TK4A60D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

(-MOS)

TK4A60D
Switching Regulator Applications

Unit: mm

Low drain-source ON-resistance: RDS (ON) = 1.4 (typ.)

High forward transfer admittance: Yfs = 2.5 S (typ.)
Low leakage current: IDSS = 10 A (max) (VDS = 600 V)
Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

600

Gate-source voltage

VGSS

30

DC

(Note 1)

ID

Pulse

(Note 1)

IDP

16

Drain power dissipation (Tc = 25C)

PD

35

Single pulse avalanche energy

(Note 2)

EAS

187

mJ

Avalanche current

IAR

Repetitive avalanche energy (Note 3)

EAR

3.5

mJ

JEITA

Channel temperature

Tch

150

TOSHIBA

Storage temperature range

Tstg

55 to 150

Weight : 1.7 g (typ.)

Drain current

A
1: Gate
2: Drain
3: Source

JEDEC

SC-67
2-10U1B

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Internal Connection

Thermal Characteristics
Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

3.57

C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

C/W

Note 1: Ensure that the channel temperature does not exceed 150C.

Note 2: VDD = 90 V, Tch = 25C (initial), L = 20.5 mH, RG = 25 , IAR = 4 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.

Start of commercial production

2008-10

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TK4A60D
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = 30 V, VDS = 0 V

Drain cut-off current

IDSS

VDS = 600 V, VGS = 0 V

10

Drain-source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

600

Vth

VDS = 10 V, ID = 1 mA

2.4

4.4

Gate threshold voltage

Drain-source ON-resistance

RDS (ON)

VGS = 10 V, ID = 2 A

1.4

1.7

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 2 A

0.7

2.5

Input capacitance

Ciss

600

Reverse transfer capacitance

Crss

Output capacitance

Coss

70

18

40

Rise time

VDS = 25 V, VGS = 0 V, f = 1 MHz

Turn-on time

ton
tf

Turn-off time

VOUT

RL = 100

50

Switching time
Fall time

ID = 2 A

10 V
VGS
0V

tr

ns

55

12

VDD 200 V

toff

Duty 1%, tw = 10 s

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

VDD 400 V, VGS = 10 V, ID = 4 A

pF

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

(Note 1)

IDR

(Note 1)

IDRP

16

Continuous drain reverse current

Pulse drain reverse current
Forward voltage (diode)

VDSF

IDR = 4 A, VGS = 0 V

1.7

Reverse recovery time

trr

IDR = 4 A, VGS = 0 V,

1200

ns

Reverse recovery charge

Qrr

dIDR/dt = 100 A/s

Marking
Note 4: A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

K4A60D

Part No.
(or abbreviation code)
Lot No.

Note 4

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.

2013-11-01

TK4A60D
ID VDS
COMMON SOURCE
Tc = 25C
PULSE TEST

10

10
8

6.75
3
6.5
2

6.25
6

5.5

COMMON SOURCE
Tc = 25C
PULSE TEST

7.5

(A)

ID VDS
8

DRAIN CURRENT ID

DRAIN CURRENT ID

(A)

7.25
7

6.5
2

6
VGS = 5.5 V

VGS = 5 V
0
0

DRAIN-SOURCE VOLTAGE

VDS

0
0

10

(V)

10

20

DRAIN-SOURCE VOLTAGE

ID VGS
VDS (V)
DRAIN-SOURCE VOLTAGE

(A)
DRAIN CURRENT ID

COMMON SOURCE
VDS = 20 V
PULSE TEST

6
25
4

100

Tc = 55 C

0
0

GATE-SOURCE VOLTAGE

VGS

10

10

4A

4
2A
2

ID = 1 A

0
0

DRAIN-SOURCE ON RESISTANCE
RDS (ON) ()

FORWARD TRANSFER ADMITTANCE

Yfs (S)

12

16

VGS

20

(V)

RDS (ON) ID

COMMON SOURCE
VDS = 10 V
PULSE TEST

Tc = 55 C
25

0.1
0.1

GATE-SOURCE VOLTAGE

(V)

10

100

(V)

COMMON SOURCE
Tc = 25C
PULSE TEST

Yfs ID
10

VDS

40

VDS VGS

10

30

DRAIN CURRENT ID

COMMON SOURCE
Tc = 25C
PULSE TEST

0.1
0.1

10

(A)

VGS = 10, 15 V

DRAIN CURRENT ID

10

(A)

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TK4A60D
RDS (ON) Tc
COMMON SOURCE
VGS = 10 V
PULSE TEST

2
4

ID = 1 A

COMMON SOURCE
Tc = 25C
PULSE TEST

40

40

80

CASE TEMPERATURE

120

Tc

0.1
0

160

(C)

0.2

0.4

CAPACITANCE VDS

GATE THRESHOLD VOLTAGE

Vth (V)

(V)

Coss

COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25C

Crss

10

COMMON SOURCE
1 VDS = 10 V
ID = 1 mA
PULSE TEST
0
80

100

VDS

(V)

40

VDS (V)
DRAIN-SOURCE VOLTAGE

40

30

20

10

CASE TEMPERATURE

80

120

Tc

160

(C)

DYNAMIC INPUT / OUTPUT

CHARACTERISTICS

50

80

40

CASE TEMPERATURE

PD Tc

40

120

Tc

160

(C)

500

20
VDS

400

VDD = 100 V

300

12

400

200
VGS
100

COMMON SOURCE
ID = 4 A
Tc = 25C
PULSE TEST

Qg

0
20

16

12

TOTAL GATE CHARGE

16

200

(V)

CAPACITANCE

(pF)

Ciss

DRAIN-SOURCE VOLTAGE

DRAIN POWER DISSIPATION

PD (W)

VDS

1.2

Vth Tc

100

0
0

1.0

1000

1
0.1

0.8

DRAIN-SOURCE VOLTAGE

10000

10

0.6

VGS

0
80

VGS = 0 V

10

GATE-SOURCE VOLTAGE

IDR VDS
10

DRAIN REVERSE CURRENT

IDR (A)

DRAIN-SOURCE ON RESISTANCE
RDS (ON) ( )

(nC)

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TK4A60D

NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)

rth tw
10

Duty=0.5
0.2
0.1

0.1

0.05
PDM

0.02

SINGLE PULSE

0.01

0.01

Duty = t/T
Rth (ch-c) = 3.57 C/W
0.001
10

100

1m

10m

PULSE WIDTH

100m

tw (s)

EAS Tch

SAFE OPERATING AREA

100

250

ID max (pulsed) *

AVALANCHE ENERGY
EAS (mJ)

100 s *

10
1 ms *

ID

(A)

ID max (continuous)

DRAIN CURRENT

1
DC operation
Tc = 25C

0.1

PULSE Tc = 25C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
1

10

200

150

100

50

0
25

*: SINGLE NONREPETITIVE

0.01

0.001

10

50

75

100

125

150

CHANNEL TEMPERATURE (INITIAL)

Tch(C)
VDSS max
100

DRAIN-SOURCE VOLTAGE

15 V

1000

VDS

(V)

BVDSS
IAR

15 V
VDD

TEST CIRCUIT
RG = 25
VDD = 90 V, L = 20.5 mH

VDS

WAVEFORM
AS =

1
B VDSS

L I2
B

V
VDSS
DD

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TK4A60D
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
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Do not use or otherwise make available Product or related software or technology for any military purposes, including without
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technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

2013-11-01