Charge Densities and Mass Action Law
Charge Densities and Mass Action Law
Charge Densities and Mass Action Law
Types of Semiconductors
Important points
• Intrinsic semiconductor:
(Intrinsic Concentration)
(at steady state)
• Generates conduction in the order of nA and PA.
• The process of adding impurities is called Doping
Extrinsic Semiconductor
N-type semiconductor:
• Adding pentavalent impurities(p,As,Sb)
• Majority charge carriers are electrons and
minority charge carriers are holes.
• Pentavalent impurities are called as Donors.
• After doping
Extrinsic Semiconductor
P-type semiconductor:
• Adding trivalent impurities(Boron,Gallium,
Indium)
• Majority charge carriers are holes and
minority charge carriers are electrons.
• Trivalent impurities are called as Acceptors.
• After doping
Mass Action Law
In a Semiconductor (intrinsic or extrinsic) under
thermal equilibrium the product of electrons
and holes is always a constant and is equal to
the square of intrinsic concentration.
Mass Action Law
In a Semiconductor (intrinsic or extrinsic) under
thermal equilibrium the product of electrons
and holes is always a constant and is equal to
the square of intrinsic concentration.
Equation of Charge Neutrality
Si & P
N-type semiconductor
What is the net charge
of this material
+14
Si & P
-14
+14
+ ion is
-13
One electron is
Si & P
taken out from n-
type
semiconductor
Contd..
ND +P= NA +n
Charge densities in semiconductor
N-type semiconductor:
• NA=0
• After doping
• Recall ND +P= NA +n n≈ ND
• Recall Mass action law
Charge densities in semiconductor
N-type semiconductor:
• NA=0
• After doping
• Recall ND +P= NA +n n≈ ND
• Recall Mass action law
• Let =Electron Concentration in n-type
semiconductor
Charge densities in semiconductor
N-type semiconductor:
• Recall ND +P= NA +n n≈ ND
• Recall Mass action law
• Let =Electron Concentration in n-type
semiconductor
• Let =Hole Concentration in n-type
semiconductor
• So for n type i.e., ≈ ND
Charge densities in semiconductor
N-type semiconductor:
• Recall ND +P= NA +n n≈ ND
• Recall Mass action law
• So for n type i.e., ≈ ND
Charge densities in semiconductor
P-type semiconductor:
• ND=0
• After doping
• Recall ND +P= NA +n P≈ NA
• Recall Mass action law
Charge densities in semiconductor
P-type semiconductor:
• ND=0
• After doping
• Recall ND +P= NA +n p≈ NA
• Recall Mass action law
• Let =Hole Concentration in p-type
semiconductor
Charge densities in semiconductor
P-type semiconductor:
• Recall ND +P= NA +n P≈ NA
• Recall Mass action law
• Let =Hole Concentration in p-type
semiconductor
• Let =Electron Concentration in p-type
semiconductor
• So for n type i.e., ≈ NA
Charge densities in semiconductor
P-type semiconductor:
• Recall ND +P= NA +n P≈ NA
• Recall Mass action law
• So for n type i.e., ≈ NA
Conductivity of n-type material
• Metal unipolar (current due to electrons only)
• Semiconductor bipolar (current due to n & P)
• Recall J=σE where σ=nqμ conductivity
• For n type
Conductivity of n-type material
• Recall J=σE where σ=nqμ conductivity
• For n type
so σ= q + q
σ= + )q
Conductivity of p-type material
• Recall J=σE where σ=nqμ conductivity
• For p type
Conductivity of p-type material
• For n type
so σ= q + q
σ= + )q
Conductivity of Intrinsic
semiconductor
• In Intrinsic Semiconductor
(Intrinsic Concentration)
so
σ= + )q
Transport Phenomena in
semiconductor
• Drift Current: The transport of charge carriers
in a crystal under the influence of an electric
field is called as “Drift current”.