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    Mospec: 1N4001 THRU 1N4007

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    biswanath jena
    This document summarizes the specifications and features of 1N4001 through 1N4007 general purpose silicon rectifier diodes. Key specifications include: - Voltage range from 50 to 1000 Volts and current rating of 1 Ampere. - Features low forward voltage drop, low reverse leakage, and high forward surge current capability. - Package is a transfer molded plastic case with epoxy encapsulation and solderable terminals. Diodes can operate from -65 to +175 degrees Celsius. - Electrical characteristics include maximum instantaneous forward voltage of 1.1 Volts at 1 Amp and reverse leakage of 5uA at rated voltage.

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    Mospec: 1N4001 THRU 1N4007

    Uploaded by

    biswanath jena
    33 views3 pages
    This document summarizes the specifications and features of 1N4001 through 1N4007 general purpose silicon rectifier diodes. Key specifications include: - Voltage range from 50 to 1000 Volts and current rating of 1 Ampere. - Features low forward voltage drop, low reverse leakage, and high forward surge current capability. - Package is a transfer molded plastic case with epoxy encapsulation and solderable terminals. Diodes can operate from -65 to +175 degrees Celsius. - Electrical characteristics include maximum instantaneous forward voltage of 1.1 Volts at 1 Amp and reverse leakage of 5uA at rated voltage.

    Original Description:

    About course in vaccum tubes

    Original Title

    Vaccum tubes

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    This document summarizes the specifications and features of 1N4001 through 1N4007 general purpose silicon rectifier diodes. Key specifications include: - Voltage range from 50 to 1000 Volts and current rating of 1 Ampere. - Features low forward voltage drop, low reverse leakage, and high forward surge current capability. - Package is a transfer molded plastic case with epoxy encapsulation and solderable terminals. Diodes can operate from -65 to +175 degrees Celsius. - Electrical characteristics include maximum instantaneous forward voltage of 1.1 Volts at 1 Amp and reverse leakage of 5uA at rated voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    33 views3 pages

    Mospec: 1N4001 THRU 1N4007

    Uploaded by

    biswanath jena
    This document summarizes the specifications and features of 1N4001 through 1N4007 general purpose silicon rectifier diodes. Key specifications include: - Voltage range from 50 to 1000 Volts and current rating of 1 Ampere. - Features low forward voltage drop, low reverse leakage, and high forward surge current capability. - Package is a transfer molded plastic case with epoxy encapsulation and solderable terminals. Diodes can operate from -65 to +175 degrees Celsius. - Electrical characteristics include maximum instantaneous forward voltage of 1.1 Volts at 1 Amp and reverse leakage of 5uA at rated voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    MOSPEC 1N4001 THRU 1N4007

    GENERAL PURPOSE SILICON RECTIFIER


    VOLTAGE RANGE 50 TO 1000 Volts Current 1 Ampere

    FEATURES
    ＊Low cost construction
    ＊Low forward voltage drop
    ＊Low reverse leakage
    ＊High forward surge current capability
    ＊High temperature soldering guaranteed DO-41
    260℃/10 seconds, 0.375”(9.5 mm) lead length
    at 5 lbs(2.3kg) tension
    MILLIMETERS
    MECHANICAL DATA DIM
    ＊Case：Transfer Molded Plastic MIN MAX
    ＊Epoxy: UL94V-O rate flame retardant A 2.00 2.70
    ＊Terminals：Solderable Per MIL-STD-202 Method 208 B 25.40 ---
    ＊Polarity：Color band denotes cathode end
    C 4.20 5.20
    ＊Mounting position: Any
    ＊Weight： 0.012 ounce. 0.33 gram (approx) D 0.70 0.90

    MAXIMUM RATINGS AND ELECTRICAL CHARATERISTICS


    * Rating at 25℃ ambient temperature unless otherwise specified
    * Single phase,half wave. 60Hz, resistive or inductive load.
    * For capacitive load derate current by 20 %

    Characteristic Symbol 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Unit

    Peak Repetitive Reverse Voltage VRRM


    Working Peak Reverse Voltage VRWM 50 100 200 400 600 800 1000 V
    DC Blocking Voltage VR

    RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V

    Average Rectifier Forward Current


    IF(AV) 1.0 A
    Per Leg TC=125℃
    Non-Repetitive Peak Surge Current (Surge
    applied at rate load conditions halfware, IFSM 30 A
    single phase, 60Hz)
    Maximum Instantaneous Forward Voltage
    VF 1.1 V
    ( IF =1.0 Amp TC = 25℃)
    Maximum Instantaneous Reverse Current
    ( Rated DC Voltage, TC = 25℃) IR 5.0 uA
    ( Rated DC Voltage, TC = 100℃) 50
    Typical Junction Capacitance
    Cj 15 pF
    (Reverse Voltage of 4 volts & f=1 MHz)

    Typical Thermal Resistance Rθ jA 50 ℃/W


    Operating and Storage Junction
    Temperature Range TJ , Tstg -65 to +175 ℃
    1N4001 thru 1N4007

    FIG-1 FORWARD CURRENT DERATING CURVE FIG-2 TYPICAL FORWARD CHARACTERISITICS


    AVERAGE FORWARD RECTIFIED CURRENT (Amp.)

    NSTANTANEOUS FORWARD CURRENT (Amp.)


    CASE TEMPERATURE (℃) FORWARD VOLTAGE (Volts)

    FIG-3 TYPICAL REVERSE CHARACTERISTICS FIG-4 TYPICAL JUNCTION CAPACITANCE


    INSTANTANEOUS REVERSE CURRENT (uA.)

    o
    TC=125 C
    JUNCTION CAPACITANCE (PF)

    o
    TC=25 C

    PERCENT OF RATED REVERSE VOLTAGE (﹪) REVERSE VOLTAGE (Volts)

    FIG-5 PEAK FORWARD SURGE CURRENT


    CURRENT (Amp.)
    PEAK FORWARD SURGE

    NUMBER OF CYCLES AT 60 Hz

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