K14A55D Toshiba

TK14A55D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
(-MOS)
TK14A55D
Switching Regulator Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.)

High forward transfer admittance: Yfs = 6.5 S (typ.)
Low leakage current: IDSS = 10 A (max) (VDS = 550 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25C)

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
550
Gate-source voltage
VGSS
30
(Note 1)
ID
14
Pulse (t = 1 ms)
(Note 1)
IDP
56
Drain power dissipation (Tc = 25C)
PD
50
Single pulse avalanche energy

(Note 2)
EAS
521
mJ
Avalanche current
IAR
14
Repetitive avalanche energy (Note 3)
EAR
5.0
mJ
JEITA
Channel temperature
Tch
150
TOSHIBA
Storage temperature range
Tstg
55 to 150
Weight: 1.7 g (typ.)
DC
Drain current
A
1: Gate
2: Drain
3: Source
JEDEC
SC-67
2-10U1B
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Internal Connection
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.5
C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
C/W
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: VDD = 90 V, Tch = 25C (initial), L = 4.6 mH, RG = 25 , IAR = 14 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
Downloaded from Elcodis.com electronic components distributor
2008-11-10
TK14A55D
Electrical Characteristics (Ta = 25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = 30 V, VDS = 0 V
Drain cut-off current
IDSS
VDS = 550 V, VGS = 0 V
10
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
550
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
Gate threshold voltage

Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 7 A
0.31
0.37
Forward transfer admittance
Yfs
VDS = 10 V, ID = 7 A
1.8
6.5
Input capacitance
Ciss
2300
VDS = 25 V, VGS = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
Turn-on time
ton
tf
Turn-off time
VOUT
RL =
29
50
Switching time
Fall time
ID = 7 A
10 V
VGS
0V
tr
VDD 200 V
Duty 1%, tw = 10 s
toff
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDD 400 V, VGS = 10 V, ID = 14 A
10
250
50
100
25
140
40
25
15
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
(Note 1)
IDR
14
(Note 1)
IDRP
56
Continuous drain reverse current

Pulse drain reverse current
Forward voltage (diode)
VDSF
IDR = 14 A, VGS = 0 V
1.7
Reverse recovery time
trr
IDR = 14 A, VGS = 0 V,
1600
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/s
20
Marking
K14A55D
Part No. (or abbreviation code)

Lot No.
A line indicates
Lead(Pb)-Free Finish
2
2008-11-10
TK14A55D
ID VDS
10
COMMON SOURCE
Tc = 25C
PULSE TEST
10
6.5
12
5.5
7
24
VDS
6.5
16
6
8
5.5
VGS = 5 V
0
0
10
DRAIN-SOURCE VOLTAGE
(V)
10
20
ID VGS
VDS (V)
(A)
DRAIN CURRENT ID
24
25
16
100
Tc = 55C
10
GATE-SOURCE VOLTAGE
VGS
10
10
ID = 14 A
7
2
3.5
0
12
16
VGS
20
(V)
RDS (ON) ID
DRAIN-SOURCE ON RESISTANCE
RDS (ON) ()
FORWARD TRANSFER ADMITTANCE

Yfs (S)
GATE-SOURCE VOLTAGE
10
Tc = 55C
25
(V)
(V)
COMMON SOURCE
VDS = 20 V
PULSE TEST
0.1
0.1
VDS
10
100
50
COMMON SOURCE
Tc = 25
PULSE TEST
Yfs ID
100
40
VDS VGS
COMMON SOURCE
VDS = 20 V
PULSE TEST
0
0
30
40
32
COMMON SOURCE
Tc = 25C
PULSE TEST
7.5
32
VGS = 5V
0
0
6.75
(A)
16
ID VDS
40
DRAIN CURRENT ID
DRAIN CURRENT ID
(A)
20
10
DRAIN CURRENT ID
VGS = 10 V, 15 V
0.1
0.1
100
(A)
10
DRAIN CURRENT ID
3
COMMON SOURCE
Tc = 25C
PULSE TEST
100
(A)
2008-11-10
TK14A55D
RDS (ON) Tc
IDR VDS
100
COMMON SOURCE
VGS = 10 V
1.0 PULSE TEST
DRAIN REVERSE CURRENT

IDR (A)
0.8
0.6
ID = 14 A
7
3.5
0.4
0.2
COMMON SOURCE
Tc = 25C
PULSE TEST
10
10
5
3
1
40
40
80
CASE TEMPERATURE
120
Tc
0.1
0
160
(C)
0.4
0.2
CAPACITANCE VDS
GATE THRESHOLD VOLTAGE

Vth (V)
1.4
(V)
100
Crss
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25C
1
10
2
COMMON SOURCE
1 V
DS = 10 V
ID = 1 mA
PULSE TEST
0
80
100
VDS
(V)
VDS (V)
60
40
20
CASE TEMPERATURE
120
Tc
160
(C)
80
120
Tc
160
(C)
20
500
400
VDS
16
VDD = 100 V
300
400 V
8
COMMON SOURCE
ID = 14 A
Tc = 25C
4
PULSE TEST
VGS
100
0
0
12
200 V
200
20
40
TOTAL GATE CHARGE
4
40
DYNAMIC INPUT / OUTPUT

CHARACTERISTICS
80
80
CASE TEMPERATURE
PD Tc
40
40
0
80
60
Qg
(V)
(pF)
C
CAPACITANCE
Coss
DRAIN POWER DISSIPATION

PD (W)
1.2
VDS
Vth Tc
1000
0
0
1.0
5
Ciss
1
0.1
0.8
10000
10
VGS = 0 V
0.6
VGS
0
80
GATE-SOURCE VOLTAGE
DRAIN-SOURCE ON-RESISTANCE
RDS (ON) ( )
1.2
(nC)
2008-11-10
TK14A55D
NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)
rth tw
10
Duty = 0.5
0.2
0.1
0.1
0.05
PDM
0.02
SINGLE PULSE
0.01
0.01
T
Duty = t/T
Rth (ch-c) = 2.5C/W
0.001
10
100
1m
10m
PULSE WIDTH
100m
SAFE OPERATING AREA

100
EAS Tch
600
ID max (pulsed) *
100 s *
500
AVALANCHE ENERGY
EAS (mJ)
ID max (continuous) *
10
ID
(A)
1 ms *
DRAIN CURRENT
1
DC operation
Tc = 25C
0.1
0.001
1
400
300
200
100
0
25
*: SINGLE NONREPETITIVE
0.01
10
tw (s)
50
75
100
125
150
PULSE Tc = 25C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
10
CHANNEL TEMPEATURE (INITIAL)

Tch(C)
VDSS max
100
15 V
1000
VDS
(V)
BVDSS
IAR
15 V
VDD
TEST CIRCUIT
RG = 25
VDD = 90 V, L = 4.6 mH
5
VDS
WAVEFORM
AS =
1
B VDSS
L I2
B
2
VDSS VDD
2008-11-10
TK14A55D
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2008-11-10

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TK14A55D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.)

Absolute Maximum Ratings (Ta = 25C)

Drain power dissipation (Tc = 25C)

Single pulse avalanche energy

Repetitive avalanche energy (Note 3)

Storage temperature range

Weight: 1.7 g (typ.)

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 2: VDD = 90 V, Tch = 25C (initial), L = 4.6 mH, RG = 25 , IAR = 14 A

Gate leakage current

Drain cut-off current

VDS = 550 V, VGS = 0 V

Drain-source breakdown voltage

Gate threshold voltage

Forward transfer admittance

VDS = 25 V, VGS = 0 V, f = 1 MHz

Reverse transfer capacitance

Total gate charge

VDD 400 V, VGS = 10 V, ID = 14 A

Source-Drain Ratings and Characteristics (Ta = 25C)

Continuous drain reverse current

Reverse recovery time

Reverse recovery charge

dIDR/dt = 100 A/s

Part No. (or abbreviation code)

FORWARD TRANSFER ADMITTANCE

DRAIN REVERSE CURRENT

GATE THRESHOLD VOLTAGE

TOTAL GATE CHARGE

DYNAMIC INPUT / OUTPUT

DRAIN POWER DISSIPATION

NORMALIZED TRANSIENT THERMAL

SAFE OPERATING AREA

CHANNEL TEMPEATURE (INITIAL)

RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.

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