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    2 Power Diodes

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    Deepa Ragav R
    This document discusses power diodes, including their characteristics and operation. Power diodes act as switches in applications like rectifiers and switching regulators. They have larger power, voltage, and current handling capabilities than ordinary signal diodes but slower switching speeds. The document covers diode I-V characteristics, reverse recovery characteristics, and emerging silicon carbide diode technology which enables ultra-fast switching with low power loss.

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    2 Power Diodes

    Uploaded by

    Deepa Ragav R
    285 views15 pages
    This document discusses power diodes, including their characteristics and operation. Power diodes act as switches in applications like rectifiers and switching regulators. They have larger power, voltage, and current handling capabilities than ordinary signal diodes but slower switching speeds. The document covers diode I-V characteristics, reverse recovery characteristics, and emerging silicon carbide diode technology which enables ultra-fast switching with low power loss.

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    This document discusses power diodes, including their characteristics and operation. Power diodes act as switches in applications like rectifiers and switching regulators. They have larger power, voltage, and current handling capabilities than ordinary signal diodes but slower switching speeds. The document covers diode I-V characteristics, reverse recovery characteristics, and emerging silicon carbide diode technology which enables ultra-fast switching with low power loss.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    285 views15 pages

    2 Power Diodes

    Uploaded by

    Deepa Ragav R
    This document discusses power diodes, including their characteristics and operation. Power diodes act as switches in applications like rectifiers and switching regulators. They have larger power, voltage, and current handling capabilities than ordinary signal diodes but slower switching speeds. The document covers diode I-V characteristics, reverse recovery characteristics, and emerging silicon carbide diode technology which enables ultra-fast switching with low power loss.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    of 15

    POWER DIODES

    CONTENTS
    1. Introduction
    2. Diode Characteristics
    3. Reverse Recovery Characteristics
    4. Silicon Carbide Diodes
    INTRODUCTION
    A diode acts as a switch to perform various
    functions, such as:
    Switches in rectifiers
    Freewheeling in switching regulators
    Charge reversal of capacitor and energy transfer
    between components
    Energy feedback from load to the power source
    Trapped energy recovery
    Power diodes are similar to p-n junction signal
    diodes.
    Power diodes have larger power-, voltage-
    and current-handling capabilities than
    those of ordinary diodes.
    Frequency response or switching speed is
    low compared with that of signal diodes.
    Power diodes play a significant role in
    power electronics
    DIODE CHARACTERISTICS
    A power diode is a two-terminal pn junction device.
    When anode is positive with respect to the cathode,
    the diode is said to be forward biased and it
    conducts.
    When diode conducts it has a
    small forward drop voltage
    (which depends on
    manufacturing process and
    junction temperature).
    V-I characteristics of diode

    Operation in breakdown region will not be destructive, provided that the


    power dissipation is within the “safe level” specified by manufacturer’s
    data sheet.
    Diode Diode
    current voltage
    Thermal
    Voltage

    Leakage Current or Empirical constant:


    Reverse Saturation Emission coefficient or
    Current (10-15 to 10-6 A) Ideality Factor(1 to 2)

    Boltzmann’s constant: 1.3806x10-23 J/K

    Absolute temperature in Kelvin (K=273+oC)

    Electron charge: 11.6022x10-19 (C)


    The forward voltage drop of a power diode
    is VD=1.2V at ID=300A. Assuming that
    n=2 and VT=25.7 mV, find the reverse
    saturation current Is .
    REVERSE RECOVERY
    CHARACTERISTICS
    Current in forward-biased junction diode is due
    to the net effect of majority and minority carriers.
    Once its forward current is reduced to zero, the
    diode continues to conduct due to minority
    carriers that remain stored in pn-junction and the
    bulk semiconductor material.
    The minority carriers require a certain time to
    recombine with opposite charges and to be
    neutralized.
    This time is called reverse recovery time of the
    diode.
    IF : forward current
    IRR : reverse recovery current
    trr : reverse recovery time, measured from zero crossing to 25% of IRR
    ta : time due to charge storage in depletion region of pn-junction
    tb : time due to charge storage in the bulk semiconductor material
    Depends on junction temperature, rate of fall of forward current, and
    forward current prior to commutation, IF.

    Softness factor
    (SF)
     The reverse recovery time of a diode is
    trr=3μs and the rate of fall of the diode
    current is di/dt=30A/μs. Determine:
    a) The storage charge QRR, and
    b) The peak reverse current IRR.
    trr=3μs and di/dt=30A/μs.
    Power Diodes
     General purpose
     Rating up to 6000V, 4500A
     High speed (or fast recovery)
    Rating up to 6000V, 1100A
    Reverse recovery time 0.1 to 5μs
    Essential for high-frequency switching
     Schottky
    Low on-state voltage
    Very small recover time (typically nanoseconds).
    Leakage current increases with voltage rating
    Rating limited to 100V, 300A
    SILICON CARBIDE DIODES
     Silicon Carbide (SiC) is a new material in
    PE.
     High performance characteristics:
    Ultra low power loss and high reliability
    No reverse recovery time
    Ultra fast switching behavior
    No temperature influence on the switching
    behavior

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