Solid State Microwave Devices - Unit III
Solid State Microwave Devices - Unit III
Solid State Microwave Devices - Unit III
• The output frequency is equal to the sum of signal and pump frequency
• There is no power flow in parametric device at frequency other than fs, fp
or f0 (Manley Rowe Power Relation)
Schottky Diode
p-i-n diode
IMPATT diode and Read diode comes from the same family
TRAPATT (Trapped Plasma Avalanche
Triggered Transit) Diode
TRAPATT (Trapped Plasma Avalanche
Triggered Transit) Diode
• The high field avalanche zone propagates
through the diode and fills the depletion
layer with dense plasma of electrons and
holes that become trapped in low field
region behind the zone.
• The difference from IMPATT diode is that
because of the doping the impact
ionization continues for a longer period,
creating plasma of carriers.
BARITT (Barrier Injected Transit Time)
Diode
Energy band
under unbiased
condition
Energy band
under biased
condition
BARITT (Barrier Injected Transit Time)
Diode
• A crystal of n-type silicon wafer is
sandwiched between two P type Schottky
barrier contacts.
• It can also be considered as metal-n-metal
structure.
• It has a longer drift region.
• The Schottky barrier injects hole into the
n-type region
BARITT (Barrier Injected Transit Time)
Diode
• The oscillations are caused due to
– the rapid increase of carrier injection
process caused by decreasing potential
barrier of the forward biased metal-
semiconductor contact.
– 3π/2 transit angle of the injected carrier
that traverses the semiconductor
depletion layer.