IRF840, SiHF840

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 500 Available
RDS(on) (Ω) VGS = 10 V 0.85 • Repetitive Avalanche Rated
• Fast Switching
RoHS*
Qg (Max.) (nC) 63 COMPLIANT
Qgs (nC) 9.3 • Ease of Paralleling
Qgd (nC) 32 • Simple Drive Requirements
Configuration Single • Lead (Pb)-free Available
D
DESCRIPTION
TO-220
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G cost-effectiveness.
The TO-220 package is universally preferred for all
S commercial-industrial applications at power dissipation
D levels to approximately 50 W. The low thermal resistance
G S
and low package cost of the TO-220 contribute to its wide
N-Channel MOSFET acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220
IRF840PbF
Lead (Pb)-free
SiHF840-E3
IRF840
SnPb
SiHF840

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ± 20 V
TC = 25 °C 8.0
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 5.1 A
Pulsed Drain Currenta IDM 32
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb EAS 510 mJ
Repetitive Avalanche Currenta IAR 8.0 A
Repetitive Avalanche Energya EAR 13 mJ
Maximum Power Dissipation TC = 25 °C PD 125 W
Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, RG = 25 Ω, IAS = 8.0 A (see fig. 12).
c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91070 www.vishay.com

S-81290-Rev. B, 16-Jun-08 1
IRF840, SiHF840
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 1.0

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.78 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = 500 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS µA
VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 4.8 Ab - - 0.85 Ω
Forward Transconductance gfs VDS = 50 V, ID = 4.8 Ab 4.9 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 1300 -
Output Capacitance Coss VDS = 25 V, - 310 - pF
Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 120 -
Total Gate Charge Qg - - 63
ID = 8 A, VDS = 400 V,
Gate-Source Charge Qgs VGS = 10 V - - 9.3 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 32
Turn-On Delay Time td(on) - 14 -
Rise Time tr VDD = 250 V, ID = 8 A - 23 -
ns
Turn-Off Delay Time td(off) RG = 9.1 Ω, RD = 31 Ω, see fig. 10b - 49 -
Fall Time tf - 20 -
Between lead, D

Internal Drain Inductance LD - 4.5 -

6 mm (0.25") from
nH
package and center of G

Internal Source Inductance LS die contact S

- 7.5 -

Drain-Source Body Diode Characteristics

MOSFET symbol
Continuous Source-Drain Diode Current IS D
- - 8.0
showing the
A
integral reverse G

Pulsed Diode Forward Currenta ISM - - 32

p - n junction diode S

Body Diode Voltage VSD TJ = 25 °C, IS = 8 A, VGS = 0 Vb - - 2.0 V

Body Diode Reverse Recovery Time trr - 460 970 ns
TJ = 25 °C, IF = 8 A, dI/dt = 100 A/µsb
Body Diode Reverse Recovery Charge Qrr - 4.2 8.9 µC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

www.vishay.com Document Number: 91070

2 S-81290-Rev. B, 16-Jun-08
 IRF840, SiHF840
Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

VGS
Top 15 V
10 V 150 °C
8.0 V 101

ID, Drain Current (A)

ID, Drain Current (A)

7.0 V
101 6.0 V
5.5 V
5.0 V
25 °C
Bottom 4.5 V

100
4.5 V

100 20 µs Pulse Width 20 µs Pulse Width

TC = 25 °C VDS = 50 V

100 101 4 5 6 7 8 9 10

91070_01 VDS, Drain-to-Source Voltage (V) 91070_03 VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics

3.0
RDS(on), Drain-to-Source On Resistance

VGS ID = 8.0 A
Top 15 V VGS = 10 V
101 10 V 2.5
8.0 V
ID, Drain Current (A)

7.0 V
2.0
(Normalized)

6.0 V
5.5 V 4.5 V
5.0 V 1.5
Bottom 4.5 V

1.0

100 0.5
20 µs Pulse Width
TC = 150 °C
0.0
100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160

91070_02 VDS, Drain-to-Source Voltage (V) 91070_04 TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91070 www.vishay.com

S-81290-Rev. B, 16-Jun-08 3
IRF840, SiHF840
Vishay Siliconix

2500
VGS = 0 V, f = 1 MHz

ISD, Reverse Drain Current (A)

Ciss = Cgs + Cgd, Cds Shorted
2000 Crss = Cgd
150 °C
Coss = Cds + Cgd
Capacitance (pF)

101
1500 Ciss
25 °C

1000

Coss
500
Crss
VGS = 0 V
0 100
100 0.4 0.6 0.8 1.0 1.2 1.4
101

91070_05 VDS, Drain-to-Source Voltage (V) 91070_07 VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 102
ID = 8.0 A Operation in this area limited
VGS, Gate-to-Source Voltage (V)

5 by RDS(on)
16 VDS = 400 V 10 µs
2
ID, Drain Current (A)

VDS = 250 V
10
VDS = 100 V 100 µs
12 5

2 1 ms
8
1
10 ms
5
4
TC = 25 °C
For test circuit 2 TJ = 150 °C
see figure 13 Single Pulse
0 0.1
2 5 2 5 2 5 2 5 2 5
0 15 30 45 60 75 0.1 1 10 102 103 104

91070_06 QG, Total Gate Charge (nC) 91070_08 VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91070

4 S-81290-Rev. B, 16-Jun-08
 IRF840, SiHF840
Vishay Siliconix

RD
VDS

VGS
8.0 D.U.T.
RG
+
- VDD
ID, Drain Current (A)

6.0 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

4.0
Fig. 10a - Switching Time Test Circuit

2.0
VDS
90 %
0.0
25 50 75 100 125 150

91070_09 TC, Case Temperature (°C)

10 %
VGS
td(on) tr td(off) tf

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms

10
Thermal Response (ZthJC)

1
0 - 0.5
0.2
0.1 0.1 PDM
0.05
0.02 Single Pulse
0.01 t1
(Thermal Response)
10-2 t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-3
10-5 10-4 10-3 10-2 0.1 1 10 102

91070_11 t1, Rectangular Pulse Duration (S)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

L
VDS VDS
Vary tp to obtain tp
required IAS
VDD
RG D.U.T. +
V DD
- VDS
IAS
10 V
tp 0.01 Ω
IAS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91070 www.vishay.com

S-81290-Rev. B, 16-Jun-08 5
IRF840, SiHF840
Vishay Siliconix

1200
ID

EAS, Single Pulse Energy (mJ)

Top 3.6 A
1000 5.1 A
Bottom 8.0 A
800

600

400

200

VDD = 50 V
0
25 50 75 100 125 150

91070_12c Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

50 kΩ
QG
12 V 0.2 µF
10 V 0.3 µF

+
QGS QGD VDS
D.U.T. -

VG VGS

3 mA

Charge IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91070

6 S-81290-Rev. B, 16-Jun-08
 IRF840, SiHF840
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

RG • dV/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor "D"
• D.U.T. - device under test

Driver gate drive

P.W.
Period D=
P.W. Period

VGS = 10 V*

D.U.T. ISD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

* VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91070.

Document Number: 91070 www.vishay.com

S-81290-Rev. B, 16-Jun-08 7
 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1