Irfz44n PDF
Irfz44n PDF
Irfz44n PDF
H
C
t
N
c
E
u
TRENFET w Prod
Ne
G
TO-220AB
0.185 (4.70)
0.170 (4.31)
0.154 (3.91)
Dia.
0.142 (3.60)
0.415 (10.54)
Max.
0.410 (10.41)
0.350 (8.89)
G
PIN
D
0.603 (15.32)
0.573 (14.55)
0.360 (9.14)
0.330 (8.38)
0.635 (16.13)
0.580 (14.73)
1.148 (29.16)
1.118 (28.40)
0.104 (2.64)
0.094 (2.39)
0.160 (4.06)
0.09 (2.28)
0.560 (14.22)
0.530 (13.46)
0.037 (0.94)
0.026 (0.66)
0.022 (0.56)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.190 (4.83)
Features
0.155 (3.93)
0.134 (3.40)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.102 (2.56)
Dimensions in inches
and (millimeters)
Mechanical Data
Case: JEDEC TO-220AB molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250C/10 seconds, 0.17 (4.3mm) from case
Mounting Torque: 10 in-lbs maximum
Weight: 2.0g
Symbol
Limit
Unit
Drain-Source Voltage
VDS
55
Gate-Source Voltage
VGS
20
ID
49
35
IDM
160
PD
94
EAS
210
mJ
IAR
25
EAR
11
mJ
TJ, Tstg
55 to 175
RJC
1.6
RJA
62
TC = 25C
TC = 100C
TC = 25C
(2)
(1)
Avalanche Current
(1)
C/W
Notes: (1) Repetitive rating; pulse width limited by max. junction temperature
(2) VDD = 25V, starting TJ = 25C, L = 470H, RG = 25, IAS = 25A
5/8/01
IRFZ44N
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (T
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR)DSS
55
16
20
18
22
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance(1)
RDS(on)
VGS(th)
2.0
4.0
gfs
17
78
IDSS
25
IGSS
100
nA
29
40
60
65
11
13
19
34
185
240
85
119
165
210
(1)
Forward Transconductance
Dynamic
Total Gate Charge(1)
Qg
(1)
Gate-Source Charge
Qgs
Qgd
(1)
ID = 25A
td(on)
(1)
Rise Time
VDD = 28V
tr
(1)
td(off)
Fall Time(1)
tf
ID = 25A, RG = 12
RD = 1.1, VGEN = 10V
nC
ns
Input Capacitance
Ciss
VGS = 0V
3223
Output Capacitance
Coss
VDS = 25V
308
Crss
f = 1.0MHZ
135
IS
49
ISM
160
VSD
IS = 25A, VGS = 0V
0.93
1.3
53
ns
93
nC
pF
Source-Drain Diode
Continuous Source Current
(2)
trr
(1)
Qrr
VDD
ton
Switching
Test Circuit
RD
VIN
VOUT
Switching
Waveforms
td(on)
RG
tr
td(off)
tf
90 %
90%
Output, VOUT
VGEN
toff
10%
10%
INVERTED
DUT
90%
50%
Input, VIN
50%
10%
PULSE WIDTH
IRFZ44N
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
Fig. 1 - Output Characteristics
7.0V
6.0V
VDS = 10V
140
10V
80
120
VGS =
100
160
100
5.0V
80
60
4.5V
40
60
40
20
4.0V
20
3.5V
0
0
10
Fig. 4 - Capacitance
4000
0.04
VGS = 4.5V
Ciss
3500
5V
3000
Capacitance (pF)
0.03
6V
0.02
10V
2500
f = 1MHz
VGS = 0V
2000
1500
1000
0.01
Crss
Coss
500
0
0
20
40
60
80
100
120
140
160
10
VDS = 44V
ID = 25A
8
0
10
20
30
40
10
20
30
40
50
0
0
50
60
60
IRFZ44N
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
Fig. 7 On-Resistance
vs. Gate-to-Source Voltage
100
VGS = 0V
RDS(ON) -- On-Resistance ()
I D = 25A
10
0.1
0.03
0.02
0.01
0.01
0
0.2
0.4
0.6
0.8
1.2
1.4
10
82
80
VGS(th) -- Gate-to-Source
Threshold Voltage (V)
78
76
74
72
70
68
2.4
1.6
1.2
66
64
--50 --25
25
50
75
100
125
150
175
0.8
--50 --25
25
50
75
100
125
150
175
IRFZ44N
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
Fig. 10 On-Resistance vs. Junction
Temperature
2.0
VGS = 10V
ID = 25A
D = 0.5
1.8
1.6
1.4
1.2
1
0.8
0.6
--50 --25
25
50
75
100
125
150
0.2
PDM
0.1
0.1
t2
Single Pulse
0.01
0.0001
175
0.001
0.01
0.1
10
1000
800
RDS(ON) Limit
600
400
10
0
s
100
1m
100ms
10
ms
10
DC
200
0
0.0001
Power (W)
t1
0.05
1
0.001
0.01
0.1
10
10
100