IRFPF40
IRFPF40
IRFPF40
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 900
• Repetitive Avalanche Rated Available
RDS(on) (Ω) VGS = 10 V 2.5
Qg (Max.) (nC) 120
• Isolated Central Mounting Hole RoHS*
COMPLIANT
Qgs (nC) 16 • Fast Switching
Qgd (nC) 67 • Ease of Paralleling
Configuration Single • Simple Drive Requirements
D
• Compliant to RoHS Directive 2002/95/EC
TO-247AC DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
S commercial-industrial applications where higher power
D
G S levels preclude the use of TO-220AB devices. The
N-Channel MOSFET TO-247AC is similar but superior to the earlier TO-218
package because of its isolated mouting hole. It also
provides greater creepage distance between pins to meet
the requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247AC
IRFPF40PbF
Lead (Pb)-free
SiHFPF40-E3
IRFPF40
SnPb
SiHFPF40
Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
RD
VDS
VGS
D.U.T.
RG
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
VDS
90 %
10 %
VGS
td(on) tr td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms
L
VDS VDS
Vary tp to obtain
tp
required IAS
VDD
RG D.U.T +
V DD
- VDS
I AS
10 V
tp 0.01 Ω
IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Current regulator
Same type as D.U.T.
QG 50 kΩ
VGS 12 V 0.2 µF
0.3 µF
QGS QGD +
VDS
D.U.T. -
VG
VGS
3 mA
Charge
IG ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
- +
-
Rg • dV/dt controlled by Rg +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor “D”
• D.U.T. - device under test
VGS = 10 Va
Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 % ISD
Note
a. VGS = 5 V for logic level devices
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91250.
MILLIMETERS MILLIMETERS
DIM. MIN. MAX. NOTES DIM. MIN. MAX. NOTES
A 4.83 5.21 D1 16.25 16.85 5
A1 2.29 2.55 D2 0.56 0.76
A2 1.50 2.49 E 15.50 15.87 4
b 1.12 1.33 E1 13.46 14.16 5
b1 1.12 1.28 E2 4.52 5.49 3
b2 1.91 2.39 6 e 5.44 BSC
b3 1.91 2.34 L 14.90 15.40
b4 2.87 3.22 6, 8 L1 3.96 4.16 6
b5 2.87 3.18 ØP 3.56 3.65 7
c 0.55 0.69 6 Ø P1 7.19 ref.
c1 0.55 0.65 Q 5.31 5.69
D 20.40 20.70 4 S 5.54 5.74
Notes
(1) Package reference: JEDEC® TO247, variation AC
(2) All dimensions are in mm
(3) Slot required, notch may be rounded
(4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the
outermost extremes of the plastic body
(5) Thermal pad contour optional with dimensions D1 and E1
(6) Lead finish uncontrolled in L1
(7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
(8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4
dimension at maximum material condition
4 4
2xR
D D1
(2)
1 2 3 D 4
Thermal pad
5 L1
C L 4
E1
See view B A
0.01 M D B M
2 x b2 C View A - A
2x e
3xb
b4 A1
0.10 M C A M
(b1, b3, b5)
Planting Base metal
Lead Assignments
1. Gate D DE E
2. Drain
3. Source (c) c1
C C
4. Drain
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS MILLIMETERS
DIM. MIN. MAX. NOTES DIM. MIN. MAX. NOTES
A 4.58 5.31 D2 0.51 1.30
A1 2.21 2.59 E 15.29 15.87
A2 1.17 2.49 E1 13.72 -
b 0.99 1.40 e 5.46 BSC
b1 0.99 1.35 Øk 0.254
b2 1.53 2.39 L 14.20 16.25
b3 1.65 2.37 L1 3.71 4.29
b4 2.42 3.43 ØP 3.51 3.66
b5 2.59 3.38 Ø P1 - 7.39
c 0.38 0.86 Q 5.31 5.69
c1 0.38 0.76 R 4.52 5.49
D 19.71 20.82 S 5.51 BSC
D1 13.08 -
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
D2
B E P1
R/2 P
N A2
K M D BM
R
D1
D
D
L1
L
b4 C E1
b2 e A1
b 0.01 M D B M
0.10 M C A M
b1, b3, b5
Base metal
c1
c
b, b2, b4
Plating
MILLIMETERS MILLIMETERS
DIM. MIN. MAX. DIM. MIN. MAX.
A 4.65 5.31 D2 0.51 1.35
A1 2.21 2.59 E 15.29 15.87
A2 1.17 1.37 E1 13.46 -
b 0.99 1.40 e 5.46 BSC
b1 0.99 1.35 k 0.254
b2 1.65 2.39 L 14.20 16.10
b3 1.65 2.34 L1 3.71 4.29
b4 2.59 3.43 N 7.62 BSC
b5 2.59 3.38 P 3.56 3.66
c 0.38 0.89 P1 - 7.39
c1 0.38 0.84 Q 5.31 5.69
D 19.71 20.70 R 4.52 5.49
D1 13.08 - S 5.51 BSC
ECN: E20-0545-Rev. F, 19-Oct-2020
DWG: 5971
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
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