BJT AC Analysis

Electronic Devices & Systems
Dr Chinmayee Dora
Dept. of Electronics & Communication Engineering
Centurion University of Management, Bhubaneswar
BJT AC Analysis
BJT as Amplifier
Amplifiers: transistors biased in the flat-part of the i-v curves

– BJT: forward-active region
– MOSFET: saturation region
In these regions, transistors can provide high voltage, current and power gains
Bias is provided to stabilize the operating point (the Q-Point) in the desired region of
operation
Q-point also determines
– Small-signal parameters of transistor
– Voltage gain, input resistance, output resistance
– Maximum input and output signal amplitudes
– Power consumption.
BJT Modelling
A model is a combination of
circuit elements, properly
chosen, that best approximates
the actual behavior of a
semiconductor device under
specific operating conditions.
BJT Analysis
dc analysis:
– Find dc equivalent circuit by replacing all capacitors by open circuits and
inductors by short circuits.
–Find Q-point from dc equivalent circuit by using appropriate large-signal
transistor model.
ac analysis:
– Find ac equivalent circuit by replacing all capacitors by short circuits,
inductors by open circuits, dc voltage sources by ground connections and
dc current sources by open circuits.
– Replace transistor by its small-signal model
– Use small-signal ac equivalent to analyze ac characteristics of amplifier.
– Combine end results of dc and ac analysis to yield total voltages and
currents in the network.
THE re TRANSISTOR MODEL
Common-Emitter Configuration
For input side of the transistor, the applied voltage Vi is equal to the
voltage Vbe with the input current being the base current Ib.
If we redraw the collector characteristics to have a constant β the entire

characteristics at the output section can be replaced by a controlled
source whose magnitude is beta times the base current.
The equivalent model of figure with

diode can be awkward to work with
due to the direct connection between
input and output networks. It can be
improved by first replacing the diode by
its equivalent resistance as determined
by the level of IE .
(at room temp.)
Using the subscript e because the

determining current is the emitter
current will result in
1
1 ≅
EARLY VOLTAGE
The Early voltage is sufficiently large

compared with the applied collector-to-emitter
voltage to permit the following approximation.
For situations where the Early voltage is not available the output
impedance can be found from the characteristics at any base or collector
current using the following equation:
CE Equivalent circuit
• The equivalent circuit of Figure will be used throughout the analysis to

follow for the common-emitter configuration.
• Typical values of beta run from 50 to 200.
• Values of βre typically running from a few hundred ohms to a maximum of
6 k to 7 k.
• The output resistance ro is typically in the range of 40 k to 50 k.
CB equivalent circuit
For the ac response, the diode can be replaced by its equivalent ac resistance
determined by re = 26 mV/I E
CB equivalent circuit
common-base configurations have very low input impedance because it is

essentially simply re . Typical values extend from a few ohms to perhaps 50 Ω.
The output impedance ro will typically extend into the megohm range.
Because the output current is opposite to the defined I o direction, there is no
phase shift between the input and output voltages.
For the common-emitter configuration there is a 180 ° phase shift.
COMMON-EMITTER FIXED-BIAS
CONFIGURATION
The input signal Vi is applied to the base of the
transistor, whereas the output Vo is off the collector.
In addition, recognize that the input current Ii is not
the base current, but the source current, and the
output current Io is the collector current.
The small-signal ac analysis begins by removing
the dc effects of VCC and replacing the dc blocking
capacitors C1 and C2 by short-circuit equivalents .
Common ground of the dc supply and the transistor
emitter terminal permits the relocation of RB and
RC in parallel with the input and output sections of
the transistor, respectively.
In addition, note the placement of the important
network parameters Zi , Zo , Ii , and Io on the
redrawn network.
Substituting the re model for the common-emitter
configuration results in the network of Figure.
β is obtained from the specification sheet of
transistor.
r0 and re are obtained from c/cs graph.
The output impedance of any system is defined

as the impedance Z0 determined when Vi =0.
When Vi =0, Ii = Ib = 0, resulting in an open circuit
equivalence for the current source.
Practice Problem
Solution
Voltage Divider Bias
Practice Problem
Solution
CE emitter bias configuration
Assignment
CB configuration
THE HYBRID EQUIVALENT MODEL
The re model has the advantage that the parameters are defined by the
actual operating conditions,
Whereas,
The parameters of the hybrid equivalent circuit are defined in general
terms for any operating conditions.
Hybrid Parameters
short-circuit input-impedance parameter open-circuit reverse voltage ratio

parameter
short-circuit
forward transfer current ratio parameter open-circuit output admittance parameter
Common-emitter configuration
Common-base configuration
For the common-emitter and common-base configurations, the magnitude of hr and ho is
often such that the results obtained for the important parameters such as Zi , Zo , Av , and Ai
are only slightly affected if hr and ho are not included in the model.
Approximate hybrid Equivalent circuit
Fixed Bias circuit
Voltage divider Configuration

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Electronic Devices & Systems

Amplifiers: transistors biased in the flat-part of the i-v curves

If we redraw the collector characteristics to have a constant β the entire

The equivalent model of figure with

Using the subscript e because the

The Early voltage is sufficiently large

• The equivalent circuit of Figure will be used throughout the analysis to

common-base configurations have very low input impedance because it is

The output impedance of any system is defined

short-circuit input-impedance parameter open-circuit reverse voltage ratio

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