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    Metal-Semiconductor System

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    This document discusses metal-semiconductor systems and provides diagrams of band bending and energy band structures at metal-semiconductor junctions. It explains that for n-type semiconductors, band bending occurs upward to form a depletion region under equilibrium conditions. Diagrams of band structures are provided to illustrate forward and reverse bias conditions. The document also discusses Ohmic and Schottky contacts, and how the barrier height depends on applied voltage for the first-order model of a metal-semiconductor junction.

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    Metal-Semiconductor System

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    sxfdxaveb
    384 views10 pages
    This document discusses metal-semiconductor systems and provides diagrams of band bending and energy band structures at metal-semiconductor junctions. It explains that for n-type semiconductors, band bending occurs upward to form a depletion region under equilibrium conditions. Diagrams of band structures are provided to illustrate forward and reverse bias conditions. The document also discusses Ohmic and Schottky contacts, and how the barrier height depends on applied voltage for the first-order model of a metal-semiconductor junction.

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    describes about basics of cnfets

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    This document discusses metal-semiconductor systems and provides diagrams of band bending and energy band structures at metal-semiconductor junctions. It explains that for n-type semiconductors, band bending occurs upward to form a depletion region under equilibrium conditions. Diagrams of band structures are provided to illustrate forward and reverse bias conditions. The document also discusses Ohmic and Schottky contacts, and how the barrier height depends on applied voltage for the first-order model of a metal-semiconductor junction.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    384 views10 pages

    Metal-Semiconductor System

    Uploaded by

    sxfdxaveb
    This document discusses metal-semiconductor systems and provides diagrams of band bending and energy band structures at metal-semiconductor junctions. It explains that for n-type semiconductors, band bending occurs upward to form a depletion region under equilibrium conditions. Diagrams of band structures are provided to illustrate forward and reverse bias conditions. The document also discusses Ohmic and Schottky contacts, and how the barrier height depends on applied voltage for the first-order model of a metal-semiconductor junction.

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    DEE4521

    Semiconductor Device Physics

    Metal-Semiconductor System

    Prof. Ming-Jer Chen Department of Electronics Engineering National Chiao-Tung University 03/21/2011
    1

    Band Bending at Surface of Semiconductors Depletion (suitable for a contactsemiconductor system, as suggested by many and many experiments done before)

    Accumulation (not suitable for a contactsemiconductor system) Inversion (not suitable for a contactsemiconductor system)
    2

    How to establish device physics for this case? (given a Doping concentration, two Ohmic contacts, and a supply voltage)
    3

    Low-resistance metal-semiconductor contacts using degenerate surface layers. Metal-n+n contact (a) and metal-p+p contact (b). The Ohmic barrier is thin enough to permit tunneling.

    Figure 6.23

    6-23

    How do holes and electrons communicate with each other at the interface?

    Metal-Semiconductor System (or Junction):


    Ohmic Contact -- Two-way conduction -- Zero resistance or potential drop -- Equilibrium at both sides Schottky Contact -- Usually for one-way conduction -- Considerable potential drop -- Usually One-sided equilibrium

    Energy band diagram as predicted by the electron affinity model for an Al:n-Si metal semiconductor junction: (a) Neutrality (b) equilibrium. The predicted barrier of 0.10 eV from metal to semiconductor is much less than the experimental value of about 0.7 eV. A more refined model is required.

    Figure 6.18

    These two diagrams are wrong!

    Must be band bending up, NOT down, for n-type.

    accumulation
    6

    6-18

    (a) The neutrality diagram for the Al:n-Si Schottky barrier diode including the tunneling-induced dipole effect. (b) The equilibrium energy band diagram for an Al:n-Si Schottky barrier diode.

    Figure 6.19

    This is the depletion case by bending band up for n-type.

    Wrong band diagram


    6-19

    Correct band diagram

    Energy band diagrams for a metal:n-semiconductor Schottky barrier. (a) For forward bias, electrons flow from semiconductor to metal. (b) For reverse bias, only a small leakage current flows. (c) For the first-order model, the metal-semiconductor barrier (EB(0) = EC(x = 0) - Efm) is independent of applied voltage.

    Figure 6.20

    6-20

    Xm = (2sVj/qND)1/2

    A Schottky barrier diode made with a p-type semiconductor. (a) Equilibrium; (b) forward bias; (c) reverse bias.

    Figure 6.21

    band bending down, for p-type.

    6-21

    Comparison of the I-Va characteristics of a Schottky diode and a pn junction diode. The scale for the reverse characteristic is compressed compared with the scale for forward bias.

    Figure 6.22

    Ohmic Contact
    10

    6-22

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