D

ARF446
G
ARF447
S TO-247
Common
Source

RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE 250V 140W 65MHz

The ARF446 and ARF447 comprise a symmetric pair of common source RF power transistors designed for push-pull
scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
Specified 250 Volt, 40.68 MHz Characteristics: Low Cost Common Source RF Package.

¥ Output Power = 140 Watts. Very High Breakdown for Improved Ruggedness.

¥ Gain = 15dB (Class C) Low Thermal Resistance.

¥ Efficiency = 75% Nitride Passivated Die for Improved Reliability.

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter ARF446/447 UNIT

VDSS Drain-Source Voltage 900

Volts
VDGO Drain-Gate Voltage 900
ID Continuous Drain Current @ TC = 25°C 6.5 Amps
VGS Gate-Source Voltage ±30 Volts
PD Total Power Dissipation @ TC = 25°C 230 Watts
RqJC Junction to Case 0.55 °C/W
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 mA) 900

Volts
VDS(ON) On State Drain Voltage 1 (ID(ON) = 3.5A, VGS = 10V) 7
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25
IDSS mA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA
gfs Forward Transconductance (VDS = 25V, ID = 3.5A) 4 5.7 mhos
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 2 5 Volts
7-2003

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-4907 Rev D

APT Website - http://www.advancedpower.com

 DYNAMIC CHARACTERISTICS ARF446/447
Symbol Characteristic Test Conditions MIN TYP MAX UNIT

Ciss Input Capacitance 1500 1800

VGS = 0V
Coss Output Capacitance VDS = 300V 70 130 pF
Crss f = 1 MHz
Reverse Transfer Capacitance 27 50
td(on) Turn-on Delay Time VGS = 15V 7 15
tr Rise Time VDD = 0.5 VDSS 5 10
ns
td(off) Turn-off Delay Time ID = ID[Cont.] @ 25°C 23 40
tf RG = 1.6W
Fall Time 12 25

FUNCTIONAL CHARACTERISTICS

Symbol Characteristic Test Conditions MIN TYP MAX UNIT

GPS Common Source Amplifier Power Gain f = 27.12 MHz 20 dB

h Drain Efficiency VGS = 0V VDD = 300V 80 %

y Pout = 140W
Electrical Ruggedness VSWR 20:1 No Degradation in Output Power

GPS Common Source Amplifier Power Gain f = 40.68 MHz 13 15 dB

h VGS = 0V VDD = 250V 70 75

Drain Efficiency %
y Pout = 140W No Degradation in Output Power
Electrical Ruggedness VSWR 20:1
1 Pulse Test: Pulse width < 380 mS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

30 3000
Class C Ciss
VDD = 250V
25 Pout = 250W 1000
CAPACITANCE (pf)

20 500
GAIN (dB)

Coss
15
100 Crss
10
50

0 10
10 20 30 40 50 60 65 1 5 10 50 100 300
FREQUENCY (MHz) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Gain vs Frequency Figure 2, Typical Capacitance vs. Drain-to-Source Voltage

16 30 10mS
TJ = -55°C
100mS
OPERATION HERE
ID, DRAIN CURRENT (AMPERES)

ID, DRAIN CURRENT (AMPERES)

LIMITED BY RDS (ON)

VDS> ID (ON) x RDS (ON)MAX. 10

12 250mSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
5 1mS

8
1 10mS
7-2003

.5
4 100mS
TJ = +125°C TJ = -55°C TC =+25°C DC
050-4907 Rev D

TJ =+150°C
TJ = +25°C SINGLE PULSE
0 .1
0 2 4 6 8 1 5 10 50 100 1000
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics Figure 4, Typical Maximum Safe Operating Area
 ARF446/447
1.2 16
VGS=6.5, 8, 10 & 15V

ID, DRAIN CURRENT (AMPERES)

1.1
VGS(th), THRESHOLD VOLTAGE
12 6V
1.0
(NORMALIZED)

0.9 8
5.5V

0.8
4
5V
0.7

4.5V
0.6 0
-50 -25 0 25 50 75 100 125 150 1 5 10 15 20 25 30
TC, CASE TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5, Typical Threshold Voltage vs Temperature Figure 6, Typical Output Characteristics

300 18

GPS, COMMON SOURCE AMPLIFIER GAIN

Class C Class C
VDD = 250V VDD = 250V
250
f = 40.68 MHz f = 40.68 MHz
POUT, POWER OUT (WATTS)

16

200
14

(dB)
150

12
100

10
50

0 8
0 2 4 6 8 10 50 100 150 0
200 250 300
PIN, POWER IN (WATTS) POUT, POWER OUT (WATTS)
Figure 7, Typical Power Out vs Power In Figure 8, Typical Common Source Amplifier Gain vs Power Out

0.6
D=0.5
Z JC, THERMAL IMPEDANCE (°C/W)

0.2
0.1
0.1
0.05
0.05

0.02 Note:
PDM

0.01 0.01 t1
SINGLE PULSE
0.005 t2

Duty Factor D = t1/t2

Peak TJ = PDM x ZqJC + TC
q

0.001
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

Table 1 - Typical Class C Large Signal Input-Output Impedance

Freq. (MHz) Z in (W) Z OL (W)

2.0 20.40 - j 9.6 142.0 - j 20

7-2003

13.5 2.10 - j 6.4 73.0 - j 71

27.0 0.50 - j 2.3 30.0 - j 57
40.0 0.30 - j 0.4 15.0 - j 42
050-4907 Rev D

65.0 0.46 + j 2.0 6.2 - j 25

Z in - gate shunted by 25W
Z OL - conjugate of optimum load impedance for 250W at 250V
 ARF446/447

40.68 MHz Test Circuit

Parts List
C1-C3 -- Arco 465 or equivalent
C4-C6 -- 1nF 500V COG chip L4
L1 -- 2t #18 AWG .25" ID +
L2 -- 3t #18 AWG .25" ID 250V
L3 -- 8t #18 AWG .25" ID -
C4 C5
L4 -- VK200-4B ferrite choke 3mH
R1 -- 25 Ohm 1/2W Carbon
L3
T1 -- 4:1 Broadband Transformer
C3 RF Output
L2 C6

L1 C2
RF Input DUT
T1

C1 R1

40.68 MHz Test Circuit

TO-247 Package Outline

Top View
4.69 (.185)
5.31 (.209) 15.49 (.610)
1.49 (.059) 16.26 (.640)
2.49 (.098)
5.38 (.212) Dimensions in Millimeters and (Inches)
6.15 (.242) BSC 6.20 (.244) NOTE: The ARF446 and ARF447 comprise a symmetric
pair of RF power transistors and meet the same electrical
20.80 (.819) specifications. The device pin-outs are the mirror image
Source

21.46 (.845)
of each other to allow ease of use as a push-pull pair.
3.55 (.138)
3.81 (.150)

4.50 (.177) Max. 2.87 (.113)

3.12 (.123)
Device
0.40 (.016) 1.65 (.065)
0.79 (.031) 19.81 (.780) 2.13 (.084) ARF446 ARF447
20.32 (.800)
1.01 (.040) Gate Drain
1.40 (.055)
Source Source
Drain Gate

2.21 (.087)
5.45 (.215) BSC
7-2003

2.59 (.102)
2-Plcs.
050-4907 Rev D

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.