GunnD Gunn Diodes Are Also Known As Transferred Electron Devices

Gunn diodes are also known as transferred electron devices, TED, are widely used in microwave RF applications for
frequencies between 1 and 100 GHz. Gunn diode basics The Gunn diode is a unique component - even though it is called a diode, it does not contain a PN diode junction. The Gunn diode or transferred electron device can be termed a diode because it does have two electrodes. It depends upon the bulk material properties rather than that of a PN junction. The PRINCIPLE behind is the transferred electron effect . The Gunn diode operation depends on the fact that it has a voltage controlled negative resistance. Gunn diode symbol for circuit diagrams The Gunn diode symbol used in circuit diagrams varies. Often a standard diode is seen in the diagram, however this form of Gunn diode symbol does not indicate the fact that the Gunn diode is not a PN junction. Instead another symbol showing two filled in triangles with points touching is used as shown below.
Gunn diode symbol for circuit diagrams Gunn diode construction Gunn diodes are fabricated from a single piece of n-type semiconductor. The most common materials are gallium Arsenide, GaAs and Indium Phosphide, InP. However other materials including Ge, CdTe, InAs, InSb, ZnSe and others have been used. The device is simply an n-type bar with n+ contacts. It is necessary to use n-type material because the transferred electron effect is only applicable to electrons and not holes found in a p-type material. Within the device there are three main areas, which can be roughly termed the top, middle and bottom areas.
A discrete Gunn diode with the active layer mounted onto a heatsink for efficient heat transfer The active region is between a few microns and a few hundred micron thick. This active layer has a doping level between 1014cm-3 and 1016cm-3 - this is considerably less than that used for the top and bottom areas of the device. The thickness will vary according to the frequency required. Both top and bottom areas of the device are heavily doped to give n+ material. This provides the required high conductivity areas that are needed for the connections to the device.The base also acts as a heat sink which is critical for the removal of heat. The connection to the other terminal of the diode is made via a gold connection deposited onto the top surface. Gold is required because of its relative stability and high conductivity. During manufacture there are a number of mandatory requirements for the devices to be successful - the material must be defect free and it must also have a very uniform level of doping. Working The operation of the Gunn diode can be explained in basic terms. When a voltage is placed across the device, most of the voltage appears across the inner active region. As this is particularly thin this means that the voltage gradient that exists in this region is exceedingly high. The device exhibits a negative resistance region on its V/I curve as seen below. This negative resistance area enables the Gunn diode to amplify signals. This can be used both in amplifiers and oscillators. However Gunn diode oscillators are the most commonly found.
Gunn diode characteristic This negative resistance region means that the current flow in diode increases in the negative resistance region when the voltage falls - the inverse of the normal effect in any other positive resistance element. This phase reversal enables the Gunn diode to act as an amplifier and oscillator. At microwave frequencies, it is found that the dynamic action of the diode incorporates elements resulting from the thickness of the active region. When the voltage across the active region reaches a certain point a current is initiated and travels across the active region. During the time when the current pulse is moving across the active region the potential gradient falls preventing any further pulses from forming. Only when the pulse has reached the far side of the active region will the potential gradient rise, allowing the next pulse to be created. It can be seen that the time taken for the current pulse to traverse the active region largely determines the rate at which current pulses are generated, and hence it determines the frequency of operation. To see how this occurs, it is necessary to look at the electron concentration across the active region. Under normal conditions the concentration of free electrons would be the same regardless of the distance across the active diode region. However a small perturbation may occur resulting from noise from the current flow, or even external noise - this form of noise will always be present and acts as the seed for the oscillation. This grows as it passes across the active region of the Gunn diode.
Gunn diode operation The increase in free electrons in one area cause the free electrons in another area to decrease forming a form of wave. It also results in a higher field for the electrons in this region. This higher field slows down these electrons relative to the remainder. As a result the region of excess electrons will grow because the electrons in the trailing path arrive with a higher velocity. Similarly the area depleted of electrons will also grow because the electrons slightly ahead of the area with excess electrons can move faster. In this way, more electrons enter the region of excess making it larger, and more electrons leave the depleted region because they too can move faster. In this way the perturbation increases.
Gunn diode operation - electrons in the peak move more slowly The peak will traverse across the diode under the action of the potential across the diode, and growing as it traverses the diode as a result of the negative resistance. A clue to the reason for this unusual action can be seen if the voltage and current curves are plotted for a normal diode and a Gunn diode. For a normal diode the current increases with voltage, although the relationship is not linear. On the other hand the current for a Gunn diode starts to increase, and once a certain voltage has been reached, it starts to fall before rising again. The region where it falls is known as a negative resistance region, and this is the reason why it oscillates.
Applications The Gunn diode is most commonly used for generating microwave RF signals these circuits may also be called a transferred electron oscillator or TEO. The Gunn diode may also be used for an amplifier in what may be known as a transferred electron amplifier or TEA.

GunnD Gunn Diodes Are Also Known As Transferred Electron Devices

Uploaded by

Copyright:

Available Formats

GunnD Gunn Diodes Are Also Known As Transferred Electron Devices

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

GunnD Gunn Diodes Are Also Known As Transferred Electron Devices

Uploaded by

Copyright:

Available Formats

Gunn diodes are also known as transferred electron devices, TED, are widely used in microwave RF applications for

You might also like