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    Features: Elektronische Bauelemente 2A, 50V P Plastic Encapsulated Transistor

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    Luis Figueroa
    1) The 2SC2655L is a low saturation voltage (VCE(sat)=0.5V max), high speed switching time (tstg=1μs typ) NPN bipolar transistor in a TO-92L plastic package. 2) It has an absolute maximum collector-emitter voltage of 50V and continuous collector current of 2A, and is classified based on its DC current gain hFE range as either 70-140 (type -O) or 120-240 (type -Y). 3) Key electrical characteristics include a breakdown voltage of 50V minimum, saturation voltage of 0.5V maximum, and transition frequency of 100MHz typical.

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    Features: Elektronische Bauelemente 2A, 50V P Plastic Encapsulated Transistor

    Uploaded by

    Luis Figueroa
    35 views2 pages
    1) The 2SC2655L is a low saturation voltage (VCE(sat)=0.5V max), high speed switching time (tstg=1μs typ) NPN bipolar transistor in a TO-92L plastic package. 2) It has an absolute maximum collector-emitter voltage of 50V and continuous collector current of 2A, and is classified based on its DC current gain hFE range as either 70-140 (type -O) or 120-240 (type -Y). 3) Key electrical characteristics include a breakdown voltage of 50V minimum, saturation voltage of 0.5V maximum, and transition frequency of 100MHz typical.

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    2SC2655L

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    1) The 2SC2655L is a low saturation voltage (VCE(sat)=0.5V max), high speed switching time (tstg=1μs typ) NPN bipolar transistor in a TO-92L plastic package. 2) It has an absolute maximum collector-emitter voltage of 50V and continuous collector current of 2A, and is classified based on its DC current gain hFE range as either 70-140 (type -O) or 120-240 (type -Y). 3) Key electrical characteristics include a breakdown voltage of 50V minimum, saturation voltage of 0.5V maximum, and transition frequency of 100MHz typical.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    35 views2 pages

    Features: Elektronische Bauelemente 2A, 50V P Plastic Encapsulated Transistor

    Uploaded by

    Luis Figueroa
    1) The 2SC2655L is a low saturation voltage (VCE(sat)=0.5V max), high speed switching time (tstg=1μs typ) NPN bipolar transistor in a TO-92L plastic package. 2) It has an absolute maximum collector-emitter voltage of 50V and continuous collector current of 2A, and is classified based on its DC current gain hFE range as either 70-140 (type -O) or 120-240 (type -Y). 3) Key electrical characteristics include a breakdown voltage of 50V minimum, saturation voltage of 0.5V maximum, and transition frequency of 100MHz typical.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2SC2655L

    2A , 50V
    Elektronische Bauelemente P Plastic Encapsulated Transistor

    RoHS Compliant Product


    A suffix of “-C” specifies halogen & lead-free

    TO-92L
    FEATURES G H
     Low saturation voltage：VCE(sat)=0.5V(Max)(IC=1A)
    1 Emitter
     High speed switching time：tstg=1µs(Typ.) 2 Collector
    3 Base
    J
    CLASSIFICATION OF hFE (1) A D
    Product-Rank 2SC2655L-O 2SC2655L-Y
    Range 70-140 120-240

    E C F

    Collector
    2
    Millimeter Millimeter
    REF. REF.
    Min. Max. Min. Max.
    A 4.70 5.10 F 0.35 0.45
    3
    B 7.80 8.20 G 1.27 TYP.
    Base
    C 13.80 14.20 H 1.28 1.58
    D 3.70 4.10 J 2.44 2.64
    1 E 0.35 0.55 K 0.60 0.80
    Emitter
    ABSOLUTE MAXIMUM RATINGS (TA =25°C unless otherwise specified)
    Parameter Symbol Rating Unit
    Collector to Base Voltage VCBO 50 V
    Collector to Emitter Voltage VCEO 50 V
    Emitter to Base Voltage VEBO 5 V
    Collector Current - Continuous IC 2 A
    Collector Power Dissipation PC 0.9 W
    Junction, Storage Temperature TJ, TSTG -55~150 °C

    ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)


    Parameter Symbol Min. Typ. Max. Unit Test Conditions
    Collector to Base Breakdown Voltage V(BR)CBO 50 - - V IC=100µA, IE=0
    Collector to Emitter Breakdown Voltage V(BR)CEO 50 - - V IC=10mA, IB=0
    Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=100µA, IC=0
    Collector Cut-Off Current ICBO - - 1 µA VCB=50V, IE=0
    Emitter Cut-Off Current IEBO - - 1 µA VEB=5V, IC=0
    hFE (1) 70 - 240 VCE=2V, IC=0.5A
    DC Current Gain
    hFE (2) 40 - - VCE=2V, IC=1.5A
    Collector to Emitter Saturation Voltage VCE(sat) - - 0.5 V IC=1A, IB=0.05A
    Base to Emitter Saturation Voltage VBE(sat) - - 1.2 V IC=1A, IB=0.05A
    Transition Frequency fT - 100 - MHz VCE=2V, IC=0.5A
    Collector Output Capacitance Cob - 30 - pF VCB=10V, IE=0, f=1MHz
    Turn-on Time Ton - 0.1 - VCC=30V
    Switch Time Storage Time Ts - 1 - µs IB1= -IB2=0.05A
    Fall Time Tf - 0.1 - IC=1A

    http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

    24-Jul-2017 Rev. A Page 1 of 2


    2SC2655L
    2A , 50V
    Elektronische Bauelemente P Plastic Encapsulated Transistor

    CHARACTERISTIC CURVES

    http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

    24-Jul-2017 Rev. A Page 2 of 2

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