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    DC DC Converter, Relay Drive and Motor Drive Applications: Absolute Maximum Ratings

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    housseinsweif
    This document provides specifications for the Toshiba 2SK2611 field effect transistor. It is a silicon n-channel MOS transistor intended for use in DC-DC converters, relay drives, and motor drives. The transistor has a typical on-resistance of 1.1 ohms and forward transfer admittance of 7.0 siemens. The document provides detailed maximum ratings, electrical characteristics, thermal characteristics and application information for the transistor.

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    DC DC Converter, Relay Drive and Motor Drive Applications: Absolute Maximum Ratings

    Uploaded by

    housseinsweif
    165 views6 pages
    This document provides specifications for the Toshiba 2SK2611 field effect transistor. It is a silicon n-channel MOS transistor intended for use in DC-DC converters, relay drives, and motor drives. The transistor has a typical on-resistance of 1.1 ohms and forward transfer admittance of 7.0 siemens. The document provides detailed maximum ratings, electrical characteristics, thermal characteristics and application information for the transistor.

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    k2611

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    This document provides specifications for the Toshiba 2SK2611 field effect transistor. It is a silicon n-channel MOS transistor intended for use in DC-DC converters, relay drives, and motor drives. The transistor has a typical on-resistance of 1.1 ohms and forward transfer admittance of 7.0 siemens. The document provides detailed maximum ratings, electrical characteristics, thermal characteristics and application information for the transistor.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    165 views6 pages

    DC DC Converter, Relay Drive and Motor Drive Applications: Absolute Maximum Ratings

    Uploaded by

    housseinsweif
    This document provides specifications for the Toshiba 2SK2611 field effect transistor. It is a silicon n-channel MOS transistor intended for use in DC-DC converters, relay drives, and motor drives. The transistor has a typical on-resistance of 1.1 ohms and forward transfer admittance of 7.0 siemens. The document provides detailed maximum ratings, electrical characteristics, thermal characteristics and application information for the transistor.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

    2SK2611

    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSIII)

    2SK2611
    DCDC Converter, Relay Drive and Motor Drive Applications
    Low drainsource ON resistance High forward transfer admittance Low leakage current Enhancementmode : RDS (ON) = 1.1 (typ.) : |Yfs| = 7.0 S (typ.) Unit: mm

    : IDSS = 100 A (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

    Absolute Maximum Ratings (Ta = 25C)


    Characteristics Drainsource voltage Draingate voltage (RGS = 20 k) Gatesource voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 30 9 27 150 663 9 15 150 55~150 Unit V V V A A W mJ A mJ C C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE

    Pulse (Note 1)

    Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

    JEDEC JEITA TOSHIBA

    SC-65 2-16C1B

    Weight: 4.6 g (typ.)

    Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
    temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

    Thermal Characteristics
    Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (chc) Rth (cha) Max 0.833 50 Unit C / W C / W

    Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 15 mH, RG = 25 , IAR = 9 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution.

    2006-11-10

    2SK2611
    Electrical Characteristics (Ta = 25C)
    Characteristics Gate leakage current Gatesource breakdown voltage Drain cutoff current Drainsource breakdown voltage Gate threshold voltage Drainsource ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 30 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 15 V, ID = 4 A Min 30 900 2.0 3.0 Typ. 1.1 7.0 2040 45 190 25 Max 10 100 4.0 1.4 pF Unit A V A V V S

    Turnon time Switching time Fall time

    ton

    60

    ns

    tf

    20

    Turnoff time Total gate charge (gatesource plus gatedrain) Gatesource charge Gatedrain (miller) Charge

    toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 9 A

    95 58 32 26

    nC

    SourceDrain Ratings and Characteristics (Ta = 25C)


    Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr IDR = 9 A, VGS = 0 V IDR = 9 A, VGS = 0 V, dIDR / dt = 100 A / s Test Condition Min Typ. 1.6 20 Max 9 27 1.9 Unit A A V s C

    Marking

    TOSHIBA

    K2611

    Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

    2006-11-10

    2SK2611

    2006-11-10

    2SK2611

    2006-11-10

    2SK2611

    RG = 25 VDD = 90 V, L = 15 mH

    EAS =

    B VDSS 1 L I2 B VDSS VDD 2

    2006-11-10

    2SK2611

    RESTRICTIONS ON PRODUCT USE


    The information contained herein is subject to change without notice.

    20070701-EN

    TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customers own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

    2006-11-10

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