejection Ratio vs Frequency Figure 6-10. Power-Supply Rejection Ratio vs Frequency
90 10
f = 50 Hz f = 120 Hz
Power-Supply Rejection Ratio (dB)
80
Noise Spectral Density (mV/?Hz)
f = 10 kHz
70 1
60
f = 1 kHz f = 100 kHz
50
0.1
f = 1 MHz
40
30 f = 10 MHz
0.01
20
10
VIN - VOUT = 1.5 V
0.001
0
10 100 1k 10 k 100 k 1M 10 M
0 100 200 300 400 500 600 700 800 900 1000
Frequency (Hz)
Output Current (mA)
200 mA/div
200 mA IOUT 200 mA IOUT
VOUT VOUT
50 mV/div
50 mV/div
50 ms/div 50 ms/div
COUT = 1 μF COUT = 10 μF
Figure 6-13. Load Transient Response 200 mA to 500 mA Figure 6-14. Load Transient Response 200 mA to 500 mA
VIN = 2.8 V
500 mA/div
500 mA/div
500 mA 500 mA
1 mA IOUT 1 mA IOUT
50 mV/div
50 mV/div
VOUT VOUT
50 ms/div 50 ms/div
COUT = 1 μF COUT = 10 μF
Figure 6-15. Load Transient Response 1 mA to 500 mA Figure 6-16. Load Transient Response 1 mA to 500 mA
1A 1A
500 mA/div
500 mA/div
100 mV/div
VOUT VOUT
50 ms/div 50 ms/div
COUT = 1 μF COUT = 10 μF
Figure 6-17. Load Transient Response 200 mA to 1 A Figure 6-18. Load Transient Response 200 mA to 1 A
1A 1A
500 mA/div
500 mA/div
1 mA IOUT 1 mA IOUT
100 mV/div
100 mV/div
VOUT VOUT
50 ms/div 50 ms/div
COUT = 1 μF COUT = 10 μF
Figure 6-19. Load Transient Response 1 mA to 1 A Figure 6-20. Load Transient Response 1 mA to 1 A
4.3 V 4.3 V
1 V/div
5 mV/div
VOUT VOUT
4.3 V 5.5 V
1 V/div
1 V/div
10 mV/div
VOUT VOUT
5.5 V 5.5 V
1 V/div
1 V/div
3.3 V VIN 3.3 V VIN
10 mV/div
10 mV/div
VOUT VOUT
7 Detailed Description
7.1 Overview
The TLV1117LV is a low quiescent current, high PSRR LDO capable of handling up to 1 A of load current. This
device features an integrated current limit, thermal shutdown, band-gap reference, and undervoltage lockout
(UVLO) circuit blocks.
7.2 Functional Block Diagram
IN OUT
Current
Limit
Thermal
Shutdown
UVLO
Bandgap
LOGIC
TLV1117LV Series
GND
INPUT OUTPUT
CIN COUT
1 µF Device 1 µF
GND
close to the power source. If source impedance is greater than 2 Ω, a 0.1-μF input capacitor can also be
necessary to ensure stability.
8.2.2.2 Transient Response
As with any regulator, increasing the size of the output capacitor reduces overshoot and undershoot magnitude.
8.2.3 Application Curves
4.3 V
1 V/div
200 mA IOUT 3.3 V VIN
VOUT
50 mV/div
5 mV/div
VOUT
Figure 8-2. Load Transient Response 200 mA to Figure 8-3. Line Transient Response VOUT = 1.8 V,
500 mA, COUT = 1 μF IOUT = 500 mA
The internal protection circuitry of the TLV1117LV is designed to protect against overload conditions. This
circuitry is not intended to replace proper heat sinking. Continuously running the TLV1117LV into thermal
shutdown degrades device reliability.
8.5.1.2 Power Dissipation
The ability to remove heat from the die is different for each package type, presenting different considerations in
the printed circuit board (PCB) layout. The PCB area around the device that is free of other components moves
the heat from the device to the ambient air. Performance data for JEDEC low and high-K boards are given in the
Thermal Information table. Using heavier copper increases the effectiveness in removing heat from the device.
The addition of plated through-holes to heat-dissipating layers also improves heat-sink effectiveness.
Power dissipation depends on input voltage and load conditions. Power dissipation (PD) is equal to the product
of the output current and the voltage drop across the output pass element, as shown in Equation 1:
OUTPUT
Tab
GND
COUT
CIN
1 2 3
GND INPUT
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
9.7 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 17-Jul-2024
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
TLV1117LV12DCYR ACTIVE SOT-223 DCY 4 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SI Samples
TLV1117LV12DCYT LIFEBUY SOT-223 DCY 4 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SI
TLV1117LV15DCYR ACTIVE SOT-223 DCY 4 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 VR Samples
TLV1117LV15DCYT LIFEBUY SOT-223 DCY 4 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 VR
TLV1117LV18DCYR ACTIVE SOT-223 DCY 4 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SH Samples
TLV1117LV18DCYT ACTIVE SOT-223 DCY 4 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SH Samples
TLV1117LV25DCYR ACTIVE SOT-223 DCY 4 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 VS Samples
TLV1117LV25DCYT ACTIVE SOT-223 DCY 4 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 VS Samples
TLV1117LV28DCYR ACTIVE SOT-223 DCY 4 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 VT Samples
TLV1117LV30DCYR ACTIVE SOT-223 DCY 4 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 VU Samples
TLV1117LV30DCYT LIFEBUY SOT-223 DCY 4 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 VU
TLV1117LV33DCYR ACTIVE SOT-223 DCY 4 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 TJ Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 17-Jul-2024
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 20-Apr-2024
B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers
Sprocket Holes
Q1 Q2 Q1 Q2
Pocket Quadrants
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 20-Apr-2024
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 20-Apr-2024
Width (mm)
H
W
Pack Materials-Page 3
MECHANICAL DATA
6,70 (0.264)
6,30 (0.248)
3,10 (0.122)
2,90 (0.114)
4
0,10 (0.004) M
Gauge Plane
1 2 3
0,25 (0.010)
0,84 (0.033) 0°–10°
2,30 (0.091)
0,66 (0.026)
0,10 (0.004) M
4,60 (0.181) 0,75 (0.030) MIN
1,70 (0.067)
1,80 (0.071) MAX 1,50 (0.059)
0,35 (0.014)
0,23 (0.009)
Seating Plane
4202506/B 06/2002
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