Irf540, Sihf540: Vishay Siliconix
Irf540, Sihf540: Vishay Siliconix
Irf540, Sihf540: Vishay Siliconix
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 100
Available
• Repetitive Avalanche Rated
RDS(on) (Ω) VGS = 10 V 0.077
• 175 °C Operating Temperature RoHS*
Qg (Max.) (nC) 72 COMPLIANT
Qgs (nC) 11 • Fast Switching
Qgd (nC) 32 • Ease of Paralleling
Configuration Single • Simple Drive Requirements
• Lead (Pb)-free Available
D
TO-220 DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
S
D commercial-industrial applications at power dissipation
G S levels to approximately 50 W. The low thermal resistance
N-Channel MOSFET and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220
IRF540PbF
Lead (Pb)-free
SiHF540-E3
IRF540
SnPb
SiHF540
Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
RD
VDS
VGS
D.U.T.
RG
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
VDS
90 %
10 %
VGS
td(on) tr td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms
L VDS
VDS
Vary tp to obtain tp
required IAS VDD
RG D.U.T +
V DD
- VDS
IAS
10 V
tp 0.01 Ω
IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Current regulator
Same type as D.U.T.
QG 50 kΩ
10 V 12 V 0.2 µF
0.3 µF
QGS QGD +
VDS
D.U.T. -
VG
VGS
3 mA
Charge
IG ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
- +
-
RG • dV/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VGS = 10 V*
Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage Body diode forward drop
Inductor current
Ripple ≤ 5 % ISD
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91021.
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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