Scribd Logo
Upload

Welcome to Scribd!

  • 30 views

    Silicon NPN Power Transistors

    Uploaded by

    José Joaquim Braga Braga
    This document provides specifications for the 2SC3151 silicon NPN power transistor. It is housed in a TO-3PN package and is suitable for 800V/1.5A switching regulator applications due to its high breakdown voltage of 900V or more, fast switching speeds, and wide safe operating area. Key parameters include a collector-emitter saturation voltage of 2V max, DC current gain of 8-40, and transition frequency of 15MHz min.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Silicon NPN Power Transistors

    Uploaded by

    José Joaquim Braga Braga
    30 views4 pages
    This document provides specifications for the 2SC3151 silicon NPN power transistor. It is housed in a TO-3PN package and is suitable for 800V/1.5A switching regulator applications due to its high breakdown voltage of 900V or more, fast switching speeds, and wide safe operating area. Key parameters include a collector-emitter saturation voltage of 2V max, DC current gain of 8-40, and transition frequency of 15MHz min.

    Original Title

    2sc3151

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for the 2SC3151 silicon NPN power transistor. It is housed in a TO-3PN package and is suitable for 800V/1.5A switching regulator applications due to its high breakdown voltage of 900V or more, fast switching speeds, and wide safe operating area. Key parameters include a collector-emitter saturation voltage of 2V max, DC current gain of 8-40, and transition frequency of 15MHz min.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    30 views4 pages

    Silicon NPN Power Transistors

    Uploaded by

    José Joaquim Braga Braga
    This document provides specifications for the 2SC3151 silicon NPN power transistor. It is housed in a TO-3PN package and is suitable for 800V/1.5A switching regulator applications due to its high breakdown voltage of 900V or more, fast switching speeds, and wide safe operating area. Key parameters include a collector-emitter saturation voltage of 2V max, DC current gain of 8-40, and transition frequency of 15MHz min.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    JMnic Product Specification

    Silicon NPN Power Transistors 2SC3151

    DESCRIPTION
    ・With TO-3PN package
    ・High breakdown voltage (VCBO≥900V)
    ・Fast switching speed
    ・Wide ASO（Safe Operating Area）

    APPLICATIONS
    ・800V/1.5A Switching Regulator Applications

    PINNING

    PIN DESCRIPTION

    1 Base

    Collector;connected to
    2
    mounting base
    Fig.1 simplified outline (TO-3PN) and symbol
    3 Emitter

    Absolute maximum ratings (Ta=25℃)


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 900 V

    VCEO Collector-emitter voltage Open base 800 V

    VEBO Emitter-base voltage Open collector 7 V

    IC Collector current 1.5 A

    ICM Collector current-peak 5 A

    IB Base current 0.8 A

    PC Collector power dissipation TC=25℃ 60 W

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -55~150 ℃


    JMnic Product Specification

    Silicon NPN Power Transistors 2SC3151

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 800 V

    V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V

    V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V

    VCEsat Collector-emitter saturation voltage IC=0.75A ;IB=0.15A 2.0 V

    VBEsat Base-emitter saturation voltage IC=0.75A ;IB=0.15A 1.5 V

    ICBO Collector cut-off current VCB=800V; IE=0 10 μA

    IEBO Emitter cut-off current VEB=5V; IC=0 10 μA

    hFE-1 DC current gain IC=0.1A ; VCE=5V 10 40

    hFE -2 DC current gain IC=0.5A ; VCE=5V 8

    COB Output capacitance IE=0 ; VCB=10V;f=1MHz 30 pF

    fT Transition frequency IC=0.1A ; VCE=10V 15 MHz

    Switching times

    ton Turn-on time 1.0 μs

    IC=1A;IB1=0.2A;IB2=-0.4A
    ts Storage time 3.0 μs
    RL=400Ω,VCC=400V

    tf Fall time 0.7 μs

    ‹ hFE-1 classifications
    K L M

    10-20 15-30 20-40

    2
    JMnic Product Specification

    Silicon NPN Power Transistors 2SC3151

    PACKAGE OUTLINE

    Fig.2 outline dimensions

    3
    JMnic Product Specification

    Silicon NPN Power Transistors 2SC3151

    You might also like