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    2SB1132

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    Nelson
    This document provides specifications for the 2SB1132 PNP silicon medium power transistor. It includes key electrical characteristics such as a collector-base breakdown voltage of -40V, DC current gain range of 82-390, and transition frequency of 150MHz. The transistor comes in different hFE classifications and is available in the SOT-89 surface mount package. Absolute maximum ratings and test conditions are also provided.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2SB1132

    Uploaded by

    Nelson
    43 views2 pages
    This document provides specifications for the 2SB1132 PNP silicon medium power transistor. It includes key electrical characteristics such as a collector-base breakdown voltage of -40V, DC current gain range of 82-390, and transition frequency of 150MHz. The transistor comes in different hFE classifications and is available in the SOT-89 surface mount package. Absolute maximum ratings and test conditions are also provided.

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    Fuente astron

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    This document provides specifications for the 2SB1132 PNP silicon medium power transistor. It includes key electrical characteristics such as a collector-base breakdown voltage of -40V, DC current gain range of 82-390, and transition frequency of 150MHz. The transistor comes in different hFE classifications and is available in the SOT-89 surface mount package. Absolute maximum ratings and test conditions are also provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    43 views2 pages

    2SB1132

    Uploaded by

    Nelson
    This document provides specifications for the 2SB1132 PNP silicon medium power transistor. It includes key electrical characteristics such as a collector-base breakdown voltage of -40V, DC current gain range of 82-390, and transition frequency of 150MHz. The transistor comes in different hFE classifications and is available in the SOT-89 surface mount package. Absolute maximum ratings and test conditions are also provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2SB1132

    -1A, -40V
    Elektronische Bauelemente PNP Silicon Medium Power Transistor

    RoHS Compliant Product


    A suffix of “-C” specifies halogen & lead-free

    FEATURES SOT-89
     Low power dissipation 0.5W
    4

    CLASSIFICATION OF hFE 1 2
    3
    Product Rank 2SB1132-P 2SB1132-Q 2SB1132-R A
    E C
    Range 82~180 120~270 180~390

    Marking BAP BAQ BAR


    B D

    PACKAGE INFORMATION F G
    H K
    Package MPQ Leader Size Collector
     J L
    SOT-89 1K 7’ inch Millimeter Millimeter
    REF. REF.
    Min. Max. Min. Max.
     A 4.40 4.60 G 0.40 0.58
    B 3.94 4.25 H 1.50 TYP
    Base C 1.40 1.60 J 3.00 TYP
    D 2.30 2.60 K 0.32 0.52
     E 1.50 1.70 L 0.35 0.44
    Emitter F 0.89 1.2

    ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)


    Parameter Symbol Ratings Unit
    Collector-Base Voltage VCBO -40 V
    Collector-Emitter Voltage VCEO -32 V
    Emitter-Base Voltage VEBO -5 V
    Collector Current (DC) IC -1 A
    Collector Power Dissipation PC 500 mW
    Junction & Storage Temperature TJ, TSTG 150, -55~150 °C

    ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)


    Parameter Symbol Min. Typ. Max. Unit Test Conditions
    Collector-base breakdown voltage V(BR)CBO -40 - - V IC= -50μA, IE=0
    Collector-emitter breakdown voltage V(BR)CEO -32 - - V IC= -1mA, IB=0
    Emitter-base breakdown voltage V(BR)EBO -5 - - V IE= -50μA, IC=0
    Collector cut-off current ICBO - - -0.5 μA VCB= -20V, IE=0
    Emitter cut-off current IEBO - - -0.5 μA VEB= -4V, IC=0
    DC current gain hFE 82 - 390 VCE= -3V, IC= -100mA
    Collector-emitter saturation voltage VCE(sat) - -0.2 -0.5 V IC= -500mA, IB= -50mA
    VCE= -5V, IC= -50mA,
    Transition frequency fT - 150 - MHz
    f=30MHz
    Collector output capacitance Cob - 20 30 pF VCB= -10V, IE=0, f=1MHz

    http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

    02-Nov-2012 Rev. C Page 1 of 2


    2SB1132
    -1A, -40V
    Elektronische Bauelemente PNP Silicon Medium Power Transistor

    CHARACTERISTIC CURVES

    http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

    02-Oct-2012 Rev. C Page 2 of 2

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