Scribd Logo
Upload

Welcome to Scribd!

  • 26 views

    2018 Dec. EC203-E - Ktu Qbank

    Uploaded by

    BLESSEN BABY

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2018 Dec. EC203-E - Ktu Qbank

    Uploaded by

    BLESSEN BABY
    26 views2 pages

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    26 views2 pages

    2018 Dec. EC203-E - Ktu Qbank

    Uploaded by

    BLESSEN BABY

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    C R3919 Pages: 2

    Reg No.:_______________ Name:__________________________


    APJ ABDUL KALAM TECHNOLOGICAL UNIVERSITY
    THIRD SEMESTER B.TECH DEGREE EXAMINATION, DECEMBER 2018
    Course Code: EC203
    Course Name: SOLID STATE DEVICES (EC, AE)
    Max. Marks: 100 Duration: 3 Hours

    PART A
    Answer any two full questions, each carries 15 marks. Marks
    1 a) Define Hall effect. Derive the expressions for majority carrier concentration and (7 )
    mobility.
    b) Explain the variation in energy levels of a semiconductor when an electric field ( 3)
    is applied?
    c) Consider a semiconductor bar with w=0.1mm, t=10µm and L=5mm. For ( 5)
    -5 2
    B=10kg (1kg= 10 Wb/cm ) and a current 1mA, we have VAB=-2mV,
    VCD=100mV, Find the type, concentration, and mobility of the majority carrier.
    2 a) Prove that n0p0 = ni2. (7)
    b) The Fermi level position in a Si sample at 300K is 0.29eV below Ec. Determine (8)
    the carrier concentration and conductivity of the specimen. Given that ni=1.5 x
    1010cm-3, µn=1350cm2/Vs, µp=480cm2/Vs.
    3 a) Derive an expression for drift current density. (7)
    b) Explain the effect of temperature on mobility. ( 3)
    c) Calculate the thermal equilibrium electron and hole concentration in Si at ( 5)
    T=300K, when the Fermi energy level is 0.27eV below the conduction band
    edge Ec. The effective densities of states in the conduction band and valance
    band are 2.8 x 1019 cm-3 & 1.04 x 1019 cm-3 respectively at 300K.

    PART B
    Answer any two full questions, each carries 15 marks.

    4 a) Draw the energy band diagram of a p-n junction at a) equilibrium b) Forward ( 6)


    bias c) Reverse bias.
    b) Differentiate Ohmic contact and Rectifying contacts with neat diagram. ( 9)
    5 a) Explain with neat diagrams (7)
    (i) Zener breakdown.
    (ii) Avalanche breakdown.

    Page 1 of 2

    For More Visit : KtuQbank.com


    C R3919 Pages: 2

    b) With appropriate energy band diagram explain the operation of a tunnel diode. (8)
    6 a) Determine the junction capacitance of a silicon pn junction at T = 300 K when a (7)
    reverse bias voltage of 5V is applied across the junction. The doping
    concentrations of p&n regions are 8x1021 m-3& 3x1022 m-3 respectively & the
    cross-sectional area of the junction is 5x10-9 m2. (Assume ni for Si at 300K is
    1.5x1010cm-3 and εr=11.7)
    b) Derive the expression for open circuit contact potential of a p-n junction under (8)
    equilibrium.

    PART C
    Answer any two full questions, each carries 20 marks.
    7 a) Derive the expression for drain current at saturation for a MOSFET. (8)
    b) Explain the basic performance parameters α, β & γ. (6)
    c) Explain early effect and early voltage. (6)
    8 a) Derive the expression for minority carrier distribution in a pnp transistor. (10)
    b) Explain the principle of operation of MOS capacitor with suitable energy band (10)
    diagram.
    9 a) Explain the principle of operation of FINFET with neat diagrams. (5)
    b) Plot the sub-threshold characteristics of MOSFET and explain. (5)
    c) Describe the C-V Characteristics of an Ideal MOS capacitor. Derive the (10)
    expression for threshold voltage.
    ****

    Page 2 of 2

    For More Visit : KtuQbank.com

    You might also like