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    Gunn Diode: Transferred Electron Device (Ted)

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    Shreya Ramesh
    The document discusses Gunn diodes, which are two-terminal semiconductor devices that exhibit negative resistance. They generate microwave oscillations through the Gunn effect and are commonly used for applications like sensors, automatic door openers, and radio oscillators. Key points include: 1) Gunn diodes are made from n-type materials like GaAs and operate based on the transfer of electrons between conduction bands under an applied electric field, known as the Gunn effect. 2) They can generate microwave signals through two modes - transit time mode and limited space charge accumulation mode. 3) Applications include sensors, traffic controls, train safety systems, and radio equipment due to their ability to amplify and generate high

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    Gunn Diode: Transferred Electron Device (Ted)

    Uploaded by

    Shreya Ramesh
    404 views20 pages
    The document discusses Gunn diodes, which are two-terminal semiconductor devices that exhibit negative resistance. They generate microwave oscillations through the Gunn effect and are commonly used for applications like sensors, automatic door openers, and radio oscillators. Key points include: 1) Gunn diodes are made from n-type materials like GaAs and operate based on the transfer of electrons between conduction bands under an applied electric field, known as the Gunn effect. 2) They can generate microwave signals through two modes - transit time mode and limited space charge accumulation mode. 3) Applications include sensors, traffic controls, train safety systems, and radio equipment due to their ability to amplify and generate high

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    GUNN DIODE (1)

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    The document discusses Gunn diodes, which are two-terminal semiconductor devices that exhibit negative resistance. They generate microwave oscillations through the Gunn effect and are commonly used for applications like sensors, automatic door openers, and radio oscillators. Key points include: 1) Gunn diodes are made from n-type materials like GaAs and operate based on the transfer of electrons between conduction bands under an applied electric field, known as the Gunn effect. 2) They can generate microwave signals through two modes - transit time mode and limited space charge accumulation mode. 3) Applications include sensors, traffic controls, train safety systems, and radio equipment due to their ability to amplify and generate high

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    404 views20 pages

    Gunn Diode: Transferred Electron Device (Ted)

    Uploaded by

    Shreya Ramesh
    The document discusses Gunn diodes, which are two-terminal semiconductor devices that exhibit negative resistance. They generate microwave oscillations through the Gunn effect and are commonly used for applications like sensors, automatic door openers, and radio oscillators. Key points include: 1) Gunn diodes are made from n-type materials like GaAs and operate based on the transfer of electrons between conduction bands under an applied electric field, known as the Gunn effect. 2) They can generate microwave signals through two modes - transit time mode and limited space charge accumulation mode. 3) Applications include sensors, traffic controls, train safety systems, and radio equipment due to their ability to amplify and generate high

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    of 20

    GUNN DIODE

    TRANSFERRED ELECTRON DEVICE (TED)


    MICROWAVE SEMICONDUCTOR DIODES

    GUNN DIODE VARACTOR DIODE CRYSTAL DIODE PIN DIODE

    Generation of Frequency Mixing 2 frequencies Signal attenuation,


    microwave multiplication, Tuning & detection of switching and
    signals and amplification microwave signals modulation
    GUNN DIODE
    ● also known as a transferred electron device
    (TED)
    ● It is a two-terminal passive semiconductor
    electronic component, with negative
    resistance.
    ● It is used as low power oscillator at
    microwave frequency.
    ● It is based on the ‘gunn effect’ , discovered
    by John Battiscombe "J. B." Gunn in 1963.
    ● First discovered in GaAs and later observed
    in InP, InAs and CdTe.
    Working: ‘Gunn Effect’
    ● The lowest energy conduction band in GaAs is
    called primary valley.
    ● GaAs consists of 6 secondary valleys.
    ● When a DC voltage is applied, an electric field
    (E) is established.
    ● Measuring current density J as a function of electric field E, in n-
    type GaAs after a threshold voltage Vth, current becomes
    oscillatory w.r.t, time. This is called as gunn effect.
    ● These oscillations are in microwave frequency range.
    ● The region of V-I curve after Vth is called the -ve resistance or -ve
    differential conductivity region.
    ● Vth= 3.2 KV/m for GaAs.
    ● Considerable heat is generated in the diode, hence it should be
    provided with a heat sink (Cu-stud).
    ● P-type GaAs does not exhibit gunn effect.
    Construction Of Gunn Diode
    ● Gunn diode is a bulk device. Does not
    contain any junctions.
    ● It is a single slice of n-type GaAs.
    ● GaAs is grown epitaxially onto a Cu or
    Au plated Mb electrode.
    ● Source Material: Tri-methyl gallium
    and arsenic
    ● It is doped with Si, Te or Se to make it
    n-type.
    ● They have metal contacts- anode and
    cathode.
    ● Commercial gunn diodes are
    encapsulated in packages.

    ❏ Substrate - highly doped


    ❏ Top layer - moderately doped
    ❏ Middle layer - lightly doped (active layer)

    Substrate doping density n = 1.3x10^18 cm-


    ³. Thickness varies according to the
    frequency required.

    ● GaAs for frequencies up to 200 GHz.


    ● GaN can reach up to 3 THz.
    MODES OF OPERATION

    Gunn mode or Transit time mode.


    The LSA mode (or limited space charge
    accumulation).
    GUN MODE (or) TT MODE

    o In this mode, voltage V applied the diode so as to set up a electric field


    E greater than the threshold field .
    o During the process a bunch of electrons called Accumulation layer
    starts moving from left to right of the sample .
    o The time taken for the accumulation layer to travel the length of the
    specimen of GaAs is so less that its reciprocal gives the frequency of
    oscillations in the microwave range .
    o The time taken for the accumulation layer to travel down the length of
    the piece is called Transit-time.
    LSA MODE

     For LSA mode of operation , the gunn diode works as a part of a resonant circuit .
     The resonant circuit is tuned to of frequency several times greater than that of the
    TT mode so that dipole domains do not have sufficient time to form and the circuit
    operates as a negative resistance oscillator when the dc voltage is adjusted to a
    value greater than threshold voltage and nearly at the mid-point of the negative
    resistance region .
     The resistance load RL is adjusted to a value of above 20% greater than the
    maximum negative resistance value of the device to enable oscillations to start
    and steady .
     The peak to peak amplitude of the microwave 0scillations is approximately equal
    to the voltage range in the negative resistance region .
    Quenched domain mode :
    If the resonant circuit is tuned to a value slightly above that of the TT mode , the
    dipole domain will be quenched before it arrives at the anode by the negative
    swing of the oscillations voltage but the gunn diode will operate mostly like gunn
    mode . This mode of operation is called quenched domain mode .

    Delayed mode :
    If the resonator is tuned below that of the gunn mode , the dipole domains will
    arrive the at the anode well in time but the formation of a new dipole domain will
    be delayed until the oscillation voltage increases above the threshold value . This
    type of operating mode is called the delayed mode .
    LSA MODE
    DIFFERENCES BETWEEN PN JUNCTION AND
    GUNN DIODE
    P N JUNCTION GUNN DIODE
     It consists of P & N type  It only consists of N type
    semiconductor material . semiconductor material .
     It has N+ n N+ material. No
     It has P type , N type and depletion depletion region is formed .
    region between these materials.
     Symbol
     Symbol
    Applications
     A Gunn diode can be used to amplify signals because of the apparent "negative
    resistance". Gunn diodes are commonly used as a source of high frequency and high
    power signals .
     Sensors and measuring Instruments

    ○ Anti-lock brakes

    ○ Sensors for monitoring the flow of traffic

    ○ Distance traveled" recorders

    ○ Traffic signal controllers


    Automatic door openers
    Car speed detectors
    Sensors to avoid derailment of trains
    Radio amateur use
    Gun oscillator
    Thanks!

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