Group 5 members for the presentation on optical detectors include:
- R195256C DOMA JOSEPH JOSHUA ELISHA
- R195292M DONGO CHRIS TAKWANA
- R195245C DUBE TAKUNDA SYLVESTER
- R195298C GRAND CRISTOPHER ,SANTA
- R197128U GWANDU KUDZAI
The document then discusses the principle of operation, responsivity, and noise of various optical detectors like photodiodes. It describes the structure, working, and applications of different types of photodiodes including PN photodiode, PIN photodiode, Schottky
Group 5 members for the presentation on optical detectors include:
- R195256C DOMA JOSEPH JOSHUA ELISHA
- R195292M DONGO CHRIS TAKWANA
- R195245C DUBE TAKUNDA SYLVESTER
- R195298C GRAND CRISTOPHER ,SANTA
- R197128U GWANDU KUDZAI
The document then discusses the principle of operation, responsivity, and noise of various optical detectors like photodiodes. It describes the structure, working, and applications of different types of photodiodes including PN photodiode, PIN photodiode, Schottky
Group 5 members for the presentation on optical detectors include:
- R195256C DOMA JOSEPH JOSHUA ELISHA
- R195292M DONGO CHRIS TAKWANA
- R195245C DUBE TAKUNDA SYLVESTER
- R195298C GRAND CRISTOPHER ,SANTA
- R197128U GWANDU KUDZAI
The document then discusses the principle of operation, responsivity, and noise of various optical detectors like photodiodes. It describes the structure, working, and applications of different types of photodiodes including PN photodiode, PIN photodiode, Schottky
Group 5 members for the presentation on optical detectors include:
- R195256C DOMA JOSEPH JOSHUA ELISHA
- R195292M DONGO CHRIS TAKWANA
- R195245C DUBE TAKUNDA SYLVESTER
- R195298C GRAND CRISTOPHER ,SANTA
- R197128U GWANDU KUDZAI
The document then discusses the principle of operation, responsivity, and noise of various optical detectors like photodiodes. It describes the structure, working, and applications of different types of photodiodes including PN photodiode, PIN photodiode, Schottky
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GROUP 5 MEMBERS
• R195256C DOMA JOSEPH JOSHUA ELISHA
• R195292M DONGO CHRIS TAKWANA • R195245C DUBE TAKUNDA SYLVESTER • R195298C GRAND CRISTOPHER ,SANTA • R197128U GWANDU KUDZAI OPTICAL DETECTORS (2) Prerequisite(Group 4’s presentation) -Detectors of optical signals: principle of operation; responsivity; bandwidth; noise PHOTODIODES • It is a two terminal device used to detect light signal • It is a type of photodetector capable of converting light energy into electrical energy in either current or voltage, depending upon the mode of operation. • They are used for detection of optical signals and for conversion of optical power to electrical power. • Sometimes it is also called as photo-detector, a light detector, and photo sensor • This device can be used in three modes: photovoltaic as a solar cell, reversed– biased as a photo detector, and forward– biased as an LED. STRUCTURE How it operates as a photo detector? • Photodiode is reversed–biased to operate as a photo detector • Once light is injected, due to low level injection at the junction, there exists generated carriers • But to drift those carriers towards load, we need electric force • If that force is forward bias force then doping currents(mA) dominates photo currents ,whereas if the force is due to reverse bias, then photocurrents(uA) dominate thermal currents based on intensity of light. MATERIALS
• Photodiodes can be manufactured from a variety of materials including silicon,
germanium and indium gallium • Each material uses different properties for cost benefit ,increased sensitivity, wavelength range, low noise levels, or even response speed • Silicon is the most favoured material for a photodiode. With a band gap of 1.1 eV, its peak sensitivity is in I.R. between 800 to 950 nm. The sensitivity drops at shorter wavelength. • In order to increase sensitivity at shorter wavelength, the width of the p-layer should be smaller MATERIALS ELCTROMAGNETIC SPECTRUM WAVELENGTH RANGE (NM)
SILICON 190-1110
GERMANIUM 400-1700
INDIUM GALLIUM ARSENIDE 800-2600
LEAD SUFIDE 100-3500
CROSS SECTION OF THE SILICON PHOTODIODE PHOTODIODE CONSTRUCTION • N type silicon is the starting material. A thin "p" layer is formed on the front surface of the device by thermal diffusion or ion implantation of the appropriate doping material (usually boron). • The interface between the "p" layer and the "n" silicon is known as a p-n junction. Small metal contacts are applied to the front surface of the device and the entire back is coated with a contact metal. • The back contact is the cathode, the front contact is the anode. The active area is coated with either silicon nitride, silicon monoxide or silicon dioxide for protection and to serve as an anti- reflection coating. • The thickness of this coating is optimized for particular irradiation wavelengths. As an example, a Centro Vision Series 5-T photodiode has a coating which enhances its response to the blue part of the spectrum. At the PN junction there will a concentration gradient that causes electrons to diffuse into the p-layer and holes to diffuse into the n-layer. This diffusion results in an opposing electrical potential, often referred to as an internal bias (depletion region). In a generic p-n photodiode, light enters the device through the thin p-type layer. Absorption causes light intensity to drop exponentially with penetration depth. Any photons absorbed in the depletion region produce charge carriers that are immediately separated and swept across the junction by the natural internal bias. Eventually there will be the movement of the charge carriers. This movement of charge carriers across the junction upsets the electrical balance and produces a small photocurrent, which can be detected at the electrodes. In many applications it is desirable to maximize the thickness of the depletion region. For example, device response is faster when most of the charge carriers are created in the depletion region. This also increases the quantum efficiency of the device, since most charge carriers will not have the opportunity to recombine. The quantum efficiency is defined as the ratio of the photocurrent in electrons to incident light intensity in photons. HETEROSTRUCTURES • DEFINITIONS • Heterosructure: • A heterostructure is a semiconductor structure in which the chemical composition changes with position. • The combination of multiple heterojunctions together in a device. • Heterojunction: • Is an interface between two dissimilar semicondutors. HETEROJUNCTION| TYPES Straddling gap (Type I) Staggered gap (Type II) Broken gap (Type III) HETEROJUNCTION| TYPES HETEROSTRUCTURES| DESIGNING CONSIDERATIONS Choice of the surface terminations that are interfaced. Nature of the chemical bonds. The occurrence of charge transfer at the interface. PRACTICAL EXAMPLE| DH LED STRUCTURE | DH LED WORKING OPERATION DH LED STRUCTURE | DH LED WORKING OPERATION As shown thin layer of GaAs is sandwiched between two layers of AlGaAs. GaAs is lightly doped and has narrower bandgap (Eg1) of about 1.43 eV. AlGaAs layers have wider bandgap (Eg2) of about 2.1 Ev. When forward bias is applied through its top and bottom contacts as shown in the figure, electrons are injected from highly doped (n+) AlGaAs layer to central active (p-) GaAs layer. DH LED STRUCTURE | DH LED WORKING OPERATION The injected electrons are trapped within the middle layer due to double heterojunction potential barriers (Eg2 > Eg1) existing on both the sides of the middle layer. The figure depicts energy band diagram when it is forward biased. Electrons are forced to recombine with the holes without too much diffusion from interfaces. They recombine radiatively with energy equal to the band gap of GaAs. As recombination between electrons and holes is limited to narrower central part, internal quantum efficiency of such LED is higher compare to single junction LED. COMMON TYPES OF PHOTODIODES 1. P-N photodiode 2. Pin photodiode 3. Schottky Photodiode 4. Avalanche photodiode PIN PHOTODIODE • This diode has intrinsic layer sandwitched in between two highly doped p type and n type layers • It gives performance improvement compared to PN photo diode • PIN diode has larger depletion region ADVANTAGES AND DISADVANTAGES OF PIN PHOTO DIODE • ADVANTAGES 1. Very low reverse bias is necessary 2. High quantum efficiency 3. A larger bandwidth can be obtained 4. Lower noise performance • DISADVANTAGES 1. It does not amplify the signal AVALANCHE PHOTODIODE • In conventional photodiodes and PIN photodiodes Output current is very small (100uA) • This is because these photodiodes gain is less than 1. • So the APD is used to obtain high current and high gain OPERATING PRINCIPLE AVALANCHE PHOTODIODE • Reverse bias is applied near to breakdown voltage • Incident light will produce electron hole pairs • These carrier will travel with their saturation velocity • As velocity is maximum, these carriors will collide with other atoms • So new electrons hole pairs are generated • These new carriors also travel along with initial carrier • The increase in carriers will increase current • This process of generating more number of carriers is called impact ionization ADVANTAGES AND DISADVANTAGES OF AVALANCHE PHOTODIODE • ADVANTAGES 1. Avalanche gain • DISADVANTAGES 1. High operating voltage is required 2. At high voltage noise is high 3. Avalanche means output is not linear COMPARISON BETWEEN PIN PHOTODIODE AND AVALANCHE PHOTODIODE Parameters PIN photodiode Avalanche photodiode Gain Gain < 1 More gain provided Response time Very less More Sensitivity Less sensitive Highly sensitive Output current Less output current More output current Reverse bias voltage Very low reverse bias voltage Reverse bias voltage nearer to breakdown voltage Noises Less More
Temperature stability Good Poor
ADVANTAGES OF PHOTODIODE • Excellent linearity of output current with respect to incident light • Low noise • It is highly sensitive to the light. • The speed of operation is very high. • Wide spectral response • Compact and lightweight • Long life • No high voltage required DISADVANTAGES OF PHOTODIODE • Small active area • Rapid increase in dark current and it depends on temperature. • Require amplification at low illumination level. • Photodiode characteristics are temperature dependent and have poor temperature stability. APPLICATION OF PHOTODIODE • Photodiodes are used in optical communication system. • Photodiodes are used in electronics devices like smoke detectors, compact disc players, andthe receivers for infrared remote control devices used to control equipment from televisions to air conditioners.. • Photodiodes are often used for accurate measurement of light intesity in science and industry. • It is used in solar cell panels. • They are also widely used in various medical applications, such as detectors for computer tomography, instruments to analyze samples, and pulse oximeters. THE END THANK YOU