PSMN8R5-60YS

N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

22 July 2015 Product data sheet

1. General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.

2. Features and benefits

• Advanced TrenchMOS provides low RDSon and low gate charge
• High efficiency gains in switching power converters
• Improved mechanical and thermal characteristics
• LFPAK provides maximum power density in a Power SO8 package

3. Applications
• DC-to-DC converters
• Lithium-ion battery protection
• Load switching
• Motor control
• Server power supplies

4. Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 60 V

ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 - - 76 A

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 106 W

Tj junction temperature -55 - 175 °C

Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 15 A; Tj = 100 °C; - - 12.8 mΩ
resistance Fig. 12
VGS = 10 V; ID = 15 A; Tj = 25 °C; - 5.6 8 mΩ
Fig. 13
Dynamic characteristics
QGD gate-drain charge VGS = 10 V; ID = 60 A; VDS = 30 V; - 7.7 - nC
Fig. 15; Fig. 14
Nexperia PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

Symbol Parameter Conditions Min Typ Max Unit

QG(tot) total gate charge VGS = 10 V; ID = 60 A; VDS = 30 V; - 39 - nC
Fig. 14; Fig. 15
Avalanche ruggedness
EDS(AL)S non-repetitive drain- VGS = 10 V; Tj(init) = 25 °C; ID = 76 A; - - 97 mJ
source avalanche Vsup ≤ 60 V; RGS = 50 Ω; unclamped
energy

5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 S source mb D

2 S source
G
3 S source
4 G gate mbb076 S
1 2 3 4
mb D mounting base; connected to
LFPAK56; Power-
drain
SO8 (SOT669)

6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PSMN8R5-60YS LFPAK56; Plastic single-ended surface-mounted package SOT669
Power-SO8 (LFPAK56; Power-SO8); 4 leads

7. Marking
Table 4. Marking codes
Type number Marking code
PSMN8R5-60YS 8R560

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 60 V

VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 60 V

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Product data sheet 22 July 2015 2 / 14

Nexperia PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

Symbol Parameter Conditions Min Max Unit

VGS gate-source voltage -20 20 V

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 106 W

ID drain current VGS = 10 V; Tmb = 100 °C; Fig. 2 - 54 A

VGS = 10 V; Tmb = 25 °C; Fig. 2 - 76 A

IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 303 A

Tstg storage temperature -55 175 °C

Tj junction temperature -55 175 °C

Tsld(M) peak soldering temperature - 260 °C

Source-drain diode
IS source current Tmb = 25 °C - 76 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 303 A

Avalanche ruggedness
EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 76 A; - 97 mJ
avalanche energy Vsup ≤ 60 V; RGS = 50 Ω; unclamped

03aa16
120

Pder
(%)

80

40

0
0 50 100 150 200
Tmb (°C)

Fig. 1. Normalized total power dissipation as a function of mounting base temperature

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Product data sheet 22 July 2015 3 / 14

Nexperia PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

003aad791
100
ID
(A)
80

60

40

20

0
0 50 10 0 150 200
Tmb (°C)

Fig. 2. Continuous drain current as a function of mounting base temperature

003a a d792
103
ID
(A) Limit RDSon = VDS / ID

102 tp = 10 µs

100 µs

10

DC
1 1 ms
10 ms
100 ms

10- 1
10- 1 1 10 102 103
VDS (V)

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance Fig. 4 - 0.63 1.42 K/W
from junction to
mounting base

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Product data sheet 22 July 2015 4 / 14

Nexperia PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

003aad834
1

Zth(j-mb) d = 0.5
(K/W)
0.2
-1
10 0.1

0.05

0.02 tp
P δ=
10-2 T
single shot

tp t
T
10-3
10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values

10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = -55 °C 54 - - V
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V

VGS(th) gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C; 2 3 3.8 V

voltage Fig. 10; Fig. 11
VGSth gate-source threshold ID = 1 mA; VDS = VGS; Tj = -55 °C; - - 4.3 V
voltage Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C; 0.95 - - V
Fig. 11
IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - 0.03 2 µA

VDS = 60 V; VGS = 0 V; Tj = 125 °C - - 50 µA

IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

RDSon drain-source on-state VGS = 10 V; ID = 15 A; Tj = 175 °C; - 12 18.4 mΩ

resistance Fig. 12
VGS = 10 V; ID = 15 A; Tj = 100 °C; - - 12.8 mΩ
Fig. 12
VGS = 10 V; ID = 15 A; Tj = 25 °C; - 5.6 8 mΩ
Fig. 13
RG gate resistance f = 1 MHz - 0.61 - Ω

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Product data sheet 22 July 2015 5 / 14

Nexperia PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

Symbol Parameter Conditions Min Typ Max Unit

Dynamic characteristics
QG(tot) total gate charge ID = 60 A; VDS = 30 V; VGS = 10 V; - 39 - nC
Fig. 14; Fig. 15
ID = 0 A; VDS = 0 V; VGS = 10 V - 33 - nC

QGS gate-source charge ID = 60 A; VDS = 30 V; VGS = 10 V; - 13.3 - nC

Fig. 15; Fig. 14
QGS(th) pre-threshold gate- ID = 60 A; VDS = 30 V; VGS = 10 V; - 7 - nC
source charge Fig. 14
QGS(th-pl) post-threshold gate- - 6.2 - nC
source charge
QGD gate-drain charge ID = 60 A; VDS = 30 V; VGS = 10 V; - 7.7 - nC
Fig. 15; Fig. 14
VGS(pl) gate-source plateau VDS = 30 V; Fig. 14; Fig. 15 - 5.2 - V
voltage
Ciss input capacitance VDS = 30 V; VGS = 0 V; f = 1 MHz; - 2370 - pF

Coss output capacitance Tj = 25 °C; Fig. 16 - 307 - pF

Crss reverse transfer - 172 - pF

capacitance
td(on) turn-on delay time VDS = 30 V; RL = 0.5 Ω; VGS = 10 V; - 18.4 - ns

tr rise time RG(ext) = 4.7 Ω - 13.7 - ns

td(off) turn-off delay time - 32.4 - ns

tf fall time - 9.2 - ns

Source-drain diode
VSD source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.8 1.2 V

trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; - 43.3 - ns

Qr recovered charge VDS = 30 V - 61.4 - nC

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Product data sheet 22 July 2015 6 / 14

Nexperia PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

003aad794 003aad801
60 4000

gfs C Ciss
(pF)
(S)
3000
40

Crss
2000

20
1000

0 0
0 20 40 60 80 0 3 6 9 12
ID (A) VGS (V)

Fig. 5. Forward transconductance as a function of Fig. 6. Input and reverse transfer capacitances as a
drain current; typical values function of gate-source voltage, typical values

003aad797 003aad795
40 80
ID 10 7 6 5.5
RDSon
(A)
(mΩ)

30 60

20 40

VGS (V) = 4.5

10 20

0 0
4 8 12 16 20 0 0.5 1 1.5 2
VGS (V) VDS (V)

Fig. 7. Drain-source on-state resistance as a function Fig. 8. Output characteristics: drain current as a
of gate-source voltage; typical values function of drain-source voltage; typical values

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Product data sheet 22 July 2015 7 / 14

Nexperia PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

003aad796 aaa-019191
80 10-1
ID
ID (A)
(A)
10-2
60

Min Typ Max

10-3

40

10-4

20
Tj = 175 °C Tj = 25 °C 10-5

0 10-6
0 2 4 6 0 1 2 3 4 5
VGS (V) VGS (V)

Fig. 9. Transfer characteristics: drain current as a Tj = 25 °C; VDS = 5V

function of gate-source voltage; typical values Fig. 10. Sub-threshold drain current as a function of
gate-source voltage

aaa-019190 003aad696
5 2.4
VGS(th) a
(V)
2
4
Max
1.6
3
Typ
1.2

2 Min
0.8

1
0.4

0 0
-60 -30 0 30 60 90 120 150 180 -60 0 60 120 180
Tj (°C) Tj (°C)

ID = 1 mA ; VDS = VGS Fig. 12. Normalized drain-source on-state resistance

Fig. 11. Gate-source threshold voltage as a function of factor as a function of junction temperature.
junction temperature

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Product data sheet 22 July 2015 8 / 14

Nexperia PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

003aad798
25
VGS (V) = 5 5.5 VDS
RDSon
(mΩ) ID
20

VGS(pl)

15
VGS(th)
VGS
6
QGS2

10 7 QGS1
8 QGS QGD
QG(tot)
10 003aaa508

5 Fig. 14. Gate charge waveform definitions

0 20 40 60 80
ID (A)

Fig. 13. Drain-source on-state resistance as a function

of drain current; typical values

003aad799 003aad800
10 104
VGS
(V) 12 V C
(pF)
8 VDS = 30 V

48 V Ciss

103

Coss
2
Crss

0 102
0 20 40 60 10- 1 1 10 102
QG (nC) VDS (V)

Fig. 15. Gate-source voltage as a function of gate Fig. 16. Input, output and reverse transfer capacitances
charge; typical values as a function of drain-source voltage; typical
values

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Product data sheet 22 July 2015 9 / 14

Nexperia PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

003aad802
80
IS
(A)

60

40

20
Tj = 175 °C Tj = 25 °C

0
0 0.4 0.8 1.2
VSD (V)

Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values

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Product data sheet 22 July 2015 10 / 14

Nexperia PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

11. Package outline

Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669

A2
E A C

b2 c2 E1

L1 b3
mounting
b4
base

D1

H D

L2
1 2 3 4
X
e b w A c

1/2 e

A (A3)
A1 C

L
detail X
y C

0 5 mm θ

scale 8°

0°
Dimensions (mm are the original dimensions)

Unit(1) A A1 A2 A3 b b2 b3 b4 c c2 D(1) D1(1) E(1) E1(1) e H L L1 L2 w y

max 1.20 0.15 1.10 0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 6.2 0.85 1.3 1.3
mm nom 0.25 1.27 0.25 0.1
min 1.01 0.00 0.95 0.35 3.62 2.0 0.7 0.19 0.24 3.80 4.8 3.1 5.8 0.40 0.8 0.8
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. sot669_po

Outline References European

Issue date
version IEC JEDEC JEITA projection
11-03-25
SOT669 MO-235 13-02-27

Fig. 18. Package outline LFPAK56; Power-SO8 (SOT669)

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Product data sheet 22 July 2015 11 / 14

Nexperia PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

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data sheet shall define the specification of the product as agreed between the Absolute Maximum Ratings System of IEC 60134) will cause permanent
Nexperia and its customer, unless Nexperia and damage to the device. Limiting values are stress ratings only and (proper)
customer have explicitly agreed otherwise in writing. In no event however, operation of the device at these or any other conditions above those
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Product data sheet 22 July 2015 12 / 14

Nexperia PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

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12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.

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Product data sheet 22 July 2015 13 / 14

Nexperia PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

13. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Marking ................................................................... 2
8 Limiting values .......................................................2
9 Thermal characteristics .........................................4
10 Characteristics ....................................................... 5
11 Package outline ................................................... 11
12 Legal information .................................................12
12.1 Data sheet status ............................................... 12
12.2 Definitions ...........................................................12
12.3 Disclaimers .........................................................12
12.4 Trademarks ........................................................ 13

© Nexperia B.V. 2017. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: [email protected]
Date of release: 22 July 2015

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Product data sheet 22 July 2015 14 / 14