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AP9T16GH/J
Pb Free Plating Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Low Gate Charge D BVDSS 20V

▼ Capable of 2.5V gate drive RDS(ON) 25mΩ
▼ Single Drive Requirement ID 25A
G
▼ RoHS Compliant
S
Description
The Advanced Power MOSFETs from APEC provide the
G D
designer with the best combination of fast switching, S TO-252(H)
ruggedized device design, ultra low on-resistance and
cost-effectiveness.

G
D
S TO-251(J)

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±16 V
ID@TC=25℃ Continuous Drain Current, V GS @ 4.5V 25 A
ID@TC=100℃ Continuous Drain Current, V GS @ 4.5V 16 A
1
IDM Pulsed Drain Current 90 A
PD@TC=25℃ Total Power Dissipation 25 W
Linear Derating Factor 0.2 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Thermal Resistance Junction-case Max. 5 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W

Data and specifications subject to change without notice 200908052-1/4

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AP9T16GH/J

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.01 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A - - 25 mΩ
VGS=2.5V, ID=5.2A - - 40 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.5 V
gfs Forward Transconductance VDS=5V, ID=18A - 19 - S
IDSS o
Drain-Source Leakage Current (Tj=25 C) VDS=20V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (Tj=150 C) VDS=16V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±16V - - ±100 nA
2
Qg Total Gate Charge ID=18A - 10 16 nC
Qgs Gate-Source Charge VDS=16V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5 - nC
2
td(on) Turn-on Delay Time VDS=10V - 10 - ns
tr Rise Time ID=18A - 98 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 18 - ns
tf Fall Time RD=0.56Ω - 6 - ns
Ciss Input Capacitance VGS=0V - 870 1390 pF
Coss Output Capacitance VDS=20V - 160 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF
Rg Gate Resistance f=1.0MHz - 1.38 - Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=18A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=18A, VGS=0V, - 19 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC

Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.

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100 80

T C =25 o C T C = 150 o C
80 5.0V 5.0V
4.5V 4.5V

ID , Drain Current (A)

60
ID , Drain Current (A)

60

3.5V 40 3.5V
40

20
2.5V 2.5V
20

V G =1.5V V G =1.5V
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

42 1.6

I D = 5.2 A I D =6A
37

T C =25 o C 1.4
V G =4.5V
Normalized RDS(ON)

32
RDS(ON) (mΩ )

1.2

27

1.0

22

0.8
17

12 0.6
0 2 4 6 8 10 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10 2.0

8
1.5
Normalized VGS(th) (V)

6
IS(A)

T j =150 o C T j =25 o C
1.0

0.5
2

0 0.0
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C )

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

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14
f=1.0MHz
10000

I D =18A
12
VGS , Gate to Source Voltage (V)

V DS =10V
V DS =12V
10
V DS =16V

C (pF)
8

1000
C iss
6

2
C oss
C rss
0 100
0 5 10 15 20 25 30 1 5 9 13 17 21 25

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthjc)

Duty factor=0.5
100us

0.2

0.1
ID (A)

10
1ms 0.1

0.05

PDM
0.02
t
T

o
10ms 0.01

T c =25 C 100ms Duty factor = t/T

Single Pulse Peak Tj = PDM x Rthjc + T C
Single Pulse DC
1 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V

QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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