Physical Modelling and Experimental Characterisation of Inalas/Ingaas Avalanche Photodiode For 10 GB/S Data Rates and Higher
Physical Modelling and Experimental Characterisation of Inalas/Ingaas Avalanche Photodiode For 10 GB/S Data Rates and Higher
Physical Modelling and Experimental Characterisation of Inalas/Ingaas Avalanche Photodiode For 10 GB/S Data Rates and Higher
Omar S. Abdulwahid1, James Sexton1, Ioannis Kostakis2, Kawa Ian2, Mohamed Missous1
1School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK
2Integrated Compound Semiconductors, Manchester, UK
E-mail: [email protected]
Abstract: InAlAs/InGaAs avalanche photodiodes (APD) were simulated using physical device models, then designed and
fabricated to detect light in the wavelength range from 1.3 to 1.55 µm. DC characterisation under dark and light conditions were
performed at room temperature to measure and investigate the performance of the APD. High-frequency characterisation was
carried out on the device to extract the diode intrinsic and extrinsic parameters. The work reported here focuses on the dark and
light physical device simulations (both under DC and AC conditions) which were accomplished using Atlas SILVACO tool. The
effect of electron velocity overshoot was considered for accurate bandwidth modelling. All measured data are in excellent
agreement with the modelled ones. The internal device gain of the APD is 45 at −23.5 V leading to a ∼220 GHz gain–bandwidth
product. This successful APD model can be exploited to further improve the diode structure for higher data rate applications
beyond 10 Gb/s.