AP40T03GS/P

Pb Free Plating Product

Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement D BVDSS 30V

▼ Low Gate Charge RDS(ON) 25mΩ
▼ Fast Switching ID 28A
G
▼ RoHS Compliant
S

Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching, G D
ruggedized device design, low on-resistance and cost-effectiveness. S TO-263(S)

The TO-263
TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP40T03J) are
(AP40T03GP) are
available
available
forfor
low-profile
low-profile
applications.
applications.
G TO-220(P)
D
S
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±25 V
ID@TA=25℃ Continuous Drain Current, VGS @ 10V 28 A
ID@TA=100℃ Continuous Drain Current, VGS @ 10V 24 A
1
IDM Pulsed Drain Current 95 A
PD@TA=25℃ Total Power Dissipation 31.25 W
Linear Derating Factor 0.25 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Thermal Resistance Junction-case Max. 4.0 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W

Data and specifications subject to change without notice 200331053-1/4

AP40T03GS/P

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.032 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=18A - - 25 mΩ
VGS=4.5V, ID=14A - - 45 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=18A - 15 - S
o
IDSS Drain-Source Leakage Current (T j=25 C) VDS=30V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (T j=150 C) VDS=24V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= ±25V - - ±100 nA
2
Qg Total Gate Charge ID=18A - 8.8 - nC
Qgs Gate-Source Charge VDS=20V - 2.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5.8 - nC
2
td(on) Turn-on Delay Time VDS=15V - 6 - ns
tr Rise Time ID=18A - 62 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 16 - ns
tf Fall Time RD=0.83Ω - 4.4 - ns
Ciss Input Capacitance VGS=0V - 655 - pF
Coss Output Capacitance VDS=25V - 145 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 28 A
1
ISM Pulsed Source Current ( Body Diode ) - - 95 A
2
VSD Forward On Voltage Tj=25℃, IS=28A, VGS=0V - - 1.3 V

Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.

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 AP40T03GS/P

90 75

10V
o
T C =25 C 8 .0V
o
T C =150 C 10V
8 .0V

ID , Drain Current (A)

ID , Drain Current (A)

60 6 .0V 50

6 .0V

30 25

V G = 4. 0V V G =4.0V

0 0
0.0 1.0 2.0 3.0 4.0 0.0 1.0 2.0 3.0 4.0

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

70 2.0

I D =14A I D =18A
T C =25 ℃ V G =10V

1.4
Normalized RDS(ON)

50
RDS(ON) (mΩ)

30 0.8

0.2
10
0 5 10 15 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
100 2.5

2.0

10

T j =150 o C T j =25 o C
VGS(th) (V)
IS(A)

1.5

1.0

0.1 0.5
0 0.4 0.8 1.2 1.6 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C )

o

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

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AP40T03GS/P
f=1.0MHz
12 1000

I D =18A C iss
VGS , Gate to Source Voltage (V)

9
V DS =10V
V DS =15V
V DS =20V

C (pF)
C oss
6 100 C rss

0 10
0 3 6 9 12 1 8 15 22 29

Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor = 0.5

Normalized Thermal Response (Rthjc)

0.2

100us
ID (A)

0.1
10 0.1
0.05

PDM
0.02
t
1ms 0.01
T
o
T C =25 C Single Pulse
Duty Factor = t/T
Single Pulse 10ms Peak Tj = PDM x Rthjc + T C
100ms
DC
1 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V
QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

4/4