IRFBE30, SiHFBE30

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 800
Available
RDS(on) (Ω) VGS = 10 V 3.0 • Repetitive Avalanche Rated
• Fast Switching RoHS*
Qg (Max.) (nC) 78 COMPLIANT
Qgs (nC) 9.6 • Ease of Paralleling
Qgd (nC) 45 • Simple Drive Requirements
Configuration Single • Lead (Pb)-free Available
D
DESCRIPTION
TO-220
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G
cost-effectiveness.
The TO-220 package is universally preferred for all
S commercial-industrial applications at power dissipation
D levels to approximately 50 W. The low thermal resistance
G S
and low package cost of the TO-220 contribute to its wide
N-Channel MOSFET
acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220
IRFBE30PbF
Lead (Pb)-free
SiHFBE30-E3
IRFBE30
SnPb
SiHFBE30

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 800
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 4.1
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 2.6 A
Pulsed Drain Currenta IDM 16
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb EAS 260 mJ
Repetitive Avalanche Currenta IAR 4.1 A
Repetitive Avalanche Energya EAR 13 mJ
Maximum Power Dissipation TC = 25 °C PD 125 W
Peak Diode Recovery dV/dtc dV/dt 2.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 29 mH, RG = 25 Ω, IAS = 4.1 A (see fig. 12).
c. ISD ≤ 4.1 A, dI/dt ≤ 100 A/µs, VDD ≤ 600, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91118 www.vishay.com

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IRFBE30, SiHFBE30
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 1.0

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 800 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.9 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = 800 V, VGS = 0 V - - 100
Zero Gate Voltage Drain Current IDSS µA
VDS = 640 V, VGS = 0 V, TJ = 125 °C - - 500
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 2.5 Ab - - 3.0 Ω
Forward Transconductance gfs VDS = 100 V, ID = 2.5 Ab 2.5 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 1300 -
Output Capacitance Coss VDS = 25 V, - 310 - pF
Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 190 -
Total Gate Charge Qg - - 78
ID = 4.1 A, VDS = 400 V,
Gate-Source Charge Qgs VGS = 10 V - - 9.6 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 45
Turn-On Delay Time td(on) - 12 -
Rise Time tr VDD = 400 V, ID = 4.1 A - 33 -
ns
Turn-Off Delay Time td(off) RG = 12 Ω, RD = 95 Ω, see fig. 10b - 82 -
Fall Time tf - 30 -
Between lead, D
Internal Drain Inductance LD - 4.5 -
6 mm (0.25") from
nH
package and center of G

Internal Source Inductance LS die contact - 7.5 -

S

Drain-Source Body Diode Characteristics

MOSFET symbol
Continuous Source-Drain Diode Current IS D
- - 4.1
showing the
A
integral reverse G

Pulsed Diode Forward Currenta ISM p - n junction diode S

- - 16

Body Diode Voltage VSD TJ = 25 °C, IS = 4.1 A, VGS = 0 Vb - - 1.8 V

Body Diode Reverse Recovery Time trr - 480 720 ns
TJ = 25 °C, IF = 4.1 A, dI/dt = 100 A/µsb
Body Diode Reverse Recovery Charge Qrr - 1.8 2.7 µC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

www.vishay.com Document Number: 91118

2 S-81262-Rev. A, 07-Jul-08
 IRFBE30, SiHFBE30
Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91118 www.vishay.com

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IRFBE30, SiHFBE30
Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91118

4 S-81262-Rev. A, 07-Jul-08
 IRFBE30, SiHFBE30
Vishay Siliconix

RD
VDS

VGS
D.U.T.
RG
+
- VDD

10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

VDS
90 %

10 %
VGS
td(on) tr td(off) tf

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

L
VDS
VDS
Vary tp to obtain tp
required IAS
VDD
RG D.U.T +
V DD
-
IAS VDS
10 V
tp 0.01 Ω
IAS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91118 www.vishay.com

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IRFBE30, SiHFBE30
Vishay Siliconix

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 kΩ
10 V 12 V 0.2 µF
0.3 µF

QGS QGD +
VDS
D.U.T. -

VG
VGS

3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91118

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 IRFBE30, SiHFBE30
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

RG • dV/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor "D"
• D.U.T. - device under test

Driver gate drive

P.W.
Period D=
P.W. Period

VGS = 10 V*

D.U.T. ISD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

* VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91118.

Document Number: 91118 www.vishay.com

S-81262-Rev. A, 07-Jul-08 7
 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1